Effective Mass of Strong-Coupling Bound Polaron in a Triangular Quantum Well Induced by Rashba Effect

In this paper,on the basis of Huybrechts' strong-coupling polaron model,the Tokuda modified linear-combination operator method and the unitary transformation method are used to study the properties of the strong-coupling bound polaron considering the influence of Rashba effect,which is brought by the spin-orbit (SO) interaction,in the semiconductor triangular quantum well (TQW).Numerical calculation on the RbCl TQW,as the example,isperformed.The expressions for the effective mass of the polaron as a function of the vibration frequency,the velocity,the Coulomb bound potential and the electron areal density are derived.Numerical results show that the total effectivemass of the polaron is composed of three parts.The interactions between the orbit and the spin with different directionshave different effects on the effective mass of the bound polaron.

Properties of polaron in a triangular quantum well induced by the Rashba effect

The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit （SO） interaction, in an semiconductor triangular quantum well （TQW）, have been studied by using the linear combination operator and the unitary transformation methods. We obtain an expression for the ground state energy of the weak-coupling and bound polaron in a TQW as a function of the coupling constant, Coulomb bound potential, and the electron areal density. Our numerical resuks show that the ground state energy of the polaron is composed of four parts, one part is caused by the electrons＇ own energy, the second part is caused by the Rashba effect, the third part occurs because of the Coulomb bound potential, and the last term is induced by the interaction between the electrons and LO phonons. The interactions between the orbit and the spin with different directions have different effects on the ground state energy of the polaron.

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.

Properties of the magnetopolaron in a triangular quantum well

We study the properties of the magnetopolaron in a triangular quantum well within LLP variational method. At different electron-phonon coupling strength, we derive the relations between the ground state energy, the ground state binding energy with the electron areal density and the cyclotron frequency of magnetic field, respectively. Our numerical results show that the ground state energy is an increasing function of the electron areal density and the cyclotron frequency of the magnetic field. However, the ground state binding energy is a decreasing function of those.

Effects of Shannon entropy and electric field on polaron in RbCl triangular quantum dot

In this paper, the time evolution of the quantum mechanical state of a polaron is examined using the Pekar type variational method on the condition of the electric-LO-phonon strong-coupling and polar angle in RbC1 triangular quantum dot. We obtain the eigenenergies, and the eigenfunctions of the ground state, and the first excited state respectively. This system in a quantum dot can be treated as a two-level quantum system qubit and the numerical calculations are performed. The effects of Shannon entropy and electric field on the polaron in the RbC1 triangular quantum dot are also studied.

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings

The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method.We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t.For small t,three dots form a local spin doublet.As t increases,due to the competition between V and t,there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet.When t is absent,the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage.While for sufficient t,the antiferromagnetic spin correlation between dots is enhanced,and the conductance is strongly suppressed for the bonding state is almost doubly occupied.

Charge oscillation and many-body effect in triangular quantum dots

We study the charge oscillation in the triangular quantum dots symmetrically coupled to the leads. A strong charge oscillation is observed even for a very small level difference. We attribute this oscillation behaviour to the many- body effect in the strongly correlated system instead of the physical scenarios based on the mean-field approach in the previous works for the two-level dot. The level difference induces the difference of the occupations between different dots, while the symmetry of the many-body states favours the homogeneous distribution of the charge density on the three dots. The interplay of these two factors results in the charge oscillation.

Discovery of Two-Dimensional Quantum Spin Hall Effect in Triangular Transition-Metal Carbides

Though the quantum spin Hall effect（QSHE） in two-dimensional（2 D） crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum wells. Here we employ a tight-binding model on the basis of d（z^2）, d（xy）, and d（x^2-y^2） orbitals to propose QSHE in the triangular lattice, which are driven by a crossing of electronic bands at the Γ point. Remarkably, 2 D oxidized Mxenes W2 M2 C3 are ideal materials with nontrivial gap of 0.12 eV, facilitating room-temperature observations in experiments. We also find that the nontrivially topological properties of these materials are sensitive to the cooperative effect of the electron correlation and spin-orbit coupling. Due to the feasible exfoliation from its 3 D MAX phase, our work paves a new direction towards realizing QSHE with low dissipation.

Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated,with the In composition in each well layer(WL)along the growth direction progressively increasing for SA and progressively decreasing for SB.The results show that SB exhibits an improved efficiency droop compared with SA.This phenomenon can be explained as follows:owing to the difference in growth pattern of the WL between these two samples,the terminal region of the WL in SB contains fewer In atoms than in SA,and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers.This results in SB having a deeper triangular-shaped potential well in its WL than SA,which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side,thus improving the efficiency droop.Moreover,the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.

Rashba效应影响下三角量子阱中弱耦合极化子的有效质量(英文)

采用改进的线性组合算符和幺正变换相结合的方法,导出了三角量子阱中弱耦合极化子的有效质量。讨论了极化子速度、电声子耦合常数和电子面密度对极化子有效质量的影响。通过对GaAs材料的数值计算结果表明:因为电-声子耦合作用和Rashba效应的存在,发现弱耦合极化子的有效质量由两部分组成,而且弱耦合极化子的有效质量随电声子耦合常数、电子面密度和极化子速度都发生了分裂。

具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED(英文)

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。

三角量子阱中弱耦合极化子声子平均数研究

在三角量子阱中,考虑电子和光学声子的弱耦合,用线性组合算符和幺正变换相结合的方法,导出了三角量子阱中弱耦合极化子的声子平均数表达式,发现了电-声子耦合系数和声子平均数的线性关系.结果表明电声子耦合强度对声子平均数的影响不可忽略,以半导体弱耦合材料为例讨论了两者之间明确的比例性,此结果在实际研究中有一定的指导意义.

三角量子阱中束缚磁极化子的性质（英文）

采用LLP变分法研究了三角量子阱中束缚磁极化子的性质.在不同库伦束缚势下,得到了基态能、基态结合能与磁场回旋频率及电子面密度之间的关系.数值计算结果表明:基态能量随着电子面密度和磁场回旋频率的增加而增加,基态结合能随着电子面密度和磁场回旋频率的增加而减少.

双三角量子阱中线性及非线性折射率的改变(英文)

利用密度矩阵理论和迭代方法,研究了双三角量子阱中线性、非线性及总折射率改变的特性并以典型的GaAs/A lxGa1-xAs材料为例进行了数值计算.重点讨论了入射光强度、双三角量子阱结构参量(量子阱宽)及外加电场对总折射率改变的影响.计算结果表明:由于线性及非线性折射率遵循着不同的变化规律导致了这些参量对总折射率的改变有着极其重要的影响.

GaN异质结场效应管中栅、漏电压对电子气的控制

从自洽求解二维泊松方程和薛定谔方程出发,编制出计算GaN HFET内不同栅、漏电压下沟道能带、电子气密度及量子电容的软件,研究场效应管的电荷控制和DIBL。在异质结沟道阱研究中,改变栅电压算出的电子气密度及量子电容同C-V实验测试结果相吻合,证明求解薛定谔方程是研究异质结场效应管电荷控制的有效方法。考虑外沟道渗透到内沟道的电场梯度以后,算出了场效应管的电子气密度及量子电容。场效应管模拟算得的量子电容同实验测得的栅-源和栅-漏电容相吻合。研究了不同栅、漏电压和电场梯度渗透下的内沟道能带,发现漏电压引起的电场梯度渗透使内沟道能带下弯,导致阈值电压负移。证明阈值电压负移由外沟道渗透到内沟道的电场梯度产生,用自洽能带计算方法可算得漏电压引起的阈值电压负移。提出使用能带剪裁优化设计异质结构来抑制DIBL的新理念。同有限元变分软件的类MESFET模拟相比,新能带计算软件可以求得电荷控制中的量子行为。由此提出编制异质结场效应管模拟软件的设想。

变温量子阱生长技术对蓝光LED发光效率的影响

采用金属有机物化学气相沉积,在2英寸(1英寸=2.54 cm)蓝宝石图形衬底上通过引入变温量子阱生长技术,生长出了具有三角形量子阱(TQW)结构的发光二极管外延片。对比不同生长温度下的样品,得出了最优化的具有三角形量子阱结构外延片的生长条件。通过比较常规恒温量子阱结构和三角形量子阱结构外延片的光致发光光谱,发现TQW结构具有更窄的半峰宽和更高的发光强度。这主要是由于TQW改变了量子阱中的波函数分布,使电子空穴对的复合效率提高。外量子效率从传统的59.38%提高到60.75%,比传统的恒温量子阱提高了1.38%。

三角形势阱中杂质和激子性质的研究

本文用变分法计算了三角形势阱中类氢施主杂质和激子的束缚能，给出了不同势阱深度（决定于ｘ值）下，束缚能随阱宽（２ｂ）变化的规律。与方形势阱比较，三角形势阱中的杂质和激子是有更大的束缚能，是一种有较大应用前途和研究价值的结构。

三角量子阱中磁极化子的Zeeman效应和Rashba效应

采用Pekar变分法研究了三角量子阱中磁极化子的Zeeman效应和Rashba效应,理论推导得到磁极化子基态能量的表达式。结果表明,磁极化子的基态能量不仅是波矢和磁场回旋共振频率的函数,而且还是电子面密度和电子-声子耦合强度的函数;由于晶体结构反演非对称性及磁场的影响,磁极化子能量发生Rashba自旋轨道分裂和Zeeman分裂;在强、弱磁场下,分别讨论了Rashba效应和Zeeman效应在能量分裂中所占的主导地位;由于声子的存在降低了极化子的总能量,使得极化子态比裸电子态更稳定。

GaN异质结场效应管中栅、漏电压对电子气的控制(续)

从自洽求解二维泊松方程和薛定谔方程出发,编制出计算GaN HFET内不同栅、漏电压下沟道能带、电子气密度及量子电容的软件,研究场效应管的电荷控制和DIBL。在异质结沟道阱研究中,改变栅电压算出的电子气密度及量子电容同C-V实验测试结果相吻合,证明求解薛定谔方程是研究异质结场效应管电荷控制的有效方法。考虑外沟道渗透到内沟道的电场梯度以后,算出了场效应管的电子气密度及量子电容。场效应管模拟算得的量子电容同实验测得的栅-源和栅-漏电容相吻合。研究了不同栅、漏电压和电场梯度渗透下的内沟道能带,发现漏电压引起的电场梯度渗透使内沟道能带下弯,导致阈值电压负移。证明阈值电压负移由外沟道渗透到内沟道的电场梯度产生,用自洽能带计算方法可算得漏电压引起的阈值电压负移。提出使用能带剪裁优化设计异质结构来抑制DIBL的新理念。同有限元变分软件的类MESFET模拟相比,新能带计算软件可以求得电荷控制中的量子行为。由此提出编制异质结场效应管模拟软件的设想。

三角量子阱中极化子的Rashba效应（英文）

采用LLP变分法研究了Rashba效应对三角量子阱中极化子性质的影响,得到了极化子基态能量的表达式.在Rashba效应影响下,分别讨论了基态能量与波矢、电子面密度以及电子-声子耦合强度之间的关系.结果表明基态能量是波矢和电子面密度的增函数,是电子-声子耦合强度的减函数.由于Rashba效应的影响,基态能量分裂成两支.