Text Sentiment Analysis Based on Multi-Layer Bi-Directional LSTM with a Trapezoidal Structure

Sentiment analysis,commonly called opinion mining or emotion artificial intelligence(AI),employs biometrics,computational linguistics,nat-ural language processing,and text analysis to systematically identify,extract,measure,and investigate affective states and subjective data.Sentiment analy-sis algorithms include emotion lexicon,traditional machine learning,and deep learning.In the text sentiment analysis algorithm based on a neural network,multi-layer Bi-directional long short-term memory(LSTM)is widely used,but the parameter amount of this model is too huge.Hence,this paper proposes a Bi-directional LSTM with a trapezoidal structure model.The design of the trapezoidal structure is derived from classic neural networks,such as LeNet-5 and AlexNet.These classic models have trapezoidal-like structures,and these structures have achieved success in the field of deep learning.There are two benefits to using the Bi-directional LSTM with a trapezoidal structure.One is that compared with the single-layer configuration,using the of the multi-layer structure can better extract the high-dimensional features of the text.Another is that using the trapezoidal structure can reduce the model’s parameters.This paper introduces the Bi-directional LSTM with a trapezoidal structure model in detail and uses Stanford sentiment treebank 2(STS-2)for experiments.It can be seen from the experimental results that the trapezoidal structure model and the normal structure model have similar performances.However,the trapezoidal structure model parameters are 35.75%less than the normal structure model.

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.

A Comparative Study of Dispersion Characteristics Determination of a Trapezoidally Corrugated Slow Wave Structure Using Different Techniques

The linear dispersion relation of a trapezoidally corrugated slow wave structure （TCSWS） is analyzed and presented. The size parameters of the TCSWS are chosen in such a way that they operate in the x-band frequency range. The dispersion relation is solved by utilizing the Rayleigh-Fourier method by expressing the radial function in terms of the Fourier series. A highly accurate synthetic technique is also applied to determine the complete dispersion characteristics from experimentally measured resonances （cold test）. Periodic structures resonate at specific frequencies when the terminals are shorted numerical calculation, synthetic technique and cold appropriately. The dispersion characteristics obtained from test are compared, and an excellent agreement is achieved.