基于TMR器件的弱磁传感系统设计

小型化高性能磁传感系统在磁异探测、航空航天、生物磁测量等领域具有重要的应用前景。传统磁传感系统因体积大、功耗高等原因难以搭载于无人机平台,而隧道磁电阻(TMR)器件是构建小型磁传感系统的理想选择。该文在分析TMR器件磁滞特性及其灵敏度与工作点关系的基础上,提出一种通过稳定TMR器件工作点来实现磁滞补偿的方法,通过建立磁场反馈补偿回路并采用自适应磁场补偿算法,大幅提升磁传感系统的性能。测试结果表明所设计的磁传感系统的测量范围为-10000~10000 nT,线性度为0.016%,噪声水平为0.39 nT/√Hz@1 Hz,带宽为60 Hz,可以满足水下磁异目标探测等应用需求。

基于多TMR的涡流无损顶锤裂纹检测系统设计

针对碳化钨顶锤的表面及近表面裂纹的快速精准无损检测需求,开发了一套基于多个隧道磁阻的涡流裂纹探伤检测系统。系统设计了电源供电电路、频率可调节的信号发生电路、功率放大电路、检测探头,能检测出微缺陷引起的叠加磁场的变化。有限元仿真与顶锤检测实验的对比分析表明该检测系统可以准确识别顶锤的细微裂纹损伤,实现了基于涡流原理的顶锤钨合金试块近表面微小裂纹的检测。

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

基于改进神经网络的TMR磁传感系统温漂校准方法

由于环境以及自身元件的发热等因素的影响,TMR磁传感系统实际工作温度会发生一定程度的波动。随着温度的升高或降低,TMR磁传感系统的实际输出会产生一定的误差,出现输出的温度漂移现象。为了抑制温度漂移对TMR磁传感系统的影响,采用反向传播(BP)神经网络对系统输出的温度漂移现象进行补偿,并利用遗传算法(GA)对BP神经网络进行优化,通过对补偿前后数据的对比,使TMR磁传感系统的输出温漂大幅下降了2个量级,得到了较为理想的效果,提升了TMR磁传感系统的性能和可靠性。

基于最小二乘法的三维TMR数字罗盘系统设计

针对市面上现有的三维数字罗盘在进行地磁场检测时极易受到外界磁场的干扰进而导致测量精度低的问题,设计了一款基于最小二乘法的三维TMR(隧道磁阻效应)数字罗盘系统。对其在现实中的误差特点开展研究,在由椭球拟合法处理校正后,运用了最小二乘法开展误差补偿,补偿前其方位角精度为4.18°,补偿后其方位角精度为0.46°,结果显而易见,在精度方面拔高了一个数量级,降低了三维数字罗盘系统的方位角误差。实验结果显示,最小二乘法可以极大地提高三维数字罗盘系统的精度,该方法具有较高的工程应用价值。

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

Using the density functional theory and the nonequilibrium Green＇s function method, we studied the finite-bias quan- tum transport in a Cr/graphene/Cr magnetotunnel junction （MTJ） constructed by a single graphene layer sandwiched be- tween two semi-infinite Cr（111 ） electrodes. We found that the tunneling magnetoresistance （TMR） ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically.The results reveal a large tunneling magnetoresistance up to 3230%by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet.The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations.The key role of the organic ferromagnet in generating the large magnetoresistance is explored,where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves.The effects of intrinsic interactions in the organic ferromagnet including electron–lattice interaction and spin coupling with radicals on the magnetoresistance are discussed.This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

基于E-J模型的超导/TMR复合磁传感器设计与实现

超导/隧道磁电阻(TMR)复合磁传感器具有fT级磁场测量能力,在弱磁探测领域展现出巨大应用潜力。本文基于超导材料的E-J幂指数模型,建立了超导磁放大器的COMSOL有限元仿真方法,并利用该方法研究了超导磁放大器的放大倍数随窄区宽度的变化规律。在此基础上,设计并制备了一种双窄区超导/TMR复合磁传感器,经测试结果表明:该复合磁传感器的最大磁场放大倍数达到97,且其双窄区比值与仿真结果相近,本文所提方法可行。

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.

SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlO_x/Fe-O FILMS

Fe-O/AlO_x/Fe-O tunnel junctions were prepared by reactive magnetronsputtering under mixed working gas Ar+2 percent O_2. The insulating AlO_x layer of 1-2nm thicknesswas sputtered directly from A1_2O_3 target. Electrode layers were made of 80at. percent iron and20at. percent oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473K at thepressure of 3 X 10^(-4) Pa for an hour shows disparate crystalline grain structure, lower electricalresistance and coercivity compared to the as-deposited top electrode. Only crystalline structrureof alpha-Fe is observed in both electrodes. Large tunnel magnetoresistance in large Fe-O/AlO_x/Fe-Ojunctions of 1cm^2 is observed at room temperature and the I-V characteristic curve of the junctionshows that the barrier of the junction is of high quality.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co_(2)MnSi Electrodes

Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications.By performing extensive density functional theory calculations combined with the nonequilibrium Green’s function method,we explore the spin-dependent transport properties of a magnetic tunnel junction,in which a non-polar SrTiO_(3) barrier layer is sandwiched between two Heusler alloy Co_(2)MnSi electrodes.Theoretical results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization configuration.The transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration,resulting in a huge tunneling magnetoresistance(i.e.>10^(6)),which originates from the coherent spin-polarized tunneling,due to the half-metallic nature of Co_(2)MnSi electrodes and the significant spin-polarization of the interfacial Ti_(3)d orbital.

Tunneling Conductance and Magnetoresistance in Ferromagnet／Ferromagnet／d-WaveSuperconductor Double Tunnel Junctions

The tunneling conductance and tunneling magnetoresistance(TMR)are investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave superconductor(FM/I/FM/I/d-wave SC)structures by applying an extended Blonder-Tinkham-Klapwijk(BTK)approach.We study the effects of the exchange splitting in the FM, the magnetic impurity scattering in the thin insulator interface of FM/I/FM,and noncollinear magnetizations in adja- cent magnetic layers on the TMR.It is shown(1)that the tunneling conductance and TMR exhibit amplitude-varying oscillating behavior with exchange splitting,(2)that with the presence of spin-flip scattering in insulator interface of FM/I/FM,the TMR can be dramatically enhanced,and(3)that the TMR depends strongly on the angle between the magnetization of two FMs.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient

We study the coutrol of gate voltage over the magnetization of a single-molecule magnet （SMM） weakly coupled to a ferromagnetic and a normal metal electrode in the presence of the temperature gradient between two electrodes. It is demonstrated that the SMM＇s magnetization can change periodically with periodic gate voltage due to the driving oI the temperature gradient. Under an appropriate matching of the electrode polarization, the temperature difference and the pulse width of gate voltage, the SMM＇s magnetization can be completely reversed in a period of gate voltage. The corresponding flipping time can be controlled by the system parameters. In addition, we also investigate the tunneling anisotropic magnetoresistance （TAMFt） of the device in the steady state when the ferromagnetic electrode is noncollinear with the easy axis of the SMM, and show the jump characteristic of the TAMR.

基于TMR传感器阵列的微电网过载电流检测方法

过载电流状态检测是微电网安全稳定运行的重要内容,针对单个传感器的测试误差问题以及测试过程中外界磁场的干扰问题,采用高灵敏度的TMR传感器构成传感阵列,减小微电网过载电流检测的测试误差.通过Ansoft Maxwell分析TMR传感器的安装位置,然后对TMR传感器阵列的模型进行了分析;最后通过测试实验,验证了所提测试方案的可行性.实验结果表明:TMR传感器阵列可以完成过载电流的检测,相比于单个TMR传感器,使用TMR传感器阵列可以将过载电流的峰值误差减少到0.12%.这对于微电网运行的状态监测提供了强有力的数据支撑.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

磁传感器检测磁性纳米粒子方法研究

磁性纳米粒子表面修饰后,可以与核酸、蛋白质、重金属离子等物质结合,通过检测磁粒子的磁响应信号,可以得到待测物的含量。基于电磁学理论与隧道磁阻效应,设计了一种用于检测不同质量磁性纳米粒子磁信号的测试平台。利用COMSOL Multiphysics有限元分析软件优化了磁场产生装置,改进后的线圈在通入直流电流不变的情况下,能将磁场的均匀区域扩大1.5倍,数值提高2 Gs。新型三匝线圈的实验结果与仿真结果相比最大误差为6.25%。选择了适合常规样品的磁场检测装置,分析了各类传感器的最优测量方向,测得了磁粒子质量与输出信号的关系曲线。实验结果表明:随着悬浮液中磁粒子含量的增加,隧道磁阻(TMR)传感器的输出信号也呈上升趋势,两者为线性正比关系。

三芯电缆非侵入式多导体电流测量研究

针对当前的三芯电缆电流测量直接使用传感信号进行多导体位置和电流的测量,传感器数量未确定,使用数量多不仅使多导体电流测量系统没有确定的传感器使用策略,而且导致测量误差大的问题,本文分析给出了非侵入测量三芯电缆电流所需的最少且最优的磁传感器数量,提出了非侵入式多导体电流测量原理。根据三芯电缆电流传导环电缆磁场分布关系,使用6个磁传感器环绕电缆分布,由每个传感信号获取2个特征值的最优估计,建立12个独立方程,实现电缆中导体位置的检测和导体电流的测量。搭建了三芯电缆电流测量平台,进行了测试验证。测试结果表明,该方法测量15~100 A的三相电流的振幅最大误差小于1.00%,相角误差小于2°,导体位置误差小于0.2 mm。提出的测量原理极大减小了多芯电缆电流的在线测量误差,且测量系统拥有更简单的结构和精准的位置及电流波形测量结果。