Coordinate control strategy for stability operation of offshore wind farm integrated with Diode-rectifier HVDC

Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the application of conventional control strategies for stability operation face several challenges due to the uncontrollability of the DR.In this paper,a coordinated control strategy of offshore wind farms using the DR-HVDC transmission technology to connect with the onshore grid,is investigated.A novel coordinated control strategy for DR-HVDC is proposed based on the analysis of the DC current control ability of the full-bridge-based modular multilevel converter(FB-MMC)at the onshore station and the input and output characteristics of the diode rectifier at the offshore.Considering the characteristics of operation stability and decoupling between reactive power and active power,a simplified design based on double-loop droop control for offshore AC voltage is proposed after power flow and voltage–current(I–V)characteristics of the offshore wind farm being analyzed.Furthermore,the impact of onshore AC fault to offshore wind farm is analyzed,and a fast fault detection and protection strategy without relying on communication is proposed.Case studies carried out by PSCAD/EMTDC verify the effectiveness of the proposed control strategy for the start up,power fluctuation,and onshore and offshore fault conditions.

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Test Research on the Treatment of Rectifier Diode Production Wastewater from a Company

Rectifier diode production wastewater that contains acid,alkali and heavy metal ions in a company was treated by using neutralization/coagulation sedimentation method.Firstly,pH of wastewater was adjusted via neutralization reaction,and then heavy metal ions(Cu^(2+),Cr^(2+)and Pb^(2+))were removed by adding coagulant PAC and flocculant PAM.Different acid-alkali neutralization reactions were conducted under the process condition to analyze and compare their neutralization effects.The results showed that removal rates of heavy metal ions were high after coagulation test:Cu^(2+),Pb^(2+)and Cr^(2+)contents dropped from 13.230,0.032,and 1.720mg/L to 0.3,0.001,and 0.24mg/L;besides,total iron,total manganese and turbidity all had very good removal effects.

Improved Full Bridge Converter with Low Peak Voltage on Rectifier Diodes

To suppress peak voltage on rectifier diodes in a full bridge( FB) converter,the mechanism of peak voltage was analyzed and an improved FB converter was proposed. One reason for peak voltage is the resonance of the transformer's leakage inductance and the rectifier diodes' junction capacitances. The other reason is that the fast reverse recovery current of the rectifier diodes flows through the transformer's leakage inductance. An H bridge composed of four diodes,an auxiliary inductance, and a clamping winding were adopted in the proposed converter,and peak voltage was suppressed by varying the equivalent inductance, principally in different operating modes. Experimental results demonstrate that the peak voltage of rectifier diodes decreases by 43%,the auxiliary circuit does not lead to additional loss, and the rising rate, resonant frequency,and amplitude of the rectifier diodes' voltage decrease.Peak voltage and electromagnetic interference( EMI) of rectifier diodes are suppressed.

Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

Application of Single-to-Single Phase Matrix Conversion in Conventional Rectifier-Inverter

The principle of single to single phase matrix electric power conversioin is further studied and the conversioin switch function is introduced into conventional rectifier inverter, thus a general character of the two conversion techniques is discovered. It is characteristic of the switch functiion to follow mains voltage distortion and mains frequency drift. By utilizing the merit, unidirectional switch duty rations of the inverter follow the variation of DC link voltage automatically, thus the size of DC link electrolytic capacitor can be reduced considerably, bringing about improved mains side power factor. Corresponding topologies and theoretical and theoretical derivations are given, and so are the simulation results, based on which it is confirmed that the single to single phase matrix conversion technique is potentially useful in large scale production, and the introduction of switch function can yield good economic returns.

Facet Reflection Coefficient of Phase-lockedDiode Laser Array in an External Cavity

A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.

Three-Phase Back PWM-PFC Rectifier

A new 3-phase back (or current-source-type) PWM-PFC rectifier is proposed in this paper.The necessity,the advantages and disadvantages of this type PWM rectifier are discussed first.Then,the new power circuit topology and the modulation scheme to eliminate or mitigate the disadvantages and obtain further new advantages of the buck PWM rectifier are introduced.The features of the new rectifier,i.e.,high efficiency,simple modulation process,robustness of the line-current modulation for distortion of the utility voltages and DC current ripples have been confirmed through experimental results obtained from a 12kW prototype.

Improved Clamped Diode Based Z-Source Network for Three Phase Induction Motor

The 3Φinduction motor is a broadly used electric machine in industrial applications,which plays a vital role in industries because of having plenty of beneficial impacts like low cost and easiness but the problems like decrease in motor speed due to load,high consumption of current and high ripple occurrence of ripples have reduced its preferences.The ultimate objective of this study is to control change in motor speed due to load variations.An improved Trans Z Source Inverter(ΓZSI)with a clamping diode is employed to maintain constant input voltage,reduce ripples and voltage overshoot.To operate induction motor at rated speed,different controllers are used.The conventional Proportional-Inte-gral(PI)controller suffers from high settling time and maximum peak overshoot.To overcome these limitations,Fractional Order Proportional Integral Derivative(FOPID)controller optimized by Gray Wolf Optimization(GWO)technique is employed to provide better performance by eliminating maximum peak overshoot pro-blems.The proposed speed controller provides good dynamic response and controls the induction motor more effectively.The complete setup is implemented in MATLAB Simulation to verify the simulation results.The proposed approach provides optimal performance with high torque and speed along with less steady state error.

Rectifier Configurations Based on Harmonic Injecting and Counteracting Principle

On the basis of detailed analysis of a novel harmonic counteracting method which can be used to effectively compensate the supply line harmonic currents of a passive single phase diode bridge rectifier, this paper presents two simpler single phase diode bridge rectifier configurations and their alternatives which can achieve low supply line current THD(total harmonic distortion) too. Moreover, this paper also proposes a few passive hamonic counteracting networks for multi single phase rectifiers which are connected in parallel.

Lateralβ-Ga_(2)O_(3)Schottky barrier diode fabricated on(-201)single crystal substrate and its temperature-dependent current-voltage characteristics

Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.

Design of a novel high holding voltage LVTSCR with embedded clamping diode

In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+implant region and the n+bridge, which helps to improve the holding voltage and decrease the snapback region.The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse(TLP)tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5–7 V.

High-Efficiency Rectifier for Wireless Energy Harvesting Based on Double Branch Structure

A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to the nonlinear characteristics of the diodes, a new band-stop structure is introduced to reduce the imaginary part impedance and suppress harmonics. A novel structure with double branches and an optimized λ/4 microstrip line is proposed to realize the power division ratio adjustment by the input power automatically. The proposed two branches can satisfy the two cases with input power of-20 dBm to 0 dBm and 0 dBm to 15 dBm, respectively. Here, dBm = 10 log(P mW), and P represents power. An impedance compression network(ICN) is correspondingly designed to maintain the input impedance stability over the wide input power range. A rectifier that works at 2.45 GHz is implemented. The measured results show that the highest efficiency can reach 51.5% at the output power of 0 dBm and higher than 40% at the input power of-5 dBm to 12 dBm.

High performance lateral Schottky diodes based on quasi-degenerated Ga_2O_3

Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm^2,and an ultra-high on/off ratio of 2.1 ×10^(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm^2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

Characterization of Self-driven Cascode-Configuration Synchronous Rectifiers

This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.

A Comparison Study of Rectifier Designs for 2.45 GHz EM Energy Harvesting

Energy harvesting is a rapidly growing area in many scientific and engineering-related fields due to the demand for many applications. This paper focuses on the design and simulation of the voltage doubler rectifier circuit at 2.45 GHz operating frequency. The design of a rectifier is optimized based on the use of Schottky diode HSMS 286 B due to its low forward voltage at this frequency. 2 stages of the Schottky diode voltage doublers circuit are designed and simulated in this paper. The shunt capacitor and optimal load resistance are also introduced in the course to reduce signal loss. A multi-stage rectifier is used to produce maximum power conversion from AC to DC. The simulated results present that the maximum output voltage of 6.651 V with an input power of 25 dBm is produced, which presents a maximum power conversion efficiency of 73.13%, which applicable in small device applications.

Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes

An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.

The First Principle Study on C-doped Armchair Boron Nitride Nanoribbon Rectifier

The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with carbon atoms in one of the electrodes acts as a high performance nanoribbon rectifier. It is interesting to find that there exists a particular bias-polarity-dependent matching band between two electrodes,leading to a similar current-voltage（I-V） behavior as conventional P-N diodes. The I-V behavior presents a linear positive-bias I-V characteristic,an absolutely negligible leakage current,and a stable rectifying property under a large bias region. The results suggest that C doping might be an effective way to raise ABNNRs devices＇ rectifying performance.

Power Factor Correction Rectifier with a Variable Frequency Voltage Source in Vehicular Application

This paper presents a PFCVF (Power Factor Correction) rectifier that uses a variable frequency source for alternators for electric and hybrid vehicles application. In such application, the frequency of the signal in the alternator changes according to the vehicle speed, more over the loading effect on the alternator introduces harmonic currents and increases the alternator apparent power requirements. To overcome these problems and aiming more stability and better design of the alternator, a new third harmonic injection technique is proposed. This technique allows to preserve a good THD (Total Harmonic Distortion) of the input source at any frequency and to decrease losses in semiconductors switches, thereby allowing more stability and reducing the apparent power requirements. A comparative study between the standard and the new technique is made and highlights the effectiveness of the new design. A detailed analysis of the proposed topology is presented and simulations as well as experimental results are shown.

A 27 GHz,simple 2-bit 1×8 phased array

This study demonstrates a simple 2-bit phased array operating at 27 GHz that supports one-dimensional beam scanning with left-handed circular polarization(LHCP).The antenna is constructed using a compact four-layer printed circuit board(PCB)structure,consisting of a 90°phase shifter layer with microstrip structures,a ground(GND)layer,a direct current(DC)control layer,and a circularly polarized annular radiation patch layer with 1-bit phase shifting.Based on the proposed unit structure,a 1×8 array with half-wavelength inter-element spacing was designed and validated.Experimental results show that the array achieves a peak gain of 10.23 dBi and is capable of beam scanning within±50°.