An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure,wh...An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure,which can absorb both the electron current and hole current. The second emitter on the top of the p-pillar acts as the hole current diverter, leading to an improved latch-up capability without sacrificing the off-state breakdown voltage（BV） and turn-off loss. The simulation shows that the latch-up limit of the SJ-IGBT increases from 15000 to 28300 A/cm^2 at VGE D10 V, the BV is 810 V, and the turn off loss is 6.5 m J/cm^2 at Von D1.2 V.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61204083)the Natural Science Foundation of the Jiangsu Province of China(Nos.BK2012204,BY2011146)the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus
文摘An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure,which can absorb both the electron current and hole current. The second emitter on the top of the p-pillar acts as the hole current diverter, leading to an improved latch-up capability without sacrificing the off-state breakdown voltage（BV） and turn-off loss. The simulation shows that the latch-up limit of the SJ-IGBT increases from 15000 to 28300 A/cm^2 at VGE D10 V, the BV is 810 V, and the turn off loss is 6.5 m J/cm^2 at Von D1.2 V.
