Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

Effects of Trenched Film Hole Configurations on the Endwall Film Cooling and Suction Side Phantom Cooling

To maximize the turbine thermal efficiency, modern gas turbine’s inlet temperature is significantly augmented within the past few decades. To prolong the lifespan of gas turbines, many efficient cooling techniques have been proposed and applied in the endwall cooling schemes. However, conventional discrete film hole does not take effect at the leading edge nearby region. In this research, how the trenched film hole configurations affects the endwall cooling and phantom cooling characteristics were deeply studied by using a verified approach. Steady 3D Reynolds-averaged Navier-Stokes(RANS) governing equations together with the shear stress transport(SST) k-w turbulence model have been solved. Firstly, results indicate that trenched film holes greatly influence the cooling effectiveness at leading edge nearby region compared to normal case. Nevertheless, suction side phantom cooling is hardly influenced by the trenched film holes. Secondly, the case with a smaller trench width obtains higher endwall cooling effectiveness, particularly at upstream region. More importantly, the cases with W=3D achieve large cooling effectiveness at leading edge nearby region with little influence by trench depth. Additionally, majority of trenched film holes coolant flow is driven towards middle passage. Therefore, the suction side phantom cooling is unaffected by the trenched film holes.

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.

孔隙率对矩形沟槽上垂直多孔屏障的波浪散射效应影响

The effect of porosity on surface wave scattering by a vertical porous barrier over a rectangular trench is studied here under the assumption of linearized theory of water waves.The fluid region is divided into four subregions depending on the position of the barrier and the trench.Using the Havelock’s expansion of water wave potential in different regions along with suitable matching conditions at the interface of different regions,the problem is formulated in terms of three integral equations.Considering the edge conditions at the submerged end of the barrier and at the edges of the trench,these integral equations are solved using multi-term Galerkin approximation technique taking orthogonal Chebyshev’s polynomials and ultra-spherical Gegenbauer polynomial as its basis function and also simple polynomial as basis function.Using the solutions of the integral equations,the reflection coefficient,transmission coefficient,energy dissipation coefficient and horizontal wave force are determined and depicted graphically.It was observed that the rate of convergence of the Galerkin method in computing the reflection coefficient,considering special functions as basis function is more than the simple polynomial as basis function.The change of porous parameter of the barrier and variation of trench width and height significantly contribute to the change in the scattering coefficients and the hydrodynamic force.The present results are likely to play a crucial role in the analysis of surface wave propagation in oceans involving porous barrier over submarine trench.

The Origins of the Arc-Shaped Langshan Uplift and Linhe Trench

In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.

一种抗辐射Trench型N 30 V MOSFET器件设计

由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N30VMOSFET器件。实验结果显示,产品击穿电压典型值达42V,特征导通电阻为51mΩ·mm^(2)。在^(60)Co γ射线100krad(Si)条件下,器件阈值电压漂移仅为-0.3V,漏源漏电流从34nA仅上升到60nA。采用能量为2006MeV、硅中射程为116μm、线性能量传输(LET)值为75.4MeV·cm^(2)/mg的^(118)Ta离子垂直入射该器件,未发生单粒子事件。

Submarine Trenches and Wave-Wave Interactions Enhance the Sediment Resuspension Induced by Internal Solitary Waves

Internal solitary waves(ISWs)are nonlinear fluctuations in nature that could cause significant interactions between seawater and the seabed.ISWs have been proven to be an adequate cause of sediment resuspension in shallow and deep-sea environments.In the South China Sea,ISWs have the largest amplitude globally and directly interact with the seabed near the Dongsha slope in the northern South China Sea.We analyzed the water profile and high-resolution multibeam bathymetric data near the Dongsha slope and revealed that submarine trenches have a significant impact on the sediment resuspension by ISWs.Moreover,ISWs in the zone of the wave-wave interaction enhanced sediment mixing and resuspension.The concentration of the suspended particulate matter inside submarine trenches was significantly higher than that outside them.The concentration of the suspended particulate matter near the bottoms of trenches could be double that outside them and formed a vast bottom nepheloid layer.Trenches could increase the concentration of the suspended particulate matter in the entire water column,and a water column with a high concentration of the suspended particulate matter was formed above the trench.ISWs in the wave-wave interaction zone near Dongsha could induce twice the concentration of the bottom nepheloid layer than those in other areas.The sediment resuspension caused by ISWs is a widespread occurrence all around the world.The findings of this study can offer new insights into the influence of submarine trench and wave-wave interaction on sediment resuspension and help in geohazard assessment.

Lateral downslope transport and tentative sedimentary organic carbon box model in the southern Yap Trench,western Pacific Ocean

Sediment collapse and subsequent lateral downslope migration play important roles in shaping the habitats and regulating sedimentary organic carbon(SOC)cycling in hadal trenches.In this study,three sediment cores were collected using a human-occupied vehicle across the axis of the southern Yap Trench(SYT).The total organic carbon(TOC)and total nitrogen(TN)contents,δ13C,radiocarbon ages,specific surface areas,and grain size compositions of sediments from three cores were measured.We explored the influence of the lateral downslope transport on the dispersal of the sediments and established a tentative box model for the SOC balance.In the SYT,the surface TOC content decreased with water depth and was decoupled by the funneling effect of the V-shaped hadal trench.However,the sedimentation(0.0025 cm/a)and SOC accumulation rates(∼0.038 g/(m^(2)·a)(in terms of OC))were approximately 50%higher in the deeper hadal region than in the abyssal region(0.0016 cm/a and∼0.026 g/(m^(2)·a)(in terms of OC),respectively),indicating the occurrence of lateral downslope transport.The fluctuating variations in the prokaryotic abundances and the SOC accumulation rate suggest the periodic input of surficial sediments from the shallow region.The similar average TOC(0.31%–0.38%),TN(0.06%–0.07%)contents,and SOC compositions(terrestrial OC(11%–18%),marine phytoplanktonic OC(45%–53%),and microbial OC(32%–44%))of the three sites indicate that the lateral downslope transport has a significant mixing effect on the SOC composition.The output fluxes of the laterally transported SOC(0.44–0.56 g/(m^(2)·a)(in terms of OC))contributed approximately(47%–73%)of the total SOC input,and this proportion increased with water depth.The results of this study demonstrate the importance of lateral downslope transport in the spatial distribution and development of biomes.

Characteristics of dissolved sugars in the Southern Yap Trench from sea surface to hadal zone

2,4,6-Tripyridine-s-triazine(TPTZ)spectrophotometric method was applied to determine the concentrations of dissolved monosaccharides(MCHO),polysaccharides(PCHO),and total carbohydrate(TCHO)in seawater samples collected from sea surface to hadal zone and sediment-seawater interface of the Southern Yap Trench in the Western Pacific Ocean.Results show that the concentrations of MCHO,PCHO,and TCHO ranged from 6.3 to 22.3μmol C/L,1.1 to 25.4μmol C/L,and 12.1 to 44.9μmol C/L,respectively,from the euphotic layer to the hadal zone of the trench.At different sampling stations,the concentrations of MCHO,PCHO,and TCHO in the seawater showed complex vertical variation characteristics,but the overall variation trends were decreasing with water depth.In the Southern Yap Trench,the maximum concentration of MCHO in the seawater appeared in the euphotic layer,and the minimum in the hadal zone.The maximum concentration of PCHO appeared in the euphotic layer,and the minimum in the bathypelagic layer.The water layer where the maxima and minima of the average concentration of TCHO appeared was consistent with that of PCHO.PCHO was the major component of TCHO in the seawater of the Southern Yap Trench.In the seawater from the sediment-seawater interface,the concentrations of MCHO,PCHO,and TCHO ranged from 8.4 to 10.6μmol C/L,3.8 to 5.8μmol C/L,and 12.2 to 15.2μmol C/L,respectively,and MCHO was the major component of TCHO.The key factors affecting the concentration and existing forms of dissolved sugars in the seawater of the Southern Yap Trench included photosynthesis,respiration,polysaccharide hydrolysis,adsorption and desorption of particulate matter,trench“funnel effect”,deep ocean currents,sediment resuspension,and etc.This study provided fundamental data about labile organic matter in abyss and hadal zone of marine environment,which is significant for further understanding of deep-sea organic carbon cycle.

Characteristics of vertical distributions of methane and dimethylsulphoniopropionate in the southern Yap Trench

Methane(CH_(4) )and dimethylsulphoniopropionate(DMSP)are major carbon and sulfur sources for bacterioplankton in the ocean.We investigated the characteristics of CH_(4) and DMSP in the southern Yap Trench from sea surface to hadal zone in June 2017.We found that concentrations of CH_(4) varied from 1.5 to 4.5 nmol/L with saturation between 94% and 204% in the euphotic layer.Concentrations of dissolved DMSP(DMSPd)ranged from 0.5 to 3.7 nmol/L with higher values in surface water and decreased with depth.Concentrations of particulate DMSP(DMSPp)varied from 0 to 13.6 nmol/L.Concentrations of total DMSP(DMSPt)ranged 2.0-15.2 nmol/L.Their concentrations decreased slightly and reached consistent levels in 200-3000-m depth due probably to heterotrophic bacterial production in marine aphotic and high-pressure environments.An exception occurred around 4000-m depth where their concentrations increased considerably and then decreased in deeper water.This previously unrecognized phenomenon sheds light on the elevated concentrations of DMSP in the abyssal layer that might be affected by the Lower Circumpolar Deep Water(LCPW).Concentrations of CH_(4) in seawater of the Benthic Boundary Layer of the southern Yap Trench were slightly higher than those in the water column at approximate depth,and concentrations of DMSP in seawater of the Benthic Boundary Layer of the southern Yap Trench were not much higher than those in the water column at the approximate depth,indicating that sediment was a weak source of CH_(4) but was not a source of DMSP for seawater in the study area.This study presented clear correlations between CH_(4) and DMSP from sea surface to sea bottom,proving that DMSP might be a potential substrate for CH_(4) not only in oxic surface seawater but also in deep water.

Tectonics of the Solomon Sea Basin from Vertical Gravity Gradient and Seismic Data

The Solomon Sea Basin is a Cenozoic back-arc spreading basin within the convergence system of the Pacific and Indo-Australian plates.Against the background of subduction polarity reversal,the current Solomon Sea Basin gradually formed a rhombic morphology with the subduction of the basin along the New Britain Trench and the Trobriand Trough.By analyzing the vertical gravity gradient,natural earthquake and seismic reflection data,this study determines the structural characteristics of the Solomon Sea Basin.It was found that the tectonics of the basin are characterized by the original expansion structure within the central part in addition to the structure induced by the latest subduction along the basin margin.The original spreading structure of the basin presented an east–west linear graben and horst controlled by normal faults during the basin expansion period.As a result of the subduction and slab-pull of the Solomon Sea Basin,extensional structure belts parallel to the New Britain Trench formed along the basin margin.

锚泊线海床开槽与锚泊基础承载力研究进展综述

Mooring systems are usually adopted to position floating structures,including mooring lines and anchors,and directly determine the safety of floating structures.Seabed inspection reported that seabed trenches induced by mooring line-soil interaction appear in front of the anchor and reduce the anchor bearing capacity.This work first introduces the research progress of mooring line-soil interaction and seabed trenching simulation.Research about the suction anchor capacity in clay and sand is presented,and the seabed trench influence on anchor capacity is analyzed.For anchor analysis,this study gives a new perspective to analyze anchor installation and bearing capacity,i.e.,structure-soil interface characteristic.Some common anchor types are analyzed.Results showed that seabed trench simulation is still needed to acquire trench 3D profiles,in which the mooring line-soil dynamic interaction cannot be ignored.At present,the trench influence is not considered in suction anchor design,making the design dangerous.For the anchor,the interface shear characteristics control the most unfavorable loading conditions.Thus,accurate interface parameters should be obtained for anchor analysis.

The Subduction Structure Beneath the New Britain Island Arc and the Adjacent Region from Double-Difference Tomography

We applied double-difference tomography to relocate seismic events and determine the lithospheric velocity structure beneath the New Britain Island arc and the South Bismarck Sea Basin,based on the local P wave arrival time dataset collected by the International Seismological Centre.Results of the seismic relocation and velocity inversion show that the subduction of Solomon Sea Plate along the New Britain Trench is spatially different above 150 km,and the subduction angle of the slab on the west side is higher than that on the east side.The relocated earthquakes also show that there are double seismic zones at the depths of about 30–90km beneath the New Britain Island Arc.The velocity structure shows that the dehydration of the subducting slab caused the low-velocity anomalies in mantle wedge above the slab,which are associated with the magmatic activities around the New Guinea-New Britain Island arc.Moreover,it shows that there is another low-velocity anomaly zone beneath the Bismarck mid-oceanic ridge with spatial variation.Beneath the west of the Bismarck mid-oceanic ridge,the low-velocity anomaly is weakly connected to the subducted Solomon Sea slab.Conversely,the low-velocity anomaly beneath the Manus Sea Basin is highly intertwined to the subducting slab and its mantle wedge,indicating that the subduction of the Solomon Sea Plate might be a key deep dynamic factor that drives the spreading of the Manus Sea Basin and the separation of the Bismarck Plate.

Dynamic Properties of Steel Catenary Riser near Touchdown Point Under Coplanar Vessel Heave and Vortex Induced Vibration

The present study establishes a simple numerical model for the coupled response of a steel catenary riser(SCR) subjected to coplanar vessel motion and vortex-induced vibration(VIV). Owing to the large deflection of the SCR, the geometric nonlinearity is considered in this model. The hydrodynamic force comprises the excitation force and hydrodynamic damping, where the excitation force that only exists when the non-dimensional frequency is located in the lock-in range, is associated with the VIV. The hydrodynamic force model is validated based on the published VIV test data.As for the seabed resistance at the touchdown zone(TDZ), integrated with an initial seabed trench, the hysteretic feature is modeled. Based on the model, the study emphasizes on the coupled response characteristics near the touchdown point(TDP) induced by coplanar vessel heave and VIV, and analyzes the sensitivity of the coupled response to the heaving amplitude and frequency. It is found that with the increase of the heave amplitude and frequency, the VIV can be obviously mitigated, but the heave-related response in the coupled analysis seems to be close to that in the heave-only simulation. Finally, the fatigue damage near TDP is parametrically investigated based on the separate analysis and the coupled analysis. The results demonstrate that the coupled effect plays a significant role in the fatigue assessment near TDP. Besides, the proportion of the coupled effect accounting for the total fatigue damage decreases with the increasing seabed stiffness, while increases with the increasing seabed trench depth.

Vertical variations and composition of dissolved free amino acid in the seawater of the Yap Trench in the western Pacific Ocean

The composition and concentration of dissolved free amino acid(DFAA)of seawater samples collected in May 2016 from the surface to the hadal zone of the northern region of the Yap Trench were analyzed by pre-column derivatization of o-phthalaldehyde.Results show that the average concentration of DFAA in the study area was 0.47±0.36μmol/L.In different sampling stations,the concentrations of DFAA with water depth showed complex variation patterns.At the sediment-seawater interface,the concentrations of DFAA in the western side of the trench were obviously higher than that in its eastern side.In the study area,there were no significant correlations between the concentrations of DFAA and the environmental parameters such as concentrations of chlorophyll a(Chl a),dissolved oxygen(DO),pH,and dissolved inorganic nitrogen(DIN),indicating that the concentrations of DFAA in seawater of the trench are affected by many factors,such as photosynthesis,respiration,temperature,pressure,illumination,and circulation.The dominant DFAA are similar in different water layers of sampling stations,including aspartic acid(Asp),glutamic acid(Glu),glycine(Gly),and serine(Ser).The composition of different amino acids,and the relative abundance of acidic,basic,and neutral amino acids might be related to the sources and consumption of various amino acids.Nine pairs of amino acids in the DFAA showed significantly positive relationship by correlation matrix analysis,suggesting that they might share similar biogeochemical processes.The degradation index(DI)of the DFAA in seawater of the Yap Trench could reflect the degradation,source,and freshness of DFAA in the trench to some extents.This is a preliminary study of amino acids from sea surface to hadal zone in the ocean,more works shall be done in different trenches to reveal their biogeochemical characte ristics in extreme marine environme nts.

SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability

A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively.The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.

A SiC asymmetric cell trench MOSFET with a split gate and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode

A new SiC asymmetric cell trench metal–oxide–semiconductor field effect transistor(MOSFET)with a split gate(SG)and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode(SGHJD-TMOS)is investigated in this article.The SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gateoxide electric field.The integrated p^(+)-poly Si/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device.Numerical analysis results show that,compared with the conventional asymmetric cell trench MOSFET(CA-TMOS),the high-frequency figure of merit(HF-FOM,R_(on,sp)×Q_(gd,sp))is reduced by 92.5%,and the gate-oxide electric field is reduced by 75%.In addition,the forward conduction voltage drop(V_(F))and gate-drain charge(Q_(gd))are reduced from 2.90 V and 63.5μC/cm^(2) in the CA-TMOS to 1.80 V and 26.1μC/cm^(2) in the SGHJD-TMOS,respectively.Compared with the CA-TMOS,the turn-on loss(E_(on)) and turn-off loss(E_(off)) of the SGHJD-TMOS are reduced by 21.1%and 12.2%,respectively.

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.

High performance carrier stored trench bipolar transistor with dual shielding structure

We propose a novel high performance carrier stored trench bipolar transistor(CSTBT)with dual shielding structure(DSS-CSTBT).The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface,in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under it.Compared with the conventional CSTBT(con-CSTBT),the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage(BV),but also well reduces the gate-collector capacitance CGC,gate charge Q_(G),and turn-off loss E_(OFF)of the device.Furthermore,lower turn-on loss E_(ON)and gate drive loss E_(DR)are also obtained.Simulation results show that with the same CS layer doping concentration N_(CS)=1.5×10^(16)cm^(-3),the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate(T_(og2))of 1μm.Moreover,compared with the con-CSTBT,the C_(GC)at V_(CE)of 25 V and miller plateau charge(Q_(GC))for the proposed DSS-CSTBT with T_(og2)of 1μm are reduced by 79.4%and 74.3%,respectively.With the VGEincreases from 0 V to 15 V,the total QGfor the proposed DSS-CSTBT with T_(og2)of 1μm is reduced by 49.5%.As a result,at the same on-state voltage drop(V_(CEON))of 1.55 V,the E_(ON)and E_(OFF)are reduced from 20.3 mJ/cm^(2)and 19.3 mJ/cm^(2)for the con-CSTBT to8.2 mJ/cm^(2)and 9.7 mJ/cm^(2)for the proposed DSS-CSTBT with T_(og2)of 1μm,respectively.The proposed DSS-CSTBT not only significantly improves the trade-off relationship between the V_(CEON)and E_(OFF)but also greatly reduces the E_(ON).