Effects of trapped electrons on off-axis lower hybrid current drive in tokamaks

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.

Effects of Trapped Electrons on Off-axis Lower Hybrid Current Drive

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized.

Preference of Adult Bradysia odoriphaga Yang et Zhang to Different Colors and Trapping Effect of Yellow Sticky Trap

The trapping effects of yellow, blue, green, cyan and white sticky traps on adult Bradysia odoriphaga Yang et Zhang were studied in the field during its peak occurrence period. The results showed that yellow sticky trap received the best trapping effect on adult B. odoriphaga, follow by blue and green sticky traps, while cyan and white sticky traps received worse effects. The yellow sticky trap settled at south position was most attractive to adult B. odoriphaga, which had significant differences with tho^e placed at east and north positions （P 〈 0.05 ） ; the yellow sticky trap at hanging height of 0 cm showed significantly higher attractive- ness than those at heights of 20 and 40 cm.

Coherent population trapping magnetometer by differential detecting magneto–optic rotation effect

A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting magneto–optic rotation effect,a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained.The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order,and the ability to detect weak magnetic fields is extended one-fold.Therefore,the proposed scheme is suited to realize a pocket-size CPT magnetometer.

Spectroscopic Properties and Effect of Radiation Trapping of a New Er^(3+)/Yb^(3+) Co-Doped Tellurite-Silicate Glasses

A new serials of Er^3＋/Yb^3＋ co-doped tellurite-silicate glasses were prepared by the technique of high-temperature mehing. The thermal stability, absorption spectra, emission spectra and upconversion spectra were measured and investigated. It is found that these kinds of glasses have good thermal stability, broad FWHM and large stimulated emission cross-section. The three upconversion emission at 525, 546, 658 nm, corresponding to the ^2H11/2→^4Ⅰ15/2, ^4S3/2→4^Ⅰ15/2 and ^F9/2→^4Ⅰ15/2 transitions of Dr^3＋ ions,

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.

Trapping Effects of Different Treatments on Bactrocera dorsalis and Bactrocera cucurbitae

Five different trapping treatments, spraying attractant on bottle surface and spraying attractant inside the bottles with 0, 50,100 and 200 mL water, were set to trap Bactrocera dorsalis and B. cucurbitae in guava （Psidium guajava） park. The results showed that when the usage of attractant was 1 g, both Haonian and Wende had trapping effect on B. dorsalis and B. cucurbitae. The trapping effect of Haonian on B. dorsalis was better than that of Wende, while their trapping effects on B. cucurbitae was just the opposite. The trapping effects of different treatments had great difference. The trapping effect of Haonian on two species of fruit flies enhanced with the increasing volume of water, and reached the ma^mum value as the water volume was 200 mL. With the increasing volume of water, the trap- ping effect of Wende on two species of fruit flies first increased, and then decreased, which reached the maximum value as the water volume was 50 mL. Different treatments with attractants spraying inside bottles had better trapping effects on two species of fruit flies than that spraying on bottle surface.

Effects of Several Factors on Trapping Quantity of Grapholitha molesta Busck by Sex Pheromone

The key application technology for sex pheromone of Grapholitha molesta was studied from the aspects of different hanging heights and orientations, dif- ferent doses and types of traps through the tests on trapping quantity of G. molesta in fields. The results showed that the trapping effect was enhanced when the hanging height was increased, and the trapping effect was the best in west direction. The trapping effect was enhanced when the dosage was increased. When it was up to 6 lures, the trapping effect was the best with 38.75 head/trap; the next was 2 lures with 31.00 head/trap. All types of traps had trapping ability to G. mo- lesta, among which triangle trapper was the best, followed by self-made bottle trap. Their trapping effects were 138.75 and 100.25 head/trap, respectively.

Temperature-Dependent Effect of Near-Interface Traps on SiC MOS Capacitance

A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature.

Investigation of current collapse and recovery time due to deep level defect traps inβ-Ga2O3 HEMT

In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.

Field Efficacy Trial of Trapping Tea Green Leafhopper with Pheromone Insect-attracting Board

[Objective]The paper was to study the control effect of pheromone insect-attracting board on tea green leafhopper（Empoasca vitis Gothe）in fields. [Method]Pheromone insect-attracting board and ordinary insect-attracting board were used to trap tea green leafhopper in fields,and control efficacies were studied.[Result]The daily trapping effect of pheromone insect-attracting board on tea green leafhopper was 19.0 insect/grid,while that of ordinary insect-attracting board was 13.8 insect/grid.The highest control effect of pheromone insect-attracting board and ordinary insect-attracting board were 71.6% and 63. 6%,respectively.The distribution of tea green leafhopper in two types of boards showed the following regularities：more in upper edge and less in lower edge of boards,more on both sides and less in the middle of boards.The mean values of control effects of two insect-attracting boards were significantly different（t =5.66

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

AlGaN/GaN high-electron-mobility transistors(HEMTs)with postpassivation plasma treatment are demonstrated and investigated for the first time.The results show that postpassivation plasma treatment can reduce the gate leakage and enhance the drain current.Comparing with the conventional devices,the gate leakage of Al Ga N/Ga N HEMTs with postpassivation plasma decreases greatly while the drain current increases.Capacitance-voltage measurement and frequencydependent conductance method are used to study the surface and interface traps.The mechanism analysis indicates that the surface traps in the access region can be reduced by postpassivation plasma treatment and thus suppress the effect of virtual gate,which can explain the improvement of DC characteristics of devices.Moreover,the density and time constant of interface traps under the gate are extracted and analyzed.

Improved uniformity of deposited metallic layer on hybrid micro/nano-structured Si substrates fabricated by two-step laser ablation for SERS application

Surface-enhanced Raman scattering(SERS) has been widely used as an effective technique for lowconcentration molecules detections in the past decades. This work proposes a rapid and accessible process to fabricate SERS-active substrates with high uniformity and controllability based on two-step laser ablation. Laser beams directly ablate the surface of Si, concurrently creating microstructures and ejecting molten materials caused by the thermal effect that nucleate in ambient air. The nuclei grow into nanoparticles and deposit over the surface. These nanoparticles,together with microstructures, improve the light collection efficiency of the SERS-active substrates. Especially after Au thin film deposition, these nanoparticles can provide nanogaps as hotspots for SERS. By orthogonal experiment design,laser processing parameters for better performances are determined. Compared with substrates fabricated by single 1064 nm master oscillator power amplifier(MOPA) laser ablation, substrates ablated by the primary 1064 nm MOPA laser and secondary UV pulsed laser show more uniform nanoparticles’ deposition over the surface. The optimized largearea substrate has a SERS detection limit of 10^(-8)mol/L for 4-aminothiophenol(4-ATP), indicating the potential realworld applications for trace detection.

A New Analysis of Hydrogen Diffusion in Metals with Trapping

A new model of hydrogen diffusion in metals has been developed,it is more efficient to describe the hydrogen diffusion with trapping in metals.In the model newly developed an impli- cit dependence on time of hydrogen diffusion coefficient in metals with trapping was firstly built and it is shown that hydrogen diffusion coefficient will be different at different posi- tions in a dynamic process of hydrogen diffusion in a metal. Numerical solutions of the present model were obtained by finite difference method.By changing the parameters in the model the diffusion of hydrogen in a metal and the effect of trapping were described and discussed.And the comparison between the well known McNabb and Foster's model and the present model was also made.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile,the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate,and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results.

Development and Application of the 2D Relativistic Fokker-Planck Package

The Fokker Planck package which without the relativity effect has been developed in 2002. The package with relativity effect, which induced from Italy, is now developed. It conrains relativity effect, and is bounce averaged. It can deal with such as the trapping effect, wave heating, neutral beam injecting, and particle losses. It is very useful for our HL-2A experimental results analysis.

Effect of trivalent rare earth ions doping on the fluorescence properties of electron trapping materials SrS:Eu^(2+)

Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.

Coeffect of trapping behaviors on the performance of GaN-based devices

Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional（2 D） transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model.However, contrary to the expectation, the total current collapse is dramatically reduced（e.g. from 18% to 4% for the 90 nm gate-length device）. The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.

Effects of Forest Filtering and Cold Trapping on Polycyclic Aromatic Hydrocarbons Distribution in Southeast Tibet

New pollutants in remote regions have become a global issue of concern.This study collected soil,lichen,moss,and air samples from the high mountain area of southeastern Tibet to analyze the altitude pollution distribution of 16 polycyclic aromatic hydrocarbons(PAHs)and the related influencing factors.The results revealed that the average levels ofΣ6PAH in soil,moss,lichen,and air samples were 46.8 ng/g dry weight(dw),140.6 ng/g dw,712.0 ng/g dw,and 60.1 ng/m^(3),respectively.Naphthalene and phenanthrene were the most abundant individual isomers,and 2–4 rings PAHs accounted for approximately 90%of the totalΣPAH concentration in the samples.Source apportionment analysis highlighted the impact of atmospheric PAH inputs on this region.Octanol/air distribution factor(K_(oa)),altitude,plant coverage,and soil organic matter were the key determinants of PAH concentration along the altitudinal gradient.Across all the soil sampling sites,the average contribution of the forest filter effect(FFE)was greater than that of the mountain cold trapping effect based on the principal component analysis and multiple linear regression.The findings of this study strengthened the reasons for the preferential accumulation of organic pollutants in the high-altitude mountainous area,and provided important insights for effective environmental strategies of new pollutants.

Humidity sensor and ultraviolet photodetector based on carrier trapping effect and negative photoconductivity in graphene quantum dots

We report on the experimental realization of a graphene quantum dots （GQD）-based htunidity sensor and ultraviolet （UV） photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relative humidity （RH） of the surrounding environment due to the carrier trapping effect, which forms the basis of a humidity sensor. When the sensor is operated in the dark state, the sensitivity can reach as high as 0.48 nS RH-^1. The GQD are also found to exhibit light intensity dependent negative photoconductivity under the UV irradiation, which can be exploited for UV detection. As a result of these carrier trapping and de-trapping processes, the performance of the photodetector can be significantly improved with the increasing RH, and the photoresponsivity can reach a high value of-418.1 μA W^-1 in the high humid state of RH=90%.