In land warfare,trenches serve as vital defensive fortifications,offering protection to soldiers while engaging in combat.However,despite their protective function,soldiers often sustain injuries within these trenches...In land warfare,trenches serve as vital defensive fortifications,offering protection to soldiers while engaging in combat.However,despite their protective function,soldiers often sustain injuries within these trenches.The lack of corresponding blast data alongside empirical injury reports presents a significant knowledge gap,particularly concerning the blast pressures propagating within trench spaces following nearby explosions.This absence hinders the correlation between blast parameters,trench geometry,and reported injury cases,limiting our understanding of blast-related risks within trenches.This paper addresses the critical aspect of blast propagation within trench systems,essential for evaluating potential blast injury risks to individuals within these structures.Through advanced computational fluid dynamics(CFD)simulations,the study comprehensively investigates blast injury risks resulting from explosions near military trenches.Employing a sophisticated computational model,the research analyzes the dynamic blast effects within trenches,considering both geometrical parameters and blast characteristics influenced by explosive weight and scaled distance.The numerical simulations yield valuable insights into the impact of these parameters on blast injury risks,particularly focusing on eardrum rupture,lung injury,and traumatic brain injury levels within the trench.The findings elucidate distinct patterns of high-risk zones,highlighting unique characteristics of internal explosions due to confinement and venting dynamics along the trench.This study underscores the significance of detailed numerical modeling in assessing blast injury risks and provides a novel knowledge base for understanding risks associated with explosives detonating near military trenches.The insights gained contribute to enhancing safety measures in both military and civilian contexts exposed to blast events near trench structures.展开更多
Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require car...Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.展开更多
In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained...In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.展开更多
Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in ...Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.展开更多
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi...A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.展开更多
A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors ex...A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load.展开更多
A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane...A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.展开更多
Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation fo...Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation for the shallow trench. According to a(r) of the designed trench shape and pre-chosen K-c, the reduction coefficient and sheltering effect can be decided by the result provided in this paper.展开更多
The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homo...The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homogeneous subjected to a vertical harmonic load producing steady-state vibration. The present model is validated by comparing it with previously published works. The key geometrical features of a trench, i.e., its depth, width, and distance from the source of excitation, are normalized with respect to the Rayleigh wavelength. The attenuation of vertical and horizontal components of vibration is studied for various trench dimensions against trench locations varied from an active to a passive case. Results are depicted in non-dimensional forms and conclusions are drawn regarding the effects of geometrical parameters in attenuating vertical and horizontal vibration components. The screening efficiency is primarily governed by the normalized depth of the barrier. The effect of width has little significance except in some specific cases. Simplified regression models are developed to estimate average amplitude reduction factors. The models applicable to vertical vibration cases are found to be in excellent agreement with previously published results.展开更多
The low removal efficiency of total nitrogen （TN） is one of the main disadvantages of traditional single stage subsurface infiltration system, which combines an anaerobic tank and a soil filter field. In this study,...The low removal efficiency of total nitrogen （TN） is one of the main disadvantages of traditional single stage subsurface infiltration system, which combines an anaerobic tank and a soil filter field. In this study, a full-scale, two-stage anaerobic tank and soil trench system was designed and operated to evaluate the feasibility and performances in treating sewage from a school campus for over a one-year monitoring period. The raw sewage was prepared and fed into the first anaerobic tank and second tank by 60% and 40%, respectively. This novel process could decrease chemical oxygen demand with the dichromate method by 89%-96%, suspended solids by 91%-97%, and total phosphorus by 91%-97%. The denitrification was satisfactory in the second stage soil trench, so the removals of TN as well as ammonia nitrogen （NH4^＋-N） reached 68%-75% and 96% 99%, respectively. It appeared that the removal efficiency of TN in this two-stage anaerobic tank and soil trench system was more effective than that in the single stage soil infiltration system. The effluent met the discharge standard for the sewage treatment plant （GB18918-2002） of China.展开更多
This paper proposes an oxide filled extended trench gate super junction （SJ） MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, ne...This paper proposes an oxide filled extended trench gate super junction （SJ） MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.展开更多
Microbial diversity in the abyssal sediments beneath the seafloor of 30,94,and 151cm near the southern end of the Mariana Trench was analyzed in the Illumina HiSeq 2500 platform.Results show that the microbial populat...Microbial diversity in the abyssal sediments beneath the seafloor of 30,94,and 151cm near the southern end of the Mariana Trench was analyzed in the Illumina HiSeq 2500 platform.Results show that the microbial populations were dominated by bacteria but merely no archaea were identifi ed at the three depths.In the bacterial community,Proteobacteria and Firmicutes dominated the total taxon tags,followed by Bacteroidetes,Actinobacteria,Planctomycetes,Cyanobacteria,and Chloroflexi,which together account for over 99%of the total population.Similar to that in the seawater in the trench,the operational taxonomic units(OTUs)belonging to Gammaproteobacteria from the sediment samples showed high abundance.However,common bacterial OTUs in the water of the trench including Nitrospirae and Marinimicrobia were hardly found in the sediments from the southern Mariana Trench or the hadal region.Therefore,this study documented for the first time the compositions of microbial diversity in the trench sediments,revealed the difference in microbial diversity in water and sediment of the trench and will enrich the knowledge on the microbial diversity in the abyssal areas.展开更多
A new ultralow gate–drain charge(Q_(GD)) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures(DS-MOS): one is the grounded split ga...A new ultralow gate–drain charge(Q_(GD)) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures(DS-MOS): one is the grounded split gate(SG), the other is the P+shielding region(PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate–drain capacitance(C_(GD)) into the gate–source capacitance(C_(GS)) and drain–source capacitance(C_(DS)) in series.Thus the C_(GD) is reduced and the proposed DS-MOS obtains ultralow Q_(GD). Compared with the double-trench MOSFET(DT-MOS)and the conventional trench MOSFET(CT-MOS), the proposed DS-MOS decreases the Q_(GD) by 85% and 81%, respectively.Moreover, the figure of merit(FOM), defined as the product of specific on-resistance(R_(on, sp)) and Q_(GD)(R_(on, sp)Q_(GD)), is reduced by 84% and 81%, respectively.展开更多
文摘In land warfare,trenches serve as vital defensive fortifications,offering protection to soldiers while engaging in combat.However,despite their protective function,soldiers often sustain injuries within these trenches.The lack of corresponding blast data alongside empirical injury reports presents a significant knowledge gap,particularly concerning the blast pressures propagating within trench spaces following nearby explosions.This absence hinders the correlation between blast parameters,trench geometry,and reported injury cases,limiting our understanding of blast-related risks within trenches.This paper addresses the critical aspect of blast propagation within trench systems,essential for evaluating potential blast injury risks to individuals within these structures.Through advanced computational fluid dynamics(CFD)simulations,the study comprehensively investigates blast injury risks resulting from explosions near military trenches.Employing a sophisticated computational model,the research analyzes the dynamic blast effects within trenches,considering both geometrical parameters and blast characteristics influenced by explosive weight and scaled distance.The numerical simulations yield valuable insights into the impact of these parameters on blast injury risks,particularly focusing on eardrum rupture,lung injury,and traumatic brain injury levels within the trench.The findings elucidate distinct patterns of high-risk zones,highlighting unique characteristics of internal explosions due to confinement and venting dynamics along the trench.This study underscores the significance of detailed numerical modeling in assessing blast injury risks and provides a novel knowledge base for understanding risks associated with explosives detonating near military trenches.The insights gained contribute to enhancing safety measures in both military and civilian contexts exposed to blast events near trench structures.
基金funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU),under grant agreement No.101007229support from the European Union’s Horizon 2020 Research and Innovation Programme,Germany,France,Belgium,Austria,Sweden,Spain,and Italy
文摘Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.
文摘In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.
文摘Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.
文摘A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.
文摘A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load.
文摘A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.
文摘Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation for the shallow trench. According to a(r) of the designed trench shape and pre-chosen K-c, the reduction coefficient and sheltering effect can be decided by the result provided in this paper.
文摘The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homogeneous subjected to a vertical harmonic load producing steady-state vibration. The present model is validated by comparing it with previously published works. The key geometrical features of a trench, i.e., its depth, width, and distance from the source of excitation, are normalized with respect to the Rayleigh wavelength. The attenuation of vertical and horizontal components of vibration is studied for various trench dimensions against trench locations varied from an active to a passive case. Results are depicted in non-dimensional forms and conclusions are drawn regarding the effects of geometrical parameters in attenuating vertical and horizontal vibration components. The screening efficiency is primarily governed by the normalized depth of the barrier. The effect of width has little significance except in some specific cases. Simplified regression models are developed to estimate average amplitude reduction factors. The models applicable to vertical vibration cases are found to be in excellent agreement with previously published results.
基金the National High Technology Research and Development Program (863 Program) of China(No2002AA601012-01)
文摘The low removal efficiency of total nitrogen （TN） is one of the main disadvantages of traditional single stage subsurface infiltration system, which combines an anaerobic tank and a soil filter field. In this study, a full-scale, two-stage anaerobic tank and soil trench system was designed and operated to evaluate the feasibility and performances in treating sewage from a school campus for over a one-year monitoring period. The raw sewage was prepared and fed into the first anaerobic tank and second tank by 60% and 40%, respectively. This novel process could decrease chemical oxygen demand with the dichromate method by 89%-96%, suspended solids by 91%-97%, and total phosphorus by 91%-97%. The denitrification was satisfactory in the second stage soil trench, so the removals of TN as well as ammonia nitrogen （NH4^＋-N） reached 68%-75% and 96% 99%, respectively. It appeared that the removal efficiency of TN in this two-stage anaerobic tank and soil trench system was more effective than that in the single stage soil infiltration system. The effluent met the discharge standard for the sewage treatment plant （GB18918-2002） of China.
基金supported by the Doctor Scientific Research Start-up Foundation of Xi'an University of Technology of China
文摘This paper proposes an oxide filled extended trench gate super junction （SJ） MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.
基金supported by the National Science Foundation for Young Scientists of China(No.41706165)the National Science Foundation for Post-doctoral Scientists of China(No.2016M602200)+3 种基金supported by the National Program on Global Change and Air-Sea Interaction and the Fourth Polar Observation Program(i.e.Deep Sea Exploration Program,Qingdao National Laboratory for Marine Science & Technology)supported by grants from the "1000 Talents Program" of Chinathe "100 Talents Program" of the Chinese Academy of Sciencesthe "AoShan Talents Program" of Qingdao National Laboratory for Marine Science and Technology(No.2015ASTP)
文摘Microbial diversity in the abyssal sediments beneath the seafloor of 30,94,and 151cm near the southern end of the Mariana Trench was analyzed in the Illumina HiSeq 2500 platform.Results show that the microbial populations were dominated by bacteria but merely no archaea were identifi ed at the three depths.In the bacterial community,Proteobacteria and Firmicutes dominated the total taxon tags,followed by Bacteroidetes,Actinobacteria,Planctomycetes,Cyanobacteria,and Chloroflexi,which together account for over 99%of the total population.Similar to that in the seawater in the trench,the operational taxonomic units(OTUs)belonging to Gammaproteobacteria from the sediment samples showed high abundance.However,common bacterial OTUs in the water of the trench including Nitrospirae and Marinimicrobia were hardly found in the sediments from the southern Mariana Trench or the hadal region.Therefore,this study documented for the first time the compositions of microbial diversity in the trench sediments,revealed the difference in microbial diversity in water and sediment of the trench and will enrich the knowledge on the microbial diversity in the abyssal areas.
基金supported by the National Key Research and Development Program of China(No.2016YFB0400502)
文摘A new ultralow gate–drain charge(Q_(GD)) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures(DS-MOS): one is the grounded split gate(SG), the other is the P+shielding region(PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate–drain capacitance(C_(GD)) into the gate–source capacitance(C_(GS)) and drain–source capacitance(C_(DS)) in series.Thus the C_(GD) is reduced and the proposed DS-MOS obtains ultralow Q_(GD). Compared with the double-trench MOSFET(DT-MOS)and the conventional trench MOSFET(CT-MOS), the proposed DS-MOS decreases the Q_(GD) by 85% and 81%, respectively.Moreover, the figure of merit(FOM), defined as the product of specific on-resistance(R_(on, sp)) and Q_(GD)(R_(on, sp)Q_(GD)), is reduced by 84% and 81%, respectively.
