This study tried to explore the ground movement induced by triple stacked tunneling(TST) with different construction sequences. A case study in Tianjin, China was used to investigate the ground movement during the TST...This study tried to explore the ground movement induced by triple stacked tunneling(TST) with different construction sequences. A case study in Tianjin, China was used to investigate the ground movement during the TST(upper tunneling(UT)). For this, a modified Peck formula was proposed to predict the surface settlement induced by TST. Next, three sets of finite element analyses(FEA) were used to compare the effects of construction sequences(i.e. UT, middle tunneling(MT), and lower tunneling(LT)) on vertical and lateral ground displacements. The results of Tianjin case and UT reveal that compared to a Gaussian distribution for a single tunnel, the surface settlement curve of triple stacked tunnels is a bimodal distribution. It seems that the proposed modified Peck formula can effectively predict the surface settlement induced by TST. The results of the three sets of FEA demonstrate that the construction sequence has a significant influence on the ground movement. Among the three construction sequences, the largest lateral displacement is observed in the MT and the smallest one in UT.The existing tunnel has an inhibitory effect on the vertical displacement. The maximum value of the lateral displacement occurs at the depth of the new tunnel in each construction sequence.展开更多
In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
基金financially supported by the Open Project of the State Key Laboratory of Disaster Reduction in Civil Engineering (Grant No. SLDRCE17-01)the National Key Research and Development Program of China (Grant No.2017YFC0805402)the National Natural Science Foundation of China (Grant No. 51808387)。
文摘This study tried to explore the ground movement induced by triple stacked tunneling(TST) with different construction sequences. A case study in Tianjin, China was used to investigate the ground movement during the TST(upper tunneling(UT)). For this, a modified Peck formula was proposed to predict the surface settlement induced by TST. Next, three sets of finite element analyses(FEA) were used to compare the effects of construction sequences(i.e. UT, middle tunneling(MT), and lower tunneling(LT)) on vertical and lateral ground displacements. The results of Tianjin case and UT reveal that compared to a Gaussian distribution for a single tunnel, the surface settlement curve of triple stacked tunnels is a bimodal distribution. It seems that the proposed modified Peck formula can effectively predict the surface settlement induced by TST. The results of the three sets of FEA demonstrate that the construction sequence has a significant influence on the ground movement. Among the three construction sequences, the largest lateral displacement is observed in the MT and the smallest one in UT.The existing tunnel has an inhibitory effect on the vertical displacement. The maximum value of the lateral displacement occurs at the depth of the new tunnel in each construction sequence.
文摘In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.
