To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are locat...To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.展开更多
基金supported by Beijing Natural Science Foundation (No. 4182011)the Development Foundation for Optoelectronics Technology Lab, Ministry of Education (No. PXM 2018_014204_500020)National Natural Science Foundation of China (No. 61751502)
文摘To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.
