We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters fro...We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters from the tunneling magnetoresistance(TMR) vs.field loops and current-driven magnetization switching experiments.Based on the experimental results and device parameters,we further estimate current-driven switching performance of pMTJ including switching time and power,and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations.Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies <1.4 pJ;meanwhile the lower perpendicular magnetic anisotropy(PMA) and damping constant can further reduce the switching time at the studied range of damping constant α <0.1.Additionally,our results demonstrate that the pMTJs with the thermal stability factor■73 can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.展开更多
The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MT...The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.展开更多
The conductance through single-molecule junctions characterized by the break junction techniques consists of the through-space tunneling and through-molecule tunneling conductance, and the existence of through-space t...The conductance through single-molecule junctions characterized by the break junction techniques consists of the through-space tunneling and through-molecule tunneling conductance, and the existence of through-space tunneling between the electrodes makes the quantitative extraction of the intrinsic molecular signals of single-molecule junctions challenging. Here, we established an analytic model to describe the evolution of the conductance of a single molecule in break junction measurements. The experimental data for a series of oligo(aryleneethynylene) derivatives validate the proposed model, which provides a modeling insight into the conductance evolution for the opening process in a "real" break junction experiment. Further modulations revealed that the junction formation probability and rupture distance of the molecular junction, which reflect the junction stability, will significantly influence the amplitude and position of the obtained conductance peak. We further extend our model to a diffusion and a chemical reaction process, for which the simulation results show that the break junction technique offers a quantitative understanding of these time-dependent systems, suggesting the potential of break junction techniques in the quantitative characterization of physical and chemical processes at the single-molecule scale.展开更多
基金Project supported by State Grid Corporation of China under the 2018 Science and Technology Project of State Grid Corporation:Research on electromagnetic measurement technology based on EIT and TMR(Grant No.JL71-18-007)。
文摘We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters from the tunneling magnetoresistance(TMR) vs.field loops and current-driven magnetization switching experiments.Based on the experimental results and device parameters,we further estimate current-driven switching performance of pMTJ including switching time and power,and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations.Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies <1.4 pJ;meanwhile the lower perpendicular magnetic anisotropy(PMA) and damping constant can further reduce the switching time at the studied range of damping constant α <0.1.Additionally,our results demonstrate that the pMTJs with the thermal stability factor■73 can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.62004223)the Science and Technology Innovation Program of Hunan Province,China(Grant No.2022RC1094)+1 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(Grant No.KF202012)the Hunan Provincial Science Innovation Project for Postgraduate,China(Grant No.CX20210086).
文摘The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.
基金supported by the National Key R&D Project of China(2017YFA0204902)the National Natural Science Foundation of China(21722305,21673195,21703188,21790360)the Youth Innovation Promotion Association CAS(2015024)
文摘The conductance through single-molecule junctions characterized by the break junction techniques consists of the through-space tunneling and through-molecule tunneling conductance, and the existence of through-space tunneling between the electrodes makes the quantitative extraction of the intrinsic molecular signals of single-molecule junctions challenging. Here, we established an analytic model to describe the evolution of the conductance of a single molecule in break junction measurements. The experimental data for a series of oligo(aryleneethynylene) derivatives validate the proposed model, which provides a modeling insight into the conductance evolution for the opening process in a "real" break junction experiment. Further modulations revealed that the junction formation probability and rupture distance of the molecular junction, which reflect the junction stability, will significantly influence the amplitude and position of the obtained conductance peak. We further extend our model to a diffusion and a chemical reaction process, for which the simulation results show that the break junction technique offers a quantitative understanding of these time-dependent systems, suggesting the potential of break junction techniques in the quantitative characterization of physical and chemical processes at the single-molecule scale.
