Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films

Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated

Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.

Preparation of ZAO film by low-temperature hydrothermal approach and its electrical property

Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.

Preparation and Spectroscopic Properties of Pr^(3＋)-doped Transparent Glass-ceramic Containing LiYF_4 Nanocrystals

Pr^（3＋）-doped transparent oxyfluoride glass-ceramic containing tetragonal LiYF_4 nanocrystals has been synthesized by melting-quenching method and subsequent thermal treatment and spectroscopic properties of Pr^（3＋） ions were investigated. The crystalline phase and microstructure of the LiYF_4 nanocrystals were studied by X-ray diffraction（XRD） and transmission electron microscopy（TEM）, respectively. Compared with those of Pr^（3＋）-doped glass（Pr^（3＋）：PG）, the sharp absorption and emission bands of Pr^（3＋）-doped glass-ceramic（Pr^（3＋）：GC） reveal parts of Pr^（3＋） ions are incorporated into LiYF_4 nanocrystals. The peak absorption cross-section at 443 nm（~3H_4 → ~3P_2） adds to 110% and the full width at half maximum（FWHM） for the band around 443 nm reduces from 22 to 14 nm after crystallization. The fluorescence lifetime of the ~3P_0 multiplet of Pr^（3＋） ions increases from 5.35 to 11.14 μs after crystallization. The results indicate that this glass-ceramic is promising to be a visible laser material.

Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.

Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.

Laser Properties of Nd_2O_3 Doped Na_2O–CaO–SiO_2 Transparent Glass-Ceramics for Space Solar Energy

A series of Na20-CaO-SiO2 glass ceramics containing different content of Nd3＋ ions were prepared by the method of high temperature melting and subsequent crystallization. The absorption, excitation and emis- sion spectra of these glass ceramics were investigated; effects of Nd3＋ content and crystallization behavior on the laser properties of this material had been studied. The results show that the emission bands origi- nating from the 4F3/2 state of Nd3＋ were firstly enhanced with the increase of the Nd2O3 doping content and the crystallinity degree, and then decreased with more doping content and deepened crystalliza- tion. The possible reasons of this phenomenon were analyzed. Research will be favored to promote the development of glass ceramics laser materials for space solar energy.

Transparent h-BN/polyacrylamide nanocomposite hydrogels with enhanced mechanical properties

In this study, a facile way has been proposed to prepare transparent, tough and flexible polyacrylamide （PAM） hydrogels which is composed of a dually crosslinked single network by chemical crosslinking of N,N＇-methylenebisacrylamide （BIS） and physical crosslinking of hydrophilic hexagonal boron nitride （h- BN） nanosheets. The resulting h-BN/PAM nanocomposite hydrogels are highly transparent, and exhibit significantly enhanced mechanical properties compared to the dark （GO）/PAM nanocomposite hydrogels or chemical crosslinking PAM hydrogels. Thus it opens up new opportunities for developing next- generation transparent, tough and flexible hydrogels that hold great promise in such important applications as light responsive soft robot and liquid microlenses.

Fabrication and properties of tape-casting transparent Ho:Y_3Al_5O_(12) ceramic

High-quality holmium-doped Y3Al5O12 （YAG） ceramic is fabricated in sequence by tape-casting and vacumn sintering. Tile average grain size of the Ho：YAG ceramic is around 20μm with a flllly dense microstructure. The inlinc transmittance of the sample is -82% in visible and IR region. The fluorescence lift, time at 2088 mn is 8.17 ms. The excellent properties of the Ho：YAG ceramic demonstrate the tape-casting is a novel candidate process for the fabrication of Ho：YAG-based thin-chip or composite ceramics.

Structure and optoelectrical properties of transparent conductive MGZO films deposited by magnetron sputtering

The transparent conductive Mg-Ga co-doped Zn O(MGZO) films were prepared by radio-frequency(RF) magnetron sputtering. The influence of substrate temperature on the structural and optoelectrical properties of the films is studied. The results show that all the films possess a preferential orientation along the(002) plane. With the increase of substrate temperature, the structure and optoelectrical properties of the films can be changed. When substrate temperature is 300 ℃, the deposited film exhibits the best crystalline quality and optoelectrical properties, with the minimum micro strain of 1.09×10^(-3), the highest average visible transmittance of 82.42%, the lowest resistivity of 1.62×10^(-3) Ω·cm and the highest figure of merit of 3.18×10~3 Ω^(-1)·cm^(-1). The optical bandgaps of the films are observed to be in the range of 3.342—3.545 eV. The refractive index dispersion curves obey the Sellmeier's dispersion model.

High-precision method for measuring the photothermal properties of transparent media with digital holography

Quantitative phase microscopy by digital holography provides direct access to the phase profile of a transparent subject with high precision. This is useful for observing phenomena that modulate phase, but are otherwise difficult or impossible to detect. In this letter, a carefully constructed digital holographic apparatus is used to measure optically induced thermal lensing with an optical path difference precision of less than 1 nm. Furthermore, by taking advantage of the radial symmetry of a thermal lens, such data are processed to determine the absorption coefficient of transparent media with precisions as low as 1 × 10-5cm-1 using low power （30 mW） continuous wave （CW） excitation.