Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline)Aluminum Film

In situ thickness dependent photoluminescence （PL） measurements of tris（8-hydroxyquinoline） aluminum（Alq3） film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.

Solid state cathodoluminescence based on tris-(8-hydroxyquinoline) aluminum and its quenching mechanism

A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternating current(AC) voltage is applied to this device,uniform emissions are observed.When the voltage is 50 V,a longer wavelength emission(522 nm) is obtained,but the shorter wavelength emission(465 nm) is dominant when the voltage is 76 V.The origins of these emissions are discussed.The interface formed between SiO2 and tris-(8-hydroquinoline) aluminum(Alq3) of SSCL device was investigated by using X-ray photoelectron spectroscopy(XPS).Analyses of the XPS spectra reveal a deep diffusion of the indium into the interface.On the other hand,the interaction between indium and Alq3 occurs at the interface and results in the formation of a carbon-oxygen-metal(In or Al) complex in the contact region.This effect causes a luminescence quenching in the SSCL device.

Preparation and characterization of a novel strong-fluorescent hydrotalcite-like compound (Al-HTLc)

A novel strong-fluorescent hydrotalcite-like compound (Al-HTLc) was synthesized by coprecipitation. In the sample, the content of aluminum(III) in the layers was decreased to a proper value. The Al3+ ions coordinated with 8-hydroxyquinolines (8-HQ) which were dispersed into the anions in the interlayer region. The sample was characterized by XRD, XPS, FT-IR, TG-DSC, UV-Vis, and fluorescence spec- troscopy; its composition and structure were also determined. The results indicate that the sample can emit fluorescence (487 nm) with a strong fluorescence intensity (4.9×105 (a.u.)). The fluorescent lifetime and fluorescence quantum yield of Al-HTLc were measured to be 21.24 ns and 67%, respectively, higher than those of pure 8-hydroxyquinoline aluminum (Alq3). The result of TG-DSC measurement clearly shows the enhanced thermal stability of Al-HTLc compared with that of MgAl-LDH and pure Alq3. Al-HTLc may be used as a novel luminescent functional material.

Instability Origin and Improvement Scheme of Facial Alq3 for Blue OLED Application

Degradation phenomenon and poor stability of tris（8-hydroxyquinoline） aluminum（Ⅲ）（Alq3）-based organic light-emitting diodes（OLEDs） have attracted much attention. In this paper, we discussed the origin of instability of the facial Alq3-based blue luminescent OLEDs with the help of first-principles calculation. The results show that environmental humidity seriously affects the luminescence stability of Alq3-based OLEDs. H20 molecules in envi- ronment can be firmly bound to the oxygen atoms of the facial Alq3, which then act as starting points for further de- gradation of Alq3. Moreover, the interactions between facial Alq3 and different cathode metal layers were investigated to explain the experiment phenomenon. A design guideline for diminishing the strong attraction from oxygen atoms can be proposed to protect Alq3 and improve the stability of materials applied in OLEDs.