Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.

Fabrication and optical properties of a highly transparent Nd:YAG ceramic

A neodymium doped yttrium aluminum gamet （Nd：YAG） transparent ceramic was fabricated by a solid state reaction method using commercial α-Al2O3, Y2O3, and Nd2O3 powders as starting materials and tetraethyl orthosilicate （TEOS） as sintefing aid. The morphology and microstructure of the nanopowders and the Nd：YAG transparent ceramic were investigated. The fully dense Nd：YAG ceramic with an average grain size of-20 μm was obtained by vacuum sintering at 1720℃ for 12 h. Few pores and grain-boundary phases were observed. The in-line transmittance of the ceramic was 81.5% at 1064 nm.

Fabrication,microstructure,and optical properties of nanocrystalline transparent LAST glass ceramics containing CeO_2

In the present research, the effect of CeO2 dopant on the fabrication of transparent lithium aluminosilicate titanate （LAST） glass ceramics was investigated. Nanocrystallineβ-quartz solid solution （s.s.） was observed to be the main phase crystallized in this system. Com-parable refractive indices of the glassy matrix andβ-quartz s.s., as well as the incorporation of very fine grains size were determined as the main reasons for retaining the transparency of the glass ceramics. CeO2 was introduced as a suitable optical agent, playing a role as a network modifier in the glass ceramics, because it does not accelerate the growth process and retards the extended growth of crystals. Optical investi-gations indicate that the Fermi energy level, direct and indirect band gaps, and Urbach energy decrease with increasing nanocrystal content in the glassy matrix of specimens, which can be related to the expansion of conduction band, the enhancement of ionic bonds in the crystal lat-tice, and the enhancement of structural arrangement degree, respectively.

Spectral and laser properties of Yb and Ho co-doped(YLa)_2O_3 transparent ceramic

Highly transparent Yb,Ho doped（YLa）2O3 ceramic was fabricated by conventional ceramic processing with nanopowders.The absorption and emission spectra of the ceramic was investigated.The energy transfer mechanism between Yb3＋ and Ho3＋ was also discussed.The strong emission band around 2 μm indicated that the Yb-Ho：（Y 0.90 La 0.10）2O3 transparent ceramic is a promising gain medium for the generation of 2 μm laser emissions.The laser operation of Yb-Ho co-doped（YLa）2O3 ceramic at 2.1 μm is first reported.

Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films

Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated

Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.

Preparation and Spectroscopic Properties of Pr^(3＋)-doped Transparent Glass-ceramic Containing LiYF_4 Nanocrystals

Pr^（3＋）-doped transparent oxyfluoride glass-ceramic containing tetragonal LiYF_4 nanocrystals has been synthesized by melting-quenching method and subsequent thermal treatment and spectroscopic properties of Pr^（3＋） ions were investigated. The crystalline phase and microstructure of the LiYF_4 nanocrystals were studied by X-ray diffraction（XRD） and transmission electron microscopy（TEM）, respectively. Compared with those of Pr^（3＋）-doped glass（Pr^（3＋）：PG）, the sharp absorption and emission bands of Pr^（3＋）-doped glass-ceramic（Pr^（3＋）：GC） reveal parts of Pr^（3＋） ions are incorporated into LiYF_4 nanocrystals. The peak absorption cross-section at 443 nm（~3H_4 → ~3P_2） adds to 110% and the full width at half maximum（FWHM） for the band around 443 nm reduces from 22 to 14 nm after crystallization. The fluorescence lifetime of the ~3P_0 multiplet of Pr^（3＋） ions increases from 5.35 to 11.14 μs after crystallization. The results indicate that this glass-ceramic is promising to be a visible laser material.

Fabrication, Structure and Optical Properties of Zr4+ Doped Ba（Mg, Ta） O3 Transparent Ceramics with High Refractive Index

Novel transparent ceramics of Zr4+ doped Ba(Mg,Ta)O3(BMT)with a high refractive index of 2.037 at 587.56 nm were successfully fabricated via high temperature solid-state-reaction sintering method.To make it transparent,the pure cubic Ba(Zr,Mg,Ta)O3 phases(BZMT)were realized in advance by skillfully modulating the lattice structure of BMT from trigonal symmetric to cubic symmetric through doping Zr4+ into the lattice of BMT crystal.Highly optical transmittance of 74% at 650 n,,which hit the upper limit of the theory,was achieved for BZMT.Both abbe number of 23.4 and the bandgap Eg of 3.22 eV have been calculated.

Spectral properties of Ce^(3+) doped yttrium lanthanum oxide transparent ceramics

Ce3＋-doped yttrium lanthanum oxide （Y0.9La0.1）2O3 transparent ceramics is fabricated with nanopowders and sintered in H2 atmosphere. The spectral properties of Ce：（Y0.9La0.1）2O3 transparent ceramics are investigated. There appear two characteristic absorption peaks of Ce3＋ ions at 230~nm and 400~nm, separately. It is found that Ce3＋ ions can efficiently produce emission at 384~nm from （Y0.9La0.1）2O3 transparent ceramic host, while the emission is completely quenched in Re2O3 （Re=Y, Lu, La） host materials.

Dependence of Thermal Annealing on Transparent Conducting Properties of HoF_3-Doped ZnO Thin Films

A kind of n-type HoF_3-doped zinc oxide-based transparent conductive film has been developed by electron beam evaporation and studied under thermal annealing in air and vacuum at temperatures 100–500℃.Effective substitutional dopings of F to O and Ho to Zn are realized for the films with smooth surface morphology and average grain size of about 50 nm.The hall mobility,electron concentration,resistivity and work function for the asdeposited films are 47.89 cm^2/Vs,1.39×10^(20)cm^(-3),9.37×10^(-4)Ω·cm and 5.069 eV,respectively.In addition,the average transmittance in the visible region(400–700 nm)approximates to 87%.The HoF_3:ZnO films annealed in air and vacuum can retain good optoelectronic properties under 300℃,thereinto,more stable electrical properties can be found in the air-annealed films than in the vacuum-annealed films,which is assumed to be a result of improved nano-crystalline lattice quality.The optimized films for most parameters can be obtained at 200℃ for the air-annealing case and at room temperature for the vacuum annealing case.The advisable optoelectronic properties imply that HoF_3:ZnO can facilitate carrier injection and has promising applications in energy and light sources as transparent electrodes.

Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.

Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.

Effect of Additive on Microstructure of Transparent YAG Ceramics

Transparent YAG (yttrium aluminum garnet) ceramics were fabricated by solid-state reaction method. Effect of additive (tetraethyl orthosilicate, TEOS) on microstructure of YAG ceramics was investigated. If the addition of TEOS is more than 3% (mass fraction), large amount of liquid phase can be yielded at grain boundaries, resulting in the formation of second phase particles at grain boundaries. If the addition is less than 0.05% (mass fraction), pores are entrapped in the grains. The suitable amount is 0.5% (mass fraction). A fully transparent YAG ceramic was fabricated by vacuum sintering at 1700 ℃ for 5 h. Optical transmittance of the YAG ceramic is 63% in the visible light wavelengths and 70% in the infrared wavelengths.

Synthesis and Performance of Transparent Casting Polyurethane Resin

A series of transparent casting polyurethane resins (TCPU) were synthesized from cycloaliphatic diisocyanate (IPDI or H_(12)MDI), polyol, chain extender, crosslinking agents, catalyst and special aids (T),which were characterized by FTIR. The thermal stabilities of the obtained TCPU were examined by DSC and TGA, the glass transition temperature (T_g) was in the range of 95-110 ℃, the initial decomposition temperature (5% weight loss) was 250-265 ℃, and 10% weight loss at the temperature was in the range of 260-286℃ in nitrogen atmosphere. The morphologies of the fractured surfaces of TCPU were revealed by a scanning electron microscope (SEM). The crystalline-amorphous characters of TCPU were studied by WAXD, the result shows that TCPU possesses amorphous glassy characters. The optical properties of TCPU were studied by a UV-7500 visible light absorbance measurement. All the samples exhibited excellent optical properties and possessed light transmittance in the range of 91%-93%.

Comparative spectroscopic investigation of Yb-doped YAG,YSAG and YLaO_3 transparent ceramics

Transparent Yb doped YAG, YSAG and YaLaO3 ceramics are fabricated by using the co-precipitation method. The spectral properties and thermal parameters of these Yb doped cubic phase transparent ceramics are compared, and their different and potential applications are also analysed. The absorption cross-section and the emission cross-section of these ceramics are measured and calculated. The essential properties of these materials especially for the rep-rated pulsed high-energy diode-pumped solid-state lasers are investigated. The results show that Yb doped YAG, YSAG and YaLaO3 are all suitable materials used for diode-pumped solid-state lasers.

Spectroscopic characterization of Yb:Sc_2O_3 transparent ceramics

Yb：Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth （11 nm） and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb：Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb：Sc2O3 transparent ceramics are a promising material for short pulse lasers.

Study on Acoustically Transparent Test Section of Aeroacoustic Wind Tunnel

On the purpose of accurate data acquisition for the aeroacoustic testing mostly in open jet test section of aeroacoustic wind tunnel, the large scale anechoic chamber is specifically designed to build the low background noise environment. A newly acoustic test section is presented in this paper, of which the contour is similar as the closed test section, and the wall is fabricated by the fiber fabric, both the characteristics of closed and open jet test section of conventional wind tunnel are combined in it. By thoroughly researching on the acoustics and aerodynamics of this acoustically transparent test section, significant progress in reducing the background noises in test section and improving the ratio of energy of the wind tunnel and some other aspects have been achieved. Acoustically transparent test section behaves better in acoustics and aerodynamics than conventional acoustic test section because of their high definition in detecting the sound sources and great performance in transmitting sounds.

Transverse Optical Properties of the Eu3+:Y2SiO5 Crystal in Electromagnetically Induced Transparency

According to density matrix equations of the interaction between light and matter, the expression for the suscep- tibility of the Eu^3＋ ：Y2SiO5 crystal is obtained. When the control field is a Gaussian beam, we investigate and analyze the influence of probe detuning, the Rabi frequency of the control field and the laser line width on the transverse optical properties. We also analyze the influence of the dope-ion concentration on electromagnetieally induced transparency （EIT）. The analysis result indicates that the transmission is not a monotonic function of the dope-ion concentration. Based on the influences of various parameters on the transverse optical properties, we choose the appropriate parameters to realize the desired EIT and gradient refractive index, which has applications in focusing and imaging.