We demonstrate a passively Q-switched Yb：LSO laser based on tungsten disulphide （WS2） saturable absorber op- erating at 1034 nm and 1056 nm simultaneously. The saturable absorbers were fabricated by spin coating me...We demonstrate a passively Q-switched Yb：LSO laser based on tungsten disulphide （WS2） saturable absorber op- erating at 1034 nm and 1056 nm simultaneously. The saturable absorbers were fabricated by spin coating method. With low speed, the WS2 nanoplatelets embedded in polyvinyl alcohol could be coated on a BK7 glass substrate coated with high-refractive-index thin polymer. The shortest pulse width of 1.6 gs with a repetition rate of 76.9 kHz is obtained. As the pump power increases to 9 W, the maximum output power is measured to be 250 mW, corresponding to a single pulse energy of 3.25 μJ. To the best of our knowledge, this is the first time to obtain dual-wavelength Q-switched solid-state laser using few-layer WS2 nanoplatelets.展开更多
Two-dimensional （2D） crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals （vdW） heterostruc...Two-dimensional （2D） crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals （vdW） heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride （hBN） and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio （〉103） between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.展开更多
基金Project supported by the National Scientific Research Project of China(Grant No.61177047)Beijing Municipal Natural Science Foundation+1 种基金China(Grant No.1102005)the Basic Research Foundation of Beijing University of Technology,China(Grant No.X3006111201501)
文摘We demonstrate a passively Q-switched Yb：LSO laser based on tungsten disulphide （WS2） saturable absorber op- erating at 1034 nm and 1056 nm simultaneously. The saturable absorbers were fabricated by spin coating method. With low speed, the WS2 nanoplatelets embedded in polyvinyl alcohol could be coated on a BK7 glass substrate coated with high-refractive-index thin polymer. The shortest pulse width of 1.6 gs with a repetition rate of 76.9 kHz is obtained. As the pump power increases to 9 W, the maximum output power is measured to be 250 mW, corresponding to a single pulse energy of 3.25 μJ. To the best of our knowledge, this is the first time to obtain dual-wavelength Q-switched solid-state laser using few-layer WS2 nanoplatelets.
文摘Two-dimensional （2D） crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals （vdW） heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride （hBN） and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio （〉103） between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.
