Submarine Trenches and Wave-Wave Interactions Enhance the Sediment Resuspension Induced by Internal Solitary Waves

Internal solitary waves(ISWs)are nonlinear fluctuations in nature that could cause significant interactions between seawater and the seabed.ISWs have been proven to be an adequate cause of sediment resuspension in shallow and deep-sea environments.In the South China Sea,ISWs have the largest amplitude globally and directly interact with the seabed near the Dongsha slope in the northern South China Sea.We analyzed the water profile and high-resolution multibeam bathymetric data near the Dongsha slope and revealed that submarine trenches have a significant impact on the sediment resuspension by ISWs.Moreover,ISWs in the zone of the wave-wave interaction enhanced sediment mixing and resuspension.The concentration of the suspended particulate matter inside submarine trenches was significantly higher than that outside them.The concentration of the suspended particulate matter near the bottoms of trenches could be double that outside them and formed a vast bottom nepheloid layer.Trenches could increase the concentration of the suspended particulate matter in the entire water column,and a water column with a high concentration of the suspended particulate matter was formed above the trench.ISWs in the wave-wave interaction zone near Dongsha could induce twice the concentration of the bottom nepheloid layer than those in other areas.The sediment resuspension caused by ISWs is a widespread occurrence all around the world.The findings of this study can offer new insights into the influence of submarine trench and wave-wave interaction on sediment resuspension and help in geohazard assessment.

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

Electrodeposition of Gold to Conformally Fill High-Aspect-Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.

Focal depth,magnitude,and frequency distribution of earthquakes along oceanic trenches

The occurrence of earthquakes in oceanic tren- ches can pose a tsunami threat to lives and properties in active seismic zones. Therefore, the knowledge of focal depth, magnitude, and time distribution of earthquakes along the trenches is needed to investigate the future occurrence of earthquakes in the zones. The oceanic trenches studied, were located from the seismicity map on： latitude ＋51 ° to＋53° and longitude -160° to 176° （Aleutian Trench）, latitude ＋40° to ＋53° and longitude ＋148° to＋165° （Japan Trench）, and latitude -75° to -64° and longitude -15° to ＋30° （Peru-Chile Trench）. The following features of seis- mic events were considered： magnitude distribution, focal depth distribution, and time distribution of earthquake. The results obtained in each trench revealed that the earthquakes increased with time in all the regions. This implies that the lithospheric layer is becoming more unstable. Thus, tectonic stress accumulation is increasing with time. The rate of increase in earthquakes at the Peru-Chile Trench is higher than that of the Japan Trench and the Aleutian Trench. This implies that the convergence of lithospheric plates is higher in the Peru-Chile Trench. Deep earthquakes were observed across all the trenches. The shallow earthquakes were more prominent than intermediate and deep earthquakes in all thetrenches. The seismic events in the trenches are mostly of magnitude range 3.0-4.9. This magnitude range may indi- cate the genesis of mild to moderate tsunamis in the trench zone in near future once sufficient slip would occur with displacement of water column.

NUMERICAL SIMULATION OF 3-D TURBULENT FLOWS OVER DREDGED TRENCHES

A 3- D free surface flow in open channels based on the Reynolds equations with the k-ε turbulence closure model is presented in this paper. Insted of the 'rigid lid' approximation, the solution of the free surface equation is implemented in the velocity-pressure iterative procedure on the basis of the conventional SIMPLE method. This model was used to compute the flow in rectangular channels with trenches dredged across the bottom. The velocity, eddy viscosity coefficient, turbulent shear stress, turbulent kinetic energy and elevation of the free surface can be obtained. The computed results are in good agreement with previous experimental data.

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.

Study of Paleoearthquakes by Excavation of Grouped Trenches on the Zemuhe Fault in Daqingliangzi,Xichang,Sichuan

Uncertainties are common in the dating of paleoearthquakes.To improve the credibility of the dating of paleoearthquakes,analysis was done on fault activity,sedimentary environment and seismo-geomorphology to investigate paleoearthquakes along the Zemuhe active fault zone.Grouped trenches were excavated near Daqingliangzi,which revealed three palaeoearthquake events aged 160a,3100a and 5500a～8900a,respectively,including recurrence intervals of about 3000a.Sedimentary processes related to strike-slip fault type earthquakes were discussed,and a sedimentary model was put forward for strike-slip faults at hillsides where drumlin and reverse scarp developed.

Study on Hydrodynamic Characteristics of Pipelines in Open Trenches

Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation for the shallow trench. According to a(r) of the designed trench shape and pre-chosen K-c, the reduction coefficient and sheltering effect can be decided by the result provided in this paper.

A Numerical Model for Natural Backfill of Pipeline Trenches Subjected to Unidirectional/Oscillatory Flows

A numerical model for the self-burial of a pipeline trench is developed. Morphological evolutions of a pipeline trench under steady-current or oscillatory-flow conditions are simulated with/without a pipeline inside the trench. The oscillatory flow in this study represents the action of waves. The two-dimensional Reynolds-averaged continuity and Navier-Stokes equations with the standard k-ε turbulence closure, as well as the sediment transport equations, are solved with the finite difference method in a curvilinear coordinate system. Both bed and suspended loads of sediment transport are included in the morphological model. Because of the lack of experimental data on the backfilling of pipeline trenches, the numerical model is firstly verified against three closely-relevant experiments available in literature. A detailed measurement of the channel migration phenomenon under steady currents is employed for the assessment of the integral performance of the model. The two experimental results from U-tube tests are used to validate the model's ability in predicting oscillatory flows. Different time-marching schemes are employed for the morphological computation under unidirectional and oscillatory conditions. It is found that vortex motions within the trench play an important role in the trench development.

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT.

Variable-K double trenches SOI LDMOS with high-concentration P-pillar

A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant media to electric fields.The device features variable-K dielectric double trenches and a P-pillar between the trenches(VK DT-P LDMOS).The low-K dielectric layer on the surface increases electric field of it.Adding a variable-K material introduces a new electric field peak to the drift region,so as to optimize electric field inside the device.Introduction of the high-concentration vertical P-pillar between the two trenches effectively increases doping concentration of the drift region and maintains charge balance inside it.Thereby,breakdown voltage(BV)of the device is increased.The double conductive channels provide two current paths that significantly reduce specific on-resistance(Ron,sp).Simulation results demonstrate that a 17-μm-length device can achieve a BV of 554 V and a low on-resistance of 13.12 mΩ·cm^2.The Ron,sp of VK DT-P LDMOS is reduced by 78.9%compared with the conventional structure.

Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

Widespread and active piezotolerant microorganisms mediate phenolic compound degradation under high hydrostatic pressure in hadal trenches

Phenolic compounds,as well as other aromatic compounds,have been reported to be abundant in hadal trenches.Although high-throughput sequencing studies have hinted at the potential of hadal microbes to degrade these compounds,direct microbiological,genetic and biochemical evidence under in situ pressures remain absent.Here,a microbial consortium and a pure culture of Pseudomonas,newly isolated from Mariana Trench sediments,efficiently degraded phenol under pressures up to 70 and 60 MPa,respectively,with concomitant increase in biomass.By analyzing a high-pressure(70 MPa)culture metatranscriptome,not only was the entire range of metabolic processes under high pressure generated,but also genes encod-ing complete phenol degradation via ortho-and meta-cleavage pathways were revealed.The isolate of Pseudomonas also contained genes encoding the complete degradation pathway.Six transcribed genes(dmpKLMNOP_(sed))were functionally identified to encode a multicomponent hydroxylase catalyzing the hydroxylation of phenol and its methylated derivatives by heterogeneous expression.In addition,key catabolic genes identified in the metatranscriptome of the high-pressure cultures and genomes of bacterial isolates were found to be all widely distributed in 22 published hadal microbial metagenomes.At microbiological,genetic,bioinformatics,and biochemical levels,this study found that microorganisms widely found in hadal trenches were able to effectively drive phenolic compound degradation under high hydrostatic pressures.This information will bridge a knowledge gap concerning the microbial aromatics degradation within hadal trenches.

Effects of Trenched Film Hole Configurations on the Endwall Film Cooling and Suction Side Phantom Cooling

To maximize the turbine thermal efficiency, modern gas turbine’s inlet temperature is significantly augmented within the past few decades. To prolong the lifespan of gas turbines, many efficient cooling techniques have been proposed and applied in the endwall cooling schemes. However, conventional discrete film hole does not take effect at the leading edge nearby region. In this research, how the trenched film hole configurations affects the endwall cooling and phantom cooling characteristics were deeply studied by using a verified approach. Steady 3D Reynolds-averaged Navier-Stokes(RANS) governing equations together with the shear stress transport(SST) k-w turbulence model have been solved. Firstly, results indicate that trenched film holes greatly influence the cooling effectiveness at leading edge nearby region compared to normal case. Nevertheless, suction side phantom cooling is hardly influenced by the trenched film holes. Secondly, the case with a smaller trench width obtains higher endwall cooling effectiveness, particularly at upstream region. More importantly, the cases with W=3D achieve large cooling effectiveness at leading edge nearby region with little influence by trench depth. Additionally, majority of trenched film holes coolant flow is driven towards middle passage. Therefore, the suction side phantom cooling is unaffected by the trenched film holes.

Blast injury risks to humans within a military trench

In land warfare,trenches serve as vital defensive fortifications,offering protection to soldiers while engaging in combat.However,despite their protective function,soldiers often sustain injuries within these trenches.The lack of corresponding blast data alongside empirical injury reports presents a significant knowledge gap,particularly concerning the blast pressures propagating within trench spaces following nearby explosions.This absence hinders the correlation between blast parameters,trench geometry,and reported injury cases,limiting our understanding of blast-related risks within trenches.This paper addresses the critical aspect of blast propagation within trench systems,essential for evaluating potential blast injury risks to individuals within these structures.Through advanced computational fluid dynamics(CFD)simulations,the study comprehensively investigates blast injury risks resulting from explosions near military trenches.Employing a sophisticated computational model,the research analyzes the dynamic blast effects within trenches,considering both geometrical parameters and blast characteristics influenced by explosive weight and scaled distance.The numerical simulations yield valuable insights into the impact of these parameters on blast injury risks,particularly focusing on eardrum rupture,lung injury,and traumatic brain injury levels within the trench.The findings elucidate distinct patterns of high-risk zones,highlighting unique characteristics of internal explosions due to confinement and venting dynamics along the trench.This study underscores the significance of detailed numerical modeling in assessing blast injury risks and provides a novel knowledge base for understanding risks associated with explosives detonating near military trenches.The insights gained contribute to enhancing safety measures in both military and civilian contexts exposed to blast events near trench structures.

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.

孔隙率对矩形沟槽上垂直多孔屏障的波浪散射效应影响

The effect of porosity on surface wave scattering by a vertical porous barrier over a rectangular trench is studied here under the assumption of linearized theory of water waves.The fluid region is divided into four subregions depending on the position of the barrier and the trench.Using the Havelock’s expansion of water wave potential in different regions along with suitable matching conditions at the interface of different regions,the problem is formulated in terms of three integral equations.Considering the edge conditions at the submerged end of the barrier and at the edges of the trench,these integral equations are solved using multi-term Galerkin approximation technique taking orthogonal Chebyshev’s polynomials and ultra-spherical Gegenbauer polynomial as its basis function and also simple polynomial as basis function.Using the solutions of the integral equations,the reflection coefficient,transmission coefficient,energy dissipation coefficient and horizontal wave force are determined and depicted graphically.It was observed that the rate of convergence of the Galerkin method in computing the reflection coefficient,considering special functions as basis function is more than the simple polynomial as basis function.The change of porous parameter of the barrier and variation of trench width and height significantly contribute to the change in the scattering coefficients and the hydrodynamic force.The present results are likely to play a crucial role in the analysis of surface wave propagation in oceans involving porous barrier over submarine trench.

The Origins of the Arc-Shaped Langshan Uplift and Linhe Trench

In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.

一种抗辐射Trench型N 30 V MOSFET器件设计

由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N30VMOSFET器件。实验结果显示,产品击穿电压典型值达42V,特征导通电阻为51mΩ·mm^(2)。在^(60)Co γ射线100krad(Si)条件下,器件阈值电压漂移仅为-0.3V,漏源漏电流从34nA仅上升到60nA。采用能量为2006MeV、硅中射程为116μm、线性能量传输(LET)值为75.4MeV·cm^(2)/mg的^(118)Ta离子垂直入射该器件,未发生单粒子事件。