A 3rd-order Butterworth active-RC complex band-pass filter was presented for Zig Bee(IEEE802.15.4) transceiver applications. The filter adopted cascaded complex pole stages to realize the 3 MHz bandwidth with a centre...A 3rd-order Butterworth active-RC complex band-pass filter was presented for Zig Bee(IEEE802.15.4) transceiver applications. The filter adopted cascaded complex pole stages to realize the 3 MHz bandwidth with a centre frequency of 2 MHz which was required by the Zig Bee transceiver applications. An automatic frequency tuning scheme was also designed to accommodate the performance deterioration due to the process, voltage and temperature(PVT) variations. The whole filter is implemented in a 0.18 μm standard process and occupies an area of 1.3 mm×0.6 mm. The current dissipation is 1.2 m A from a 1.8 V single power supply. Measurement results show that the image rejection ratio(IRR) of the filter is 24.1 d B with a pass-band ripple less than 0.3 d B. The adjacent channel rejection is 29.8 d B@7 MHz and alternate channel rejection 47.5 d B@12 MHz, respectively.展开更多
This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor ...This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented.展开更多
基金Projects(61334003,61274026) supported by the National Natural Science Foundation of ChinaProject(K5051225006) supported by the Fundamental Research Fund for the Central Universities,China
文摘A 3rd-order Butterworth active-RC complex band-pass filter was presented for Zig Bee(IEEE802.15.4) transceiver applications. The filter adopted cascaded complex pole stages to realize the 3 MHz bandwidth with a centre frequency of 2 MHz which was required by the Zig Bee transceiver applications. An automatic frequency tuning scheme was also designed to accommodate the performance deterioration due to the process, voltage and temperature(PVT) variations. The whole filter is implemented in a 0.18 μm standard process and occupies an area of 1.3 mm×0.6 mm. The current dissipation is 1.2 m A from a 1.8 V single power supply. Measurement results show that the image rejection ratio(IRR) of the filter is 24.1 d B with a pass-band ripple less than 0.3 d B. The adjacent channel rejection is 29.8 d B@7 MHz and alternate channel rejection 47.5 d B@12 MHz, respectively.
文摘This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented.
