Traditional surface exposure methods,such as trenching and exploratory shaft sinking,have their own limitations and do harm to the environment.Thus,shallow drilling was applied in geological mapping to expose shallow ...Traditional surface exposure methods,such as trenching and exploratory shaft sinking,have their own limitations and do harm to the environment.Thus,shallow drilling was applied in geological mapping to expose shallow orebody and to determine the thickness of top soil layer,and then to illustrate bedrock lithology and geological boundary.It can also help to study geological structures and to reveal the orebody shape,and further to combine with rock core sampling and chemical analysis to develop the systematic method of drilling instead of trenching technology.展开更多
A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant...A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant media to electric fields.The device features variable-K dielectric double trenches and a P-pillar between the trenches(VK DT-P LDMOS).The low-K dielectric layer on the surface increases electric field of it.Adding a variable-K material introduces a new electric field peak to the drift region,so as to optimize electric field inside the device.Introduction of the high-concentration vertical P-pillar between the two trenches effectively increases doping concentration of the drift region and maintains charge balance inside it.Thereby,breakdown voltage(BV)of the device is increased.The double conductive channels provide two current paths that significantly reduce specific on-resistance(Ron,sp).Simulation results demonstrate that a 17-μm-length device can achieve a BV of 554 V and a low on-resistance of 13.12 mΩ·cm^2.The Ron,sp of VK DT-P LDMOS is reduced by 78.9%compared with the conventional structure.展开更多
基金financially supported by the China Geological Survey project (grant no.12120114008101,12120113097200 and 12120113090900)
文摘Traditional surface exposure methods,such as trenching and exploratory shaft sinking,have their own limitations and do harm to the environment.Thus,shallow drilling was applied in geological mapping to expose shallow orebody and to determine the thickness of top soil layer,and then to illustrate bedrock lithology and geological boundary.It can also help to study geological structures and to reveal the orebody shape,and further to combine with rock core sampling and chemical analysis to develop the systematic method of drilling instead of trenching technology.
基金Project supported by the Scientific Research Fund of Hunan Provincial Education Department,China(Grant No.19K001).
文摘A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant media to electric fields.The device features variable-K dielectric double trenches and a P-pillar between the trenches(VK DT-P LDMOS).The low-K dielectric layer on the surface increases electric field of it.Adding a variable-K material introduces a new electric field peak to the drift region,so as to optimize electric field inside the device.Introduction of the high-concentration vertical P-pillar between the two trenches effectively increases doping concentration of the drift region and maintains charge balance inside it.Thereby,breakdown voltage(BV)of the device is increased.The double conductive channels provide two current paths that significantly reduce specific on-resistance(Ron,sp).Simulation results demonstrate that a 17-μm-length device can achieve a BV of 554 V and a low on-resistance of 13.12 mΩ·cm^2.The Ron,sp of VK DT-P LDMOS is reduced by 78.9%compared with the conventional structure.
