A Monte Carlo simulation method with an instantaneous density dependent meanfree-path of the ablated particles and the Ar gas is developed for investigating the transport dynamics of the laser-ablated particles in a l...A Monte Carlo simulation method with an instantaneous density dependent meanfree-path of the ablated particles and the Ar gas is developed for investigating the transport dynamics of the laser-ablated particles in a low pressure inert gas.The ablated-particle density and velocity distributions are analyzed.The force distributions acting on the ablated particles are investigated.The influence of the substrate on the ablated-particle velocity distribution and the force distribution acting on the ablated particles are discussed.The Monte Carlo simulation results approximately agree with the experimental data at the pressure of 8 Pa to 17 Pa.This is helpful to investigate the gas phase nucleation and growth mechanism of nanoparticles.展开更多
This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical e...This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical expression for the low-field mobility is proposed, which covers the entire regime from drift-diffusion transport to quasi-ballistic transport in 1-D, 2-D and 3-D MOSFETs. Two key parameters, namely the long-channel low-field mobility （λ0） and the low-field mean free path （λ0）, are obtained from the experimental data, and the transport mechanism transition in MOSFETs is further discussed both experimentally and theoretically. Our work shows that λ0 is available to characterize the inherent transition of the carrier transport mechanism rather than the low-field mobility. The mobility reduces in the MOSFET with the shrinking of the channel length; however, λ0 is nearly a constant, and λ0 can be used as the ＂entry criterion＂ to determine whether the device begins to operate under quasi-ballistic transport to some extent.展开更多
We present an extensive study of the electronic properties and carrier transport in phosphorene nanoribbons （PNRs） with edge defects by using rigorous atomistic quantum transport simulations. This study reports on t...We present an extensive study of the electronic properties and carrier transport in phosphorene nanoribbons （PNRs） with edge defects by using rigorous atomistic quantum transport simulations. This study reports on the size- and defect-dependent scaling laws governing the transport gap, and the mean free path and carrier mobility in the PNRs of interest for future nanoelectronics applications. Our results indicate that PNRs with armchair edges （aPNRs） are more immune to defects than zig-zag PNRs （zPNRs）, while both PNR types exhibit superior immunity to defects relative to graphene nanoribbons （GNRs）. An investigation of the mean free path demonstrated that even in the case of a low defect density the transport in PNRs is diffusive, and the carrier mobility remains a meaningful transport parameter even in ultra-small PNRs. We found that the electron-hole mobility asymmetry （present in large-area phosphorene） is retained only in zPNRs for W 〉 4 nrn, while in other cases the asymmetry is smoothed out by edge defect scattering. Furthermore, we showed that aPNRs outperform both zPNRs and GNRs in terms of carrier mobility, and that PNRs generally offer a superior mobility-bandgap trade-off, relative to GNRs and monolayer MoS2. This work identifies PNRs as a promising material for the extremely scaled transistor channels in future posbsilicon electronic technology, and presents a persuasive argument for experimental work on nanostructured phosphorene.展开更多
High-resolution optical imaging through or within thick scattering media is a long sought after yet unreached goal.In the past decade,the thriving technique developments in wavefront measurement and manipulation do no...High-resolution optical imaging through or within thick scattering media is a long sought after yet unreached goal.In the past decade,the thriving technique developments in wavefront measurement and manipulation do not significantly push the boundary forward.The optical diffusion limit is still a ceiling.In this work,we propose that a scattering medium can be conceptualized as an assembly of randomly packed pinhole cameras and the corresponding speckle pattern as a superposition of randomly shifted pinhole images.The concept is demonstrated through both simulation and experiments,confirming the new perspective to interpret the mechanism of information transmission through scattering media under incoherent illumination.We also analyze the efficiency of single-pinhole and dual-pinhole channels.While in infancy,the proposed method reveals a new perspective to understand imaging and information transmission through scattering media.展开更多
基金supported by the Natural Science Foundation of Hebei Province,China(No.A2015201166)the Natural Science Foundation of Hebei University,China(No.2013-252)
文摘A Monte Carlo simulation method with an instantaneous density dependent meanfree-path of the ablated particles and the Ar gas is developed for investigating the transport dynamics of the laser-ablated particles in a low pressure inert gas.The ablated-particle density and velocity distributions are analyzed.The force distributions acting on the ablated particles are investigated.The influence of the substrate on the ablated-particle velocity distribution and the force distribution acting on the ablated particles are discussed.The Monte Carlo simulation results approximately agree with the experimental data at the pressure of 8 Pa to 17 Pa.This is helpful to investigate the gas phase nucleation and growth mechanism of nanoparticles.
文摘This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical expression for the low-field mobility is proposed, which covers the entire regime from drift-diffusion transport to quasi-ballistic transport in 1-D, 2-D and 3-D MOSFETs. Two key parameters, namely the long-channel low-field mobility （λ0） and the low-field mean free path （λ0）, are obtained from the experimental data, and the transport mechanism transition in MOSFETs is further discussed both experimentally and theoretically. Our work shows that λ0 is available to characterize the inherent transition of the carrier transport mechanism rather than the low-field mobility. The mobility reduces in the MOSFET with the shrinking of the channel length; however, λ0 is nearly a constant, and λ0 can be used as the ＂entry criterion＂ to determine whether the device begins to operate under quasi-ballistic transport to some extent.
文摘We present an extensive study of the electronic properties and carrier transport in phosphorene nanoribbons （PNRs） with edge defects by using rigorous atomistic quantum transport simulations. This study reports on the size- and defect-dependent scaling laws governing the transport gap, and the mean free path and carrier mobility in the PNRs of interest for future nanoelectronics applications. Our results indicate that PNRs with armchair edges （aPNRs） are more immune to defects than zig-zag PNRs （zPNRs）, while both PNR types exhibit superior immunity to defects relative to graphene nanoribbons （GNRs）. An investigation of the mean free path demonstrated that even in the case of a low defect density the transport in PNRs is diffusive, and the carrier mobility remains a meaningful transport parameter even in ultra-small PNRs. We found that the electron-hole mobility asymmetry （present in large-area phosphorene） is retained only in zPNRs for W 〉 4 nrn, while in other cases the asymmetry is smoothed out by edge defect scattering. Furthermore, we showed that aPNRs outperform both zPNRs and GNRs in terms of carrier mobility, and that PNRs generally offer a superior mobility-bandgap trade-off, relative to GNRs and monolayer MoS2. This work identifies PNRs as a promising material for the extremely scaled transistor channels in future posbsilicon electronic technology, and presents a persuasive argument for experimental work on nanostructured phosphorene.
基金supported by the National Key Research and Development Program of China(Grant No.2016YFC0100602)National Natural Science Foundation of China(Grant Nos.81930048,81671726,and 81627805)+2 种基金Guangdong Science and Technology Commission(Grant Nos.2019BT02X105,and 2019A1515011374)Hong Kong Research Grant Council(Grant Nos.15217721,R5029-19,and C7074-21GF)Hong Kong Innovation and Technology Commission(Grant Nos.GHP/043/19SZ and GHP/044/19GD).
文摘High-resolution optical imaging through or within thick scattering media is a long sought after yet unreached goal.In the past decade,the thriving technique developments in wavefront measurement and manipulation do not significantly push the boundary forward.The optical diffusion limit is still a ceiling.In this work,we propose that a scattering medium can be conceptualized as an assembly of randomly packed pinhole cameras and the corresponding speckle pattern as a superposition of randomly shifted pinhole images.The concept is demonstrated through both simulation and experiments,confirming the new perspective to interpret the mechanism of information transmission through scattering media under incoherent illumination.We also analyze the efficiency of single-pinhole and dual-pinhole channels.While in infancy,the proposed method reveals a new perspective to understand imaging and information transmission through scattering media.
基金Supported by National Natural Science Foundation of China(11174161,10874093)National Basic Research Program of China(2010CB934101,2010CB93801)+1 种基金The 111 Project(B07013)Tianjin International Cooperation Program and Oversea Excellent Teacher Project(MS2010NKDX023)
