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Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline)Aluminum Film 被引量:1
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作者 徐以锋 张寒洁 +3 位作者 陈桥 李海洋 鲍世宁 何丕模 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2006年第2期152-154,共3页
In situ thickness dependent photoluminescence (PL) measurements of tris(8-hydroxyquinoline) aluminum(Alq3) film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showe... In situ thickness dependent photoluminescence (PL) measurements of tris(8-hydroxyquinoline) aluminum(Alq3) film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness. 展开更多
关键词 tris8-hydroxyquinoline aluminum film PHOTOLUMINESCENCE RED-SHIFT
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Electronic property and molecule design for luminescent metal complexes of tris(8-hydroxyquinoline) gallium 被引量:1
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作者 苏忠民 高洪泽 +5 位作者 程红 初蓓 陈丽华 王荣顺 王悦 沈家骢 《Science China Chemistry》 SCIE EI CAS 2000年第6期657-669,共13页
By means of ab initio HF and DFT B3LYP methods, the structure of Gaq3 (q = 8-hydroxyquinoline) was optimized. The frontier molecular orbital characteristics and energy levels of Gaq3 have been analyzed systematically ... By means of ab initio HF and DFT B3LYP methods, the structure of Gaq3 (q = 8-hydroxyquinoline) was optimized. The frontier molecular orbital characteristics and energy levels of Gaq3 have been analyzed systematically in order to study the electronic transition mechanism in Gaq3. Three derivatives of Gaq3 and their polymers were designed and the possibilities that they were employed as luminescent materials were discussed. The regularities and characteristic of energy bands of Gaq3 and its derivatives were also investigated. The results show that the electronic π-π* transitions in Gaq3 are localized on the quinolate ligands. The emission of Gaq3 is due to the electron transitions from a phenoxide donor to a pyridyl acceptor. Two possible electron transfer pathways are presented, one by carbon atoms, and the other via metal cation Ga3+. The derivatives of Gaq3 may possess high luminescence efficiency. 展开更多
关键词 tris(8-hydroxyquinoline) gallium ab INITIO DFT electronic property energy band structure.
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Behavior of 2-ethylhexanoic Acid in Organic Phase of Gallium Extraction
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作者 吴秋芳 王承明 《Rare Metals》 SCIE EI CAS CSCD 1993年第3期181-186,共6页
The rate of batch extraction of gallium from alkaline aqueous solution was studied by adding 2-ethylhexanoic acid in organic phase containing 7-substituted-8-hydroxyquinoline(extractant N601), n-decanol and kerosene.T... The rate of batch extraction of gallium from alkaline aqueous solution was studied by adding 2-ethylhexanoic acid in organic phase containing 7-substituted-8-hydroxyquinoline(extractant N601), n-decanol and kerosene.The extraction of Ga can be considered as a pseudo-homogeneous first-order reac- tion.The neutralization and distribution of organic acid between phases during the extraction were studied. The effect of 2-ethylhexanoic acid on the protonation of N601 is insignificant.The extraction of HCl during the stripping of gallium is mainly dependent on the concentration of aqueous hydrochloric acid and the con- tent of N601.Under the given conditions of temperature and N601 content,the acidity of organic phase is a linear function of the concentration of carboxylic acid in organic phase and the concentration of hydrochloric acid in equilibrium aqueous phase,if the latter is 1.9~5.6 mol/L. 展开更多
关键词 2-ethylhexanoic acid gallium extraction 8-hydroxyquinoline
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有机发光二极管中ADN掺杂ErQ的1.54μm电致发光(英文)
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作者 屈海京 陶利 +1 位作者 王维 冉广照 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2014年第1期31-35,共5页
自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)... 自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移. 展开更多
关键词 近红外发光 有机发光二级管 8-羟基喹啉铒 ERBIUM (111) tris (8-hydroxyquinoline)
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Instability Origin and Improvement Scheme of Facial Alq3 for Blue OLED Application
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作者 DU Jiaren WANG Moran +3 位作者 CHEN Nianke XIE Shengyi YU Hongmei WU Qi 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2016年第3期423-427,共5页
Degradation phenomenon and poor stability of tris(8-hydroxyquinoline) aluminum(Ⅲ)(Alq3)-based organic light-emitting diodes(OLEDs) have attracted much attention. In this paper, we discussed the origin of inst... Degradation phenomenon and poor stability of tris(8-hydroxyquinoline) aluminum(Ⅲ)(Alq3)-based organic light-emitting diodes(OLEDs) have attracted much attention. In this paper, we discussed the origin of instability of the facial Alq3-based blue luminescent OLEDs with the help of first-principles calculation. The results show that environmental humidity seriously affects the luminescence stability of Alq3-based OLEDs. H20 molecules in envi- ronment can be firmly bound to the oxygen atoms of the facial Alq3, which then act as starting points for further de- gradation of Alq3. Moreover, the interactions between facial Alq3 and different cathode metal layers were investigated to explain the experiment phenomenon. A design guideline for diminishing the strong attraction from oxygen atoms can be proposed to protect Alq3 and improve the stability of materials applied in OLEDs. 展开更多
关键词 Organic light-emitting diode(OLED) Facial tris8-hydroxyquinoline aluminum(Ⅲ)(Alq3) First-principle calculation Degradation mechanism
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