For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular be...For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.展开更多
Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In...Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.展开更多
This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LI...This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.展开更多
To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabr...To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.展开更多
Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal an...Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing.The effects of F-doping content on the structural,morphological,electrical,and optical properties of FCGZO films were examined by XRD,TEM,FE-SEM,PL spectroscopy,XPS,Hall effects testing,and UVeviseNIR spectroscopy.All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate.Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film.At a doping ratio of 2%(in mole),the F,Cl,and Ga co-doped ZnO film exhibited the best photoelectric performance,with a carrier concentration of 2.62×10^(20)cm^(-3),mobility of 14.56 cm^(2)/(V·s),and resistivity of 1.64×10^(-3)Ucm.The average transmittance(AT)in the 380-1600 nm region nearly 90%with air as the reference,and the optical band gap was 3.52 eV.展开更多
本文介绍了ITO(Indium Tin Oxide)透明导电膜的制备工艺,对影响其光学和电学特性的因素作了分析。并讨论了透明导电的机理,在K9玻璃上制备的ITO透明导电膜,在500～600nm波长范围内,典型的峰值透过率为90％,面电阻为40～50Ω/□。用该技...本文介绍了ITO(Indium Tin Oxide)透明导电膜的制备工艺,对影响其光学和电学特性的因素作了分析。并讨论了透明导电的机理,在K9玻璃上制备的ITO透明导电膜,在500～600nm波长范围内,典型的峰值透过率为90％,面电阻为40～50Ω/□。用该技术制备的样品作为透明电极,在液晶光阀空间光调制器中得到了应用。展开更多
基金Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province,China (Grant No.GDKTP2021015200)。
文摘For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.
基金National Natural Science Foundation of China (50471004)
文摘Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.
基金We are grateful for financial supports from the Ministry of Science and Technology of China(Grant No.2021YFA1401100)National Natural Science Foundation of China(Grant Nos.12074123,11804227,91950112),and the Foundation of‘Manufacturing beyond limits’of Shanghai.
文摘This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.
文摘To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.
基金the Key Research and Development Projects of Hebei Province(Grant No.19214301D)the Key Project of Science and Technology Research in Higher Education Institutions of Hebei Province(Grant No.ZD2022024)+3 种基金the Natural Science Foundation of Hebei Province(Grant Nos A2019405059,A2022405002)the Starting Fund for Independent Doctoral Research of Hebei Agricultural University(PY2021005)the General Projects of Hebei North University(Grant No.XJ2021001)the Innovation and Entrepreneurship Training Program for College Students of Hebei North University(Grant Nos 202210092007,S202210092006).
文摘Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing.The effects of F-doping content on the structural,morphological,electrical,and optical properties of FCGZO films were examined by XRD,TEM,FE-SEM,PL spectroscopy,XPS,Hall effects testing,and UVeviseNIR spectroscopy.All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate.Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film.At a doping ratio of 2%(in mole),the F,Cl,and Ga co-doped ZnO film exhibited the best photoelectric performance,with a carrier concentration of 2.62×10^(20)cm^(-3),mobility of 14.56 cm^(2)/(V·s),and resistivity of 1.64×10^(-3)Ucm.The average transmittance(AT)in the 380-1600 nm region nearly 90%with air as the reference,and the optical band gap was 3.52 eV.
文摘本文介绍了ITO(Indium Tin Oxide)透明导电膜的制备工艺,对影响其光学和电学特性的因素作了分析。并讨论了透明导电的机理,在K9玻璃上制备的ITO透明导电膜,在500～600nm波长范围内,典型的峰值透过率为90％,面电阻为40～50Ω/□。用该技术制备的样品作为透明电极,在液晶光阀空间光调制器中得到了应用。
