Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction （3J-MM） solar cells are grown on Ge （100） sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray...Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction （3J-MM） solar cells are grown on Ge （100） sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the results show that the high crystal quality of 3J-MM solar cells is obtained with low threading dislocation density of graded buffer （an average value of 6.8× 10^4/cm2）. Benefitting from the optimized bandgap combination, under one sun, AM0 spectrum, 25℃ conditions, the conversion efficiency is achieved about 32%, 5% higher compared with the lattice-matched In0.49Ga0.51P/In0.01Ga0.99As/Ge triple junction （3J-LM） solar cell. Under 1-MeV electron irradiation test, the degradation of the EQE and I-V characteristics of 3J-MM solar cells is at the same level as the 33-LM solar cell. The end-of-life efficiency is -27.1%. Therefore, the metamorphic triple-junction solar cell may be a promising candidate for next-generation space multi-junction solar cells.展开更多
基金Supported by the Grand from Tianjin Little Giant Fund under Grant No 14ZXLJGX00400the Tianjin Science and Technology Support Plan under Grant No 16YFZCGX00030
文摘Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction （3J-MM） solar cells are grown on Ge （100） sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the results show that the high crystal quality of 3J-MM solar cells is obtained with low threading dislocation density of graded buffer （an average value of 6.8× 10^4/cm2）. Benefitting from the optimized bandgap combination, under one sun, AM0 spectrum, 25℃ conditions, the conversion efficiency is achieved about 32%, 5% higher compared with the lattice-matched In0.49Ga0.51P/In0.01Ga0.99As/Ge triple junction （3J-LM） solar cell. Under 1-MeV electron irradiation test, the degradation of the EQE and I-V characteristics of 3J-MM solar cells is at the same level as the 33-LM solar cell. The end-of-life efficiency is -27.1%. Therefore, the metamorphic triple-junction solar cell may be a promising candidate for next-generation space multi-junction solar cells.
