Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

Using the density functional theory and the nonequilibrium Green＇s function method, we studied the finite-bias quan- tum transport in a Cr/graphene/Cr magnetotunnel junction （MTJ） constructed by a single graphene layer sandwiched be- tween two semi-infinite Cr（111 ） electrodes. We found that the tunneling magnetoresistance （TMR） ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically.The results reveal a large tunneling magnetoresistance up to 3230%by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet.The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations.The key role of the organic ferromagnet in generating the large magnetoresistance is explored,where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves.The effects of intrinsic interactions in the organic ferromagnet including electron–lattice interaction and spin coupling with radicals on the magnetoresistance are discussed.This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.

SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlO_x/Fe-O FILMS

Fe-O/AlO_x/Fe-O tunnel junctions were prepared by reactive magnetronsputtering under mixed working gas Ar+2 percent O_2. The insulating AlO_x layer of 1-2nm thicknesswas sputtered directly from A1_2O_3 target. Electrode layers were made of 80at. percent iron and20at. percent oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473K at thepressure of 3 X 10^(-4) Pa for an hour shows disparate crystalline grain structure, lower electricalresistance and coercivity compared to the as-deposited top electrode. Only crystalline structrureof alpha-Fe is observed in both electrodes. Large tunnel magnetoresistance in large Fe-O/AlO_x/Fe-Ojunctions of 1cm^2 is observed at room temperature and the I-V characteristic curve of the junctionshows that the barrier of the junction is of high quality.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient

We study the coutrol of gate voltage over the magnetization of a single-molecule magnet （SMM） weakly coupled to a ferromagnetic and a normal metal electrode in the presence of the temperature gradient between two electrodes. It is demonstrated that the SMM＇s magnetization can change periodically with periodic gate voltage due to the driving oI the temperature gradient. Under an appropriate matching of the electrode polarization, the temperature difference and the pulse width of gate voltage, the SMM＇s magnetization can be completely reversed in a period of gate voltage. The corresponding flipping time can be controlled by the system parameters. In addition, we also investigate the tunneling anisotropic magnetoresistance （TAMFt） of the device in the steady state when the ferromagnetic electrode is noncollinear with the easy axis of the SMM, and show the jump characteristic of the TAMR.

Tunneling Conductance and Magnetoresistance in Ferromagnet／Ferromagnet／d-WaveSuperconductor Double Tunnel Junctions

The tunneling conductance and tunneling magnetoresistance (TMR) are investigated inferromagnet/insulator/ferromagnet/insulator/d-wave superconductor (FM/I/FM/I/d-wave SC) structures by applyingan extended Blonder Tinkham-Klapwijk (BTK) approach. We study the effects of the exchange splitting in the FM,the magnetic impurity scattering in the thin insulator interface of FM/1/FM, and noncollinear magnetizations in adja-cent magnetic layers on the TMR. It is shown (1) that the tunneling conductance and TMR exhibit amplitude-varyingoscillating behavior with exchange splitting, (2) that with the presence of spin-flip scattering in insulator interface of FM/I/FM, the TMR can be dramatically enhanced, and (3) that the TMR depends strongly on the angle between themagnetization of two FMs.

基于TMR器件的弱磁传感系统设计

小型化高性能磁传感系统在磁异探测、航空航天、生物磁测量等领域具有重要的应用前景。传统磁传感系统因体积大、功耗高等原因难以搭载于无人机平台,而隧道磁电阻(TMR)器件是构建小型磁传感系统的理想选择。该文在分析TMR器件磁滞特性及其灵敏度与工作点关系的基础上,提出一种通过稳定TMR器件工作点来实现磁滞补偿的方法,通过建立磁场反馈补偿回路并采用自适应磁场补偿算法,大幅提升磁传感系统的性能。测试结果表明所设计的磁传感系统的测量范围为-10000~10000 nT,线性度为0.016%,噪声水平为0.39 nT/√Hz@1 Hz,带宽为60 Hz,可以满足水下磁异目标探测等应用需求。

基于多TMR的涡流无损顶锤裂纹检测系统设计

针对碳化钨顶锤的表面及近表面裂纹的快速精准无损检测需求,开发了一套基于多个隧道磁阻的涡流裂纹探伤检测系统。系统设计了电源供电电路、频率可调节的信号发生电路、功率放大电路、检测探头,能检测出微缺陷引起的叠加磁场的变化。有限元仿真与顶锤检测实验的对比分析表明该检测系统可以准确识别顶锤的细微裂纹损伤,实现了基于涡流原理的顶锤钨合金试块近表面微小裂纹的检测。

An Explicit Function Expression for dc Bias and Temperature Dependence of Magnetoresistances in Magnetic Tunnel Junctions

An explicit function expression for the bias voltage or/and temperature dependences of tunnel magnetoresistance ratio and resistances were obtained with a unique set of intrinsic parameters. Two of these intrinsic parameters are the Curie temperature TC and the density of state (DOS) for itinerant majority and minority electrons ξ(ρM/ρm), which are the eigen parameters of ferromagnetic electrodes. Others are the spin-dependent matrix-element ratio (i.e., |Td|2/|TJ|2 ) and the anisotropic-wavelength-cutoff energy ECγ of spin-wave spectrum in magnetic tunnel junction (MTJ), which are the structure parameters of an MTJ. These intrinsic parameters can be predetermined using the experimental measurement or, in principle, using the first-principle calculation method for an MTJ with the three key layers of FM/I/FM. Furthermore, a series of experimental data for an MTJ, for example, a spin-valve-type MTJ of Ta (5 nm)/Ni79Fe21(25 nm)/lr22Mn78(12 nm)/Co75Fe25(4 nm)/AI(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta (5 nm) in this work, can be self-consistently evaluated and explained using such concise explicit function formulations.

Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer Biittiker formalism and taking into account the spin-orbit coupling （SOC）. It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier （FB） and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

Visualization of tunnel magnetoresistance effect in single manganite nanowires

We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.

Negative tunnel magnetoresistance in a quantum dot induced by interplay of a Majorana fermion and thermal-driven ferromagnetic leads

We investigate the spin-related currents and tunnel magnetoresistance through a quantum dot,which is side-coupled with a Majorana fermion zero mode and two thermal-driven ferromagnetic electrodes.It is found that the interplay of Majorana fermion and electrodes'spin polarization can induce a nonlinear thermal-bias spin current.This interplay also decreases the total magnitude of spin or charge current,in either parallel or antiparallel configuration.In addition,a thermal-driven negative tunnel magnetoresistance is found,which is an unique feature to characterize Majorana fermion.With large temperature difference,a step phenomenon is observed in gate tuned spin-up current.When the coupling between quantum dot and topological superconductor is strong enough,this step will evolve into a linear relation,revealing Majorana fermion's robustness.

基于改进神经网络的TMR磁传感系统温漂校准方法

由于环境以及自身元件的发热等因素的影响,TMR磁传感系统实际工作温度会发生一定程度的波动。随着温度的升高或降低,TMR磁传感系统的实际输出会产生一定的误差,出现输出的温度漂移现象。为了抑制温度漂移对TMR磁传感系统的影响,采用反向传播(BP)神经网络对系统输出的温度漂移现象进行补偿,并利用遗传算法(GA)对BP神经网络进行优化,通过对补偿前后数据的对比,使TMR磁传感系统的输出温漂大幅下降了2个量级,得到了较为理想的效果,提升了TMR磁传感系统的性能和可靠性。

基于最小二乘法的三维TMR数字罗盘系统设计

针对市面上现有的三维数字罗盘在进行地磁场检测时极易受到外界磁场的干扰进而导致测量精度低的问题,设计了一款基于最小二乘法的三维TMR(隧道磁阻效应)数字罗盘系统。对其在现实中的误差特点开展研究,在由椭球拟合法处理校正后,运用了最小二乘法开展误差补偿,补偿前其方位角精度为4.18°,补偿后其方位角精度为0.46°,结果显而易见,在精度方面拔高了一个数量级,降低了三维数字罗盘系统的方位角误差。实验结果显示,最小二乘法可以极大地提高三维数字罗盘系统的精度,该方法具有较高的工程应用价值。

Two-dimensional XSe2（X = Mn, V） based magnetic tunneling junctions with high Curie temperature

Two-dimensional(2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research,magnetic tunneling junctions(MTJs) based on XSe2(X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance(TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias.The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2(X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.