High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dim...High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.展开更多
A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Base...A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Based on an oxygen vacancy scramble effect,the zero-dimensional anatase TiO2 quantum dots,surrounding on two-dimensional conductive Ti3C2TX sheets,are in situ rooted on three-dimensional SnO2 nanoparticles,constructing nanoscale TiO2/SnO2 heterojunctions.The fabrication is implemented in a controlled lowtemperature anneal method in air and then in N2 atmospheres.With the optimal MXene content,the optical property,the crystallinity of perovskite layer,and internal interfaces are all facilitated,contributing more amount of carrier with effective and rapid transferring in device.The champion power conversion efficiency of resultant perovskite solar cells achieves 19.14%,yet that of counterpart is just 16.83%.In addition,it can also maintain almost 85%of its initial performance for more than 45 days in 30–40%humidity air;comparatively,the counterpart declines to just below 75%of its initial performance.展开更多
Herein,Co/CoO heterojunction nanoparticles(NPs)rich in oxygen vacancies embedded in mesoporous walls of nitrogen-doped hollow carbon nanoboxes coupled with nitrogen-doped carbon nanotubes(P-Co/CoOV@NHCNB@NCNT)are well...Herein,Co/CoO heterojunction nanoparticles(NPs)rich in oxygen vacancies embedded in mesoporous walls of nitrogen-doped hollow carbon nanoboxes coupled with nitrogen-doped carbon nanotubes(P-Co/CoOV@NHCNB@NCNT)are well designed through zeolite-imidazole framework(ZIF-67)carbonization,chemical vapor deposition,and O_(2) plasma treatment.As a result,the threedimensional NHCNBs coupled with NCNTs and unique heterojunction with rich oxygen vacancies reduce the charge transport resistance and accelerate the catalytic reaction rate of the P-Co/CoOV@NHCNB@NCNT,and they display exceedingly good electrocatalytic performance for oxygen reduction reaction(ORR,halfwave potential[EORR,1/2=0.855 V vs.reversible hydrogen electrode])and oxygen evolution reaction(OER,overpotential(η_(OER,10)=377mV@10mA cm^(−2)),which exceeds that of the commercial Pt/C+RuO_(2) and most of the formerly reported electrocatalysts.Impressively,both the aqueous and flexible foldable all-solid-state rechargeable zinc-air batteries(ZABs)assembled with the P-Co/CoOV@NHCNB@NCNT catalyst reveal a large maximum power density and outstanding long-term cycling stability.First-principles density functional theory calculations show that the formation of heterojunctions and oxygen vacancies enhances conductivity,reduces reaction energy barriers,and accelerates reaction kinetics rates.This work opens up a new avenue for the facile construction of highly active,structurally stable,and cost-effective bifunctional catalysts for ZABs.展开更多
This paper presents calculating results of the two-dimensional electron gas （2DEG） distributions in AlGaN/GaN material system by solving the Schroedinger and Poisson equations self-consistently. Due to high 2DEG den...This paper presents calculating results of the two-dimensional electron gas （2DEG） distributions in AlGaN/GaN material system by solving the Schroedinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schroedinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.展开更多
Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investi...Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investigation of large-scale chemical vapor deposition(CVD)-grown monolayer MoS2 and exfoliated few-layer GaS heterojunctions.As revealed by photoluminescence(PL) characterization, the as-fabricated heterojunctions demonstrated edge interaction between the two layers.The heterojunction was sensitive to annealing and showed increased interaction upon annealing at 300℃ under vacuum conditions, which led to changes in both the emission peak position and intensity resulting from the strong coupling interaction between the two layers.Low-temperature PL measurements further confirmed the strong coupling interaction.In addition, defect-related GaS luminescence was observed in our few-layer GaS, and the PL mapping provided evidence of edge interaction coupling between the two layers.These findings are interesting and provide the basis for creating new material systems with rich functionalities and novel physical effects.展开更多
In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
As one of the most important semiconductor materials, silicon （Si） has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p-n junction ...As one of the most important semiconductor materials, silicon （Si） has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p-n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional （2D） layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.展开更多
Van der Waals （vdW） heterojunctions based on two-dimensional （2D） atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized w...Van der Waals （vdW） heterojunctions based on two-dimensional （2D） atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized with layered molecular crystals using a two-step physical vapor transport （PVT） process. Both types of heterojunctions show clean and sharp interfaces without phase mixing under atomic force microscopy （AFM）. They also exhibit a strong interfacial built-in electric field similar to that of their inorganic counterparts. These heterojunctions have greater potential for device applications than individual materials. The lateral heterojunction （LHJ） devices show rectifying characteristics due to the asymmetric energy barrier for holes at the interface, while the vertical heterojunction （VHJ） devices behave like metal-insulator-semiconductor tunnel junctions, with pronounced negative differential conductance （NDC）. Our work extends the concept of vdW heterojunctions to molecular materials, which can be generalized to other layered organic semiconductors （OSCs） to obtain new device functionalities.展开更多
The properties of two-dimensional(2 D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds f...The properties of two-dimensional(2 D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2 D layered materials, the lattice mismatch influences slightly on the growth of 2 D heterojunctions, thus providing a flexible design strategy.2 D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2 D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition(CVD) method was recently developed and applied for the preparation of 2 D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2 D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2 D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2 D heterojunctions for future applications in integrated circuits.展开更多
基金Project supported by National Science Funds for Creative Research Groups of China(Grant No.61421002)
文摘High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.
基金supported by the Science & Technology Project of Anhui Province (16030701091)the Natural Science Research Project of Anhui Provincial Education Department (KJ2019A0030)+2 种基金the Support Project of Outstanding Young Talents in Anhui Provincial Universities (gxyqZD2018006)the National Natural Science Foundation of China(11704002, 31701323)the Anhui Provincial Natural Science Foundation (1908085QF251,1808085MF185)
文摘A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Based on an oxygen vacancy scramble effect,the zero-dimensional anatase TiO2 quantum dots,surrounding on two-dimensional conductive Ti3C2TX sheets,are in situ rooted on three-dimensional SnO2 nanoparticles,constructing nanoscale TiO2/SnO2 heterojunctions.The fabrication is implemented in a controlled lowtemperature anneal method in air and then in N2 atmospheres.With the optimal MXene content,the optical property,the crystallinity of perovskite layer,and internal interfaces are all facilitated,contributing more amount of carrier with effective and rapid transferring in device.The champion power conversion efficiency of resultant perovskite solar cells achieves 19.14%,yet that of counterpart is just 16.83%.In addition,it can also maintain almost 85%of its initial performance for more than 45 days in 30–40%humidity air;comparatively,the counterpart declines to just below 75%of its initial performance.
基金the support from the Zhejiang Provincial Natural Science Foundation (No.LR22E070001),the National Natural Science Foundation of China (Nos.12275239 and 11975205)the Guangdong Basic and Applied Basic Research Foundation (No.2020B1515120048).
文摘Herein,Co/CoO heterojunction nanoparticles(NPs)rich in oxygen vacancies embedded in mesoporous walls of nitrogen-doped hollow carbon nanoboxes coupled with nitrogen-doped carbon nanotubes(P-Co/CoOV@NHCNB@NCNT)are well designed through zeolite-imidazole framework(ZIF-67)carbonization,chemical vapor deposition,and O_(2) plasma treatment.As a result,the threedimensional NHCNBs coupled with NCNTs and unique heterojunction with rich oxygen vacancies reduce the charge transport resistance and accelerate the catalytic reaction rate of the P-Co/CoOV@NHCNB@NCNT,and they display exceedingly good electrocatalytic performance for oxygen reduction reaction(ORR,halfwave potential[EORR,1/2=0.855 V vs.reversible hydrogen electrode])and oxygen evolution reaction(OER,overpotential(η_(OER,10)=377mV@10mA cm^(−2)),which exceeds that of the commercial Pt/C+RuO_(2) and most of the formerly reported electrocatalysts.Impressively,both the aqueous and flexible foldable all-solid-state rechargeable zinc-air batteries(ZABs)assembled with the P-Co/CoOV@NHCNB@NCNT catalyst reveal a large maximum power density and outstanding long-term cycling stability.First-principles density functional theory calculations show that the formation of heterojunctions and oxygen vacancies enhances conductivity,reduces reaction energy barriers,and accelerates reaction kinetics rates.This work opens up a new avenue for the facile construction of highly active,structurally stable,and cost-effective bifunctional catalysts for ZABs.
基金Project supported by the Foundation of Hebei Education Department, China (Grant No 2003130)
文摘This paper presents calculating results of the two-dimensional electron gas （2DEG） distributions in AlGaN/GaN material system by solving the Schroedinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schroedinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11104250,61274099,and 11774313)the Science Technology Department of Zhejiang Province,China(Grant No.2012C21007)+1 种基金Zhejiang Province Innovation Team,China(Grant No.2011R50012)Zhejiang Provincial Natural Science Foundation,China(Grant No.LY17A040003)
文摘Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investigation of large-scale chemical vapor deposition(CVD)-grown monolayer MoS2 and exfoliated few-layer GaS heterojunctions.As revealed by photoluminescence(PL) characterization, the as-fabricated heterojunctions demonstrated edge interaction between the two layers.The heterojunction was sensitive to annealing and showed increased interaction upon annealing at 300℃ under vacuum conditions, which led to changes in both the emission peak position and intensity resulting from the strong coupling interaction between the two layers.Low-temperature PL measurements further confirmed the strong coupling interaction.In addition, defect-related GaS luminescence was observed in our few-layer GaS, and the PL mapping provided evidence of edge interaction coupling between the two layers.These findings are interesting and provide the basis for creating new material systems with rich functionalities and novel physical effects.
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
基金This work was supported by the National Basic Research Program of China （Nos. 2012CB932400 and 2013CB933500）, the Major Research Plan of the National Natural Science Foundation of China （Nos. 91233110 and 91333208）, the National Na~ral Science Foundation of China （No. 61422403）, the Natural Science Foundation of Jiangsu Province （No. BK20140332）, and a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions （PAPD）. This work was also supported by QinLan Project.
文摘As one of the most important semiconductor materials, silicon （Si） has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p-n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional （2D） layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.
基金Acknowledgements This work was supported in part by National Basic Research Program of China （Nos. 2013CBA01604 and 2015CB921600）, National Natural Science Foundation of China （Nos. 61325020, 61261160499, 11274154, and 61521001）, Research Grant Council of Hong Kong （No. SARN_CUHK405/12）, Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, ＂Jiangsu Shuangchuang＂ program and ＂Jiangsu Shuangchuang Team＂ Program.
文摘Van der Waals （vdW） heterojunctions based on two-dimensional （2D） atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized with layered molecular crystals using a two-step physical vapor transport （PVT） process. Both types of heterojunctions show clean and sharp interfaces without phase mixing under atomic force microscopy （AFM）. They also exhibit a strong interfacial built-in electric field similar to that of their inorganic counterparts. These heterojunctions have greater potential for device applications than individual materials. The lateral heterojunction （LHJ） devices show rectifying characteristics due to the asymmetric energy barrier for holes at the interface, while the vertical heterojunction （VHJ） devices behave like metal-insulator-semiconductor tunnel junctions, with pronounced negative differential conductance （NDC）. Our work extends the concept of vdW heterojunctions to molecular materials, which can be generalized to other layered organic semiconductors （OSCs） to obtain new device functionalities.
基金supported by the National Natural Science Foundation of China(Grant Nos.61622406,11674310,61571415,and 51502283)the National Key Research and Development Program of China(Grant Nos.2017YFA0207500,and 2016YFB0700700)+1 种基金“Hundred Talents Program”of Chinese Academy of Sciences(CAS)the CAS/SAFEA International Partnership Program for Creative Research Teams
文摘The properties of two-dimensional(2 D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2 D layered materials, the lattice mismatch influences slightly on the growth of 2 D heterojunctions, thus providing a flexible design strategy.2 D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2 D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition(CVD) method was recently developed and applied for the preparation of 2 D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2 D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2 D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2 D heterojunctions for future applications in integrated circuits.
