Improvement of photoemission performance of a gradient-doping transmission-mode GaAs photocathode

Two types of transmission-mode GaAs photocathodes grown by molecular beam epitaxy are compared in terms of activation process and spectral response, one has a gradient-doping structure and the other has a uniform-doping structure. The experimental results show that the gradient-doping photocathode can obtain a higher photoemission capability than the uniform-doping one. As a result of the downward graded band-bending structure, the cathode performance parameters, such as the electron average diffusion length and the surface electron escape probability obtained by fitting quantum yield curves, are greater for the gradient-doping photocathode. The electron diffusion length is within a range of from 2.0 to 5.4μm for doping concentration varying from 10^19 to 10^18 cm^-3 and the electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm.

Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy

The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420μA/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy （MBE） growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1×10^19 cm-3 to 1×1018 cm-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition,by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaA1As causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.

Comparison of blue–green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy

In order to develop the photodetector for effective blue-green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Alo.7Gao.3Aso.9Po.1/GaAso.9Po.1 photocathode grown by molecular beam epitaxy is tentatively fabricated. A comparison of photoelectric property, spectral characteristic and performance parameter be- tween the transmission-mode GaAsP-based and blue-extended GaAs-based photocathodes shows that the GaAsP-based photocathode possesses better absorption and higher quantum efficiency in the blue-green waveband, combined with a larger surface electron escape probability. Especially, the quantum efficiency at 532 nm for the GaAsP-based photocathode achieves as high as 59%, nearly twice that for the blue-extended GaAs-based one, which would be more conducive to the underwater range-gated imaging based on laser illumination. Moreover, the simulation results show that the favorable blue-green response can be achieved by optimizing the emission-layer thickness in a range of 0.4 μm-0.6 μm.

Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode

The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers, this paper calculates the trajectories of photoelectrons in a photocathode. Thus the distribution of photoelectron spots on the emit-face is obtained, which is namely the point spread function. The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function. The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length, and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration. Furthermore, the resolution is enhanced considerably by increasing the active-layer thickness, especially at high spatial frequencies. The best spatial resolution is 860 lp/mm, for the GaAs photocathode of doping concentration 1 ×10^19 cm 3 electron diffusion length 3.6 μm and the active-layer thickness 2 μm, under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode＇s resolution for preparing a high performance GaAs photocathode, and improve the resolution of a low light level image intensifier.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage （SPV） curve before activation and the spectral response curve （SRC） after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability （SEP） can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

A transmission-mode GaAs photocathode includes four layers of glass, Si3N4, Gal-xAlxAs and GaAs. A gradientdoping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spectrophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition, a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error, meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 73. The presence of glass layer roughness, layer interface effects and surface oxides is interpreted on the modification.

The optimal thickness of a transmission-mode GaN photocathode

A 150-nm-thick CaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber, and a quantum efficiency （QE） curve of the negative electron affinity transmission-mode （t-mode） of the GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5 ×104 cm. s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of CaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes

By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.

High performance n^+p-Si/Ti/NiS_xO_y photocathode for photoelectrochemical hydrogen evolution in alkaline solution

Silicon, as a promising semiconductor for fabricating photocathode toward photoelectrochemical hydrogen evolution reaction(PEC-HER), should be improved in light harvesting ability and catalytic kinetics to obtain high PEC performance. Herein, a novel amorphous Nickel Oxysulfide(NiS_xO_y) film is effectively integrated with a Ti protected n^+p-Si micropyramid photocathode by the electrodeposition method. The fabricated n^+p-Si/Ti/Ni SxOyphotocathode exhibits excellent PEC-HER performance with an onset potential of 0.5 V(at J =-0.1 mA/cm^2), a photocurrent density of-26 mA/cm^2 at 0 V vs. RHE, and long term stability of six hours in alkaline solution(pH ≈ 14). The synergy of unique n^+p-Si micropyramid architectures(omnidirectional broadband light harvesting ability), novel amorphous NiS_xO_y catalyst(high HER electrocatalytic activity and good optical transparency) results in the high performance of n^+pSi/Ti/Ni S_xO_y. This work offers a novel strategy for effectively integrating electrocatalysts with semiconductor to design efficient photoelectrode toward PEC water splitting.

Temporal Characteristics of GaAs NEA and Alkali Metal Photocathodes

The temporal characteristics of GaAs NEA and alkali metal photocathodes are studied using Monte Carlo simulation method. The electron transit time and its distribution functions in the photocathodes are calculated. Based on the results, the time modulation transfer functions and temporal resolutions of the photocathodes are obtained. The results show that the response time and temporal resolution of alkali metal photocathode is in femitosecond order and those of GaAs NEA photocathode are in picosecond order.

Influence of varied doping structure on photoemissive property of photocathode

The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface, thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement, which might be due to the increase in either the number or the energy of electrons reaching the surface, is not clear at present. In this paper, the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed, and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.

A theoretical and experimental evaluation of Ⅲ–nitride solar-blind UV photocathode

We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

Development of Preparation Systems with K_2CsSb Photocathodes and Study on the Preparation Process

The next generation of advanced light sources requires photons with large average flux and high brightness,which needs advanced electron gun matched with excellent photocathode materials. K_2CsSb photocathode has the advantages of high quantum efficiency, long lifetime and instantaneous response. This study introduces the design of a set of K_2CsSb photocathode preparation systems and detailed preparation process of K_2CsSb photocathodes, including sequential deposition process and co-deposition process, and finally develops a K_2CsSb photocathode. The influence of laser power on the quantum efficiency is also investigated.

Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes

In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.

Efficient photoelectrochemical conversion of CO_(2)to syngas by photocathode engineering

The synthesis of renewable chemical fuels from CO_(2) and H_(2)O via photoelectrochemical(PEC)route reprensents a promising room-temperature approach for transforming greenhouse gas into value-added chemicals(e.g.,syngas),but to date it has been hampered by the lack of efficient photocathode for CO_(2) reduction.Herein,we report efficient PEC CO_(2) reduction into syngas by photocathode engineering.The photocathode is consisting of a planar p-n Si junction for strong light harvesting,GaN nanowires for efficient electron extraction and transfer,and Au/TiO_(2)for rapid electrocatalytic syngas production.The photocathode yields a record-high solar energy conversion efficiency of 2.3%.Furthermore,desirable syngas compositions with CO/H_(2)ratios such as 1:2 and 1:1 can be produced by simply varying the size of Au nanoparticle.Theoretical calculations reveal that the active sites for CO and H_(2)generation are the facet and undercoordinated sites of Au particles,respectively.

Recent progress and perspectives on Sb_(2)Se_(3)-based photocathodes for solar hydrogen production via photoelectrochemical water splitting

Photoelectrochemical(PEC) cells involved with semiconductor electrodes can simultaneously absorb solar energy and perform chemical reactions, which are considered as an attractive strategy to produce renewable and clean hydrogen energy. Sb_(2)Se_(3) has been widely investigated in constructing PEC photocathodes benefitting of its low toxicity, suitable band gap, superior optoelectronic properties, and outstanding photocorrosion stability. We first present a brief overview of basic concepts and principles of PEC water splitting as well as a comparison between Sb_(2)Se_(3) and other numerous candidates. Then the material characteristics and preparation methods of Sb_(2)Se_(3) are introduced. The development of Sb_(2)Se_(3)-based photocathodes in PEC water splitting with various architectures and engineering efforts(i.e., absorber engineering, interfaces engineering, co-catalyst engineering and tandem engineering) to improve solar-to-hydrogen(STH) efficiency are highlighted. Finally, we debate the possible future directions to further explore the researching fields of Sb_(2)Se_(3)-based photocathodes with a strongly positive outlook in PEC processed solar hydrogen production.

Stabilizing CuO photocathode with a Cu_(3)N protection shell

CuO,as a promising photocathode material,suffers from severe photocorrosion in photoelectrochemical water splitting applications.Herein,a Cu_(3)N protection shell was used to protect the CuO photocathode for the first time to effectively suppress the photocorrosion of CuO.Consequently,the Cu_(3)N‐protected CuO photocathode shows improved stability,retaining 80% of its initial current density in a 20‐min test,while only 10%of the initial current density can be retained for the bare photocathode.This work may provide an important strategy for using Cu_(3)N shells to stabilize unstable photocathodes.

Constructions and Preliminary HV Conditioning of a Photocathode Direct-Current Electron Gun at IHEP

As one of the most important key technologies for future advanced light source based on the energy recovery linac, a photocathode dc electron gun is supported by Institute of High Energy Physics （IHEP） to address the technical challenges of producing very low ernittance beams at high average current. Construction of the dc gun is completed and a preliminary high voltage conditioning is carried out up to 440 k V. The design, construction and preliminary HV conditioning results for the dc gun are described.

RESEARCH ON OPTICAL METHOD OF MONITORING PHOTOCATHODE PROCESS

The principle of an optical method of photocathode processing control, which is one ofphotocathode processing monitoring techniques, is discussed. A designed monitoring apparatus is describedand has been applied to investigate the optical parameters of multialkali photoemitter during the process offabrication. Some actual schemes using the method to monitor the preparation of photocathodεs are sug-gested.