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Families of magnetic semiconductors——an overview 被引量:7
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作者 Tomasz Dietl Alberta Bonanni Hideo Ohno 《Journal of Semiconductors》 EI CAS CSCD 2019年第8期3-7,共5页
The interplay of magnetic and semiconducting properties has been in the focus for more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magne... The interplay of magnetic and semiconducting properties has been in the focus for more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor families, including europium chalcogenides, chromium spinels, dilute magnetic semiconductors, dilute ferromagnetic semiconductors and insulators, mentioning also sources of non-uniformities in the magnetization distribution, accounting for an apparent high Curie temperature ferromagnetism in many systems. Our survey is carried out from today's perspective of ferromagnetic and antiferromagnetic spintronics as well as of the emerging fields of magnetic topological materials and atomically thin 2D layers. 展开更多
关键词 magnetic and dilute magnetic semiconductors topological materials 2d systems
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SnP_(2)S_(6)半导体层数依赖的压电效应
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作者 乔玲 郭宇 周思 《四川大学学报(自然科学版)》 CAS CSCD 北大核心 2023年第5期149-156,共8页
二维压电材料在能源、电子和光电子学方面的应用引起了越来越多的关注.从实验合成的压电晶体SnP_(2)S_(6)出发,我们系统研究了单层、双层、三层和块体SnP_(2)S_(6)的压电效应.第一性原理计算表明:层状SnP_(2)S_(6)具有良好的热力学和动... 二维压电材料在能源、电子和光电子学方面的应用引起了越来越多的关注.从实验合成的压电晶体SnP_(2)S_(6)出发,我们系统研究了单层、双层、三层和块体SnP_(2)S_(6)的压电效应.第一性原理计算表明:层状SnP_(2)S_(6)具有良好的热力学和动力稳定性,其带隙和载流子有效质量与层数无关,而压电性质具有明显的层数依赖性;单层SnP_(2)S_(6)的压电系数(d11)高达14.18 pm/V,远大于MoS2、h-BN和InSe的压电系数,双层SnP_(2)S_(6)的面外压电系数(d33)大于12 pm/V.优异的压电性能使SnP_(2)S_(6)在二维压电传感器和纳米发电机等器件中的应用成为可能. 展开更多
关键词 二维材料 SnP2S6半导体 压电性质 电子结构 层数
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单层MoSe_(2)单晶的光学及电学性能探究
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作者 段程竽 陈佳美 辛星 《物理实验》 2023年第5期43-48,共6页
采用Au箔作为生长衬底,通过化学气相沉积法制备了高质量的单层MoSe_(2)单晶.通过光学显微镜、扫描电子显微镜、扫描透射电子显微镜等对其形貌和结构进行了表征,研究了单层MoSe_(2)单晶的光学及电学特性.结果表明:单层MoSe_(2)具有非线... 采用Au箔作为生长衬底,通过化学气相沉积法制备了高质量的单层MoSe_(2)单晶.通过光学显微镜、扫描电子显微镜、扫描透射电子显微镜等对其形貌和结构进行了表征,研究了单层MoSe_(2)单晶的光学及电学特性.结果表明:单层MoSe_(2)具有非线性光学特性,并具有直接带隙结构(带隙宽度约为1.56 eV)及较好的光致发光特性.当其作为场效应晶体管器件的半导体沟道材料时,器件的载流子迁移率为1.6 cm^(2)/(V·s),开关比约为104. 展开更多
关键词 MoSe_(2) 化学气相沉积 拉曼光谱 二维半导体材料
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Preparation and characterization of HMX/EVA/hBNNSs microcomposites with improved thermal stability and reduced sensitivity 被引量:6
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作者 Yue Yang Xiao-dong Li +4 位作者 Yan-tao Sun Jian-an Tian Hui-min Liu Bi-dong Wu Jing-yu Wang 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2021年第2期650-656,共7页
Hexagonal boron nitride nanosheets(HBNNSs)have huge potential in the field of coating materials owing to their remarkable chemical stability,mechanical strength and thermal conductivity.Thin-layer hBNNSs were obtained... Hexagonal boron nitride nanosheets(HBNNSs)have huge potential in the field of coating materials owing to their remarkable chemical stability,mechanical strength and thermal conductivity.Thin-layer hBNNSs were obtained by a liquid-phase exfoliation of h-BN powders and incorporated into EVA coatings for improving the safety performance of 1,3,5,7-tetranitro-1,3,5,7-tetrazocane(HMX).HBNNSs and ethylene-vinyl acetate copolymer(EVA)were introduced to HMX by a solvent-slurry process.For comparison,the HMX/EVA and HMX/EVA/graphene(HMX/EVA/G)composites were also prepared by a similar process.The morphology,crystal form,surface element distribution,thermal decomposition property and impact sensitivity of HMX/EVA/hBNNSs composites were contrastively investigated.Results showed that as prepared HMX/EVA/hBNNSs composites were well coated with hBNNSs and EVA,and exhibited better thermal stability and lower impact sensitivity than that of HMX/EVA and HMX/EVA/G composites,suggesting superior performance of desensitization of hBNNSs in explosives. 展开更多
关键词 Energetic materials 2d(two dimensional)materials HBNNSs(hexagonal boron nitride nanosheets) HMX(1 3 5 7-Tetranitro-1 3 5 7-tetrazocane) Thermal stability Mechanical sensitivity
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Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction 被引量:4
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作者 Mosayeb Naseri Shiru Lin +2 位作者 Jaafar Jalilian Jinxing Gu Zhongfang Chen 《Frontiers of physics》 SCIE CSCD 2018年第3期101-109,共9页
By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanolnaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrin... By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanolnaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the elec- tronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and excep- tional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells. 展开更多
关键词 2d materials density functional calculations wide bandgap semiconductors
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Two-dimensional aluminum monoxide nanosheets: A computational study
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作者 Shiru Lin Yanchao Wang Zhongfang Chen 《Frontiers of physics》 SCIE CSCD 2018年第3期37-44,共8页
By means of density functional theory (DFT) computations and particle-swarm optimization (PSO) structure searches, we herein predict five low-lying energy structures of two-dimensional (2D) aluminum monoxide (... By means of density functional theory (DFT) computations and particle-swarm optimization (PSO) structure searches, we herein predict five low-lying energy structures of two-dimensional (2D) aluminum monoxide (AIO) nanosheets. Their high cohesive energy, absence of imaginary phonon dispersion, and good thermal stability make them feasible targets for experimental realization. These monolayers exhibit diverse structural topologies, for instance, PmA- and Pmm-A10 possess buckled four- and six- membered A10 rings, whereas P62-, PmB-, and P6m-A10 have pores of varied sizes. Interestingly, the most energetically preferred monolayers, PmA- and Pmm-A10, feature wide band gaps (2.45 and 5.13 eV, respectively), which are promising for green and blue light-emitting devices (LEDs) and photodetectors. 展开更多
关键词 2d materials density functional calculations particle swarm optimization wide-band-gap semiconductor
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Stacking driven Raman spectra change of carbon based 2D semiconductor C_(3)N
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作者 Yucheng Yang Wenya Wei +5 位作者 Peng He Siwei Yang Qinghong Yuan Guqiao Ding Zhi Liu Xiaoming Xie 《Chinese Chemical Letters》 SCIE CAS CSCD 2022年第5期2600-2604,共5页
As a two-dimensional carbon based semiconductor,C_(3)N acts as a promising material in many application areas.However,the basic physical properties such as Raman spectrum properties of C_(3)N is still not clear.In thi... As a two-dimensional carbon based semiconductor,C_(3)N acts as a promising material in many application areas.However,the basic physical properties such as Raman spectrum properties of C_(3)N is still not clear.In this paper,we clarify the Raman spectrum properties of multilayer C_(3)N.Moreover,the stacking driven Raman spectra change of multilayer C_(3)N is also discussed. 展开更多
关键词 C_(3)N Raman spectrum Carbon based semiconductor 2d materials Stacking structure
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一种新型吡咯并吡咯二酮衍生物的设计与合成 被引量:2
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作者 孙丽 范高超 +3 位作者 洪芳 冯宇 苏智兴 张卫民 《精细化工》 EI CAS CSCD 北大核心 2012年第7期625-631,共7页
以2,2'-联二噻吩为原料,通过溴化、选择性还原、氨基化环化、甲酰基化、加成-消除反应及缩合反应等成功合成了一种新型的吡咯并吡咯二酮衍生物(Ⅰ),并通过核磁共振波谱、傅里叶变换红外光谱、质谱和元素分析对其结构进行了表征。该... 以2,2'-联二噻吩为原料,通过溴化、选择性还原、氨基化环化、甲酰基化、加成-消除反应及缩合反应等成功合成了一种新型的吡咯并吡咯二酮衍生物(Ⅰ),并通过核磁共振波谱、傅里叶变换红外光谱、质谱和元素分析对其结构进行了表征。该化合物具有良好的溶解性能,其溶液呈现鲜艳的紫红色,在可见光区530~700 nm有强吸收,可望成为低能隙聚合物太阳能电池材料的重要结构单元,从而获得转化率高的光伏器件。 展开更多
关键词 吡咯并吡咯二酮 二噻吩并吡咯 有机半导体材料 聚合物单体 颜料 功能材料
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Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers 被引量:1
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作者 Javier Martfn-Sanchez Antonio Mariscal +8 位作者 Marta De Luca Aitana Tarazaga Martin-Luengo Georg Gramse Alma Halilovic Rosalia Serna Alberta Bonanni Ilaria Zardo Rinaldo Trotta Armando Rastelli 《Nano Research》 SCIE EI CAS CSCD 2018年第3期1399-1414,共16页
Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity ... Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe2 monolayer flakes encapsulated with SiOx and AlxOy layers by means of chemical and physical deposition techniques. Conformal coating on untreated and non- functionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices. 展开更多
关键词 two dimensional (2d)materials dielectric encapsulation transition metaldichalcogenides semiconductors PHOTOLUMINESCENCE WSe2
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Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe 被引量:1
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作者 Himani Arora Artur Erbe 《InfoMat》 SCIE CAS 2021年第6期662-693,共32页
The field of two-dimensional(2D)materials has stimulated considerable interest in the scientific community.Owing to quantum confinement in one direction,intriguing properties have been reported in 2D materials that ca... The field of two-dimensional(2D)materials has stimulated considerable interest in the scientific community.Owing to quantum confinement in one direction,intriguing properties have been reported in 2D materials that cannot be observed in their bulk form.The advent of semiconducting 2D materials with a broad range of electronic properties has provided fascinating opportunities to design and configure next-generation electronics.One such emerging class is the family of III-VI monochalcogenides,the two prominent members of which are indium selenide(InSe)and gallium selenide(GaSe).In contrast to transition metal dichalcogenides,their high intrinsic mobility and the availability of a direct bandgap at small thicknesses have attracted researchers to investigate the underlying physical phenomena as well as their technological applications.However,the sensitivity of InSe and GaSe to environmental influences has limited their exploitation in functional devices.The lack of methods for their scalable synthesis further hinders the realization of their devices.This review article outlines recent advancements in the synthesis and understanding of the charge transport properties of InSe and GaSe for their integration into technological applications.A detailed summary of the improvements in the device structure by optimizing extrinsic factors such as bottom substrates,metal contacts,and device fabrication schemes is provided.Furthermore,various encapsulation techniques that have been proven effective in preventing the degradation of InSe and GaSe layers under ambient conditions are thoroughly discussed.Finally,this article presents an outlook on future research ventures with respect to ongoing developments and practical viability of these materials. 展开更多
关键词 2d materials 2d transistors electronic properties gallium selenide indium selenide vdW semiconductors
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Black phosphorus as a new lubricant 被引量:29
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作者 Wei WANG Guoxin XIE Jianbin LUO 《Friction》 SCIE CSCD 2018年第1期116-142,共27页
In recent years, a new 2D-layered material—black phosphorus(BP)—has been a rising star after the era of graphene owing to its high charge carrier mobility, tunable direct bandgap and unique in-plane anisotropic stru... In recent years, a new 2D-layered material—black phosphorus(BP)—has been a rising star after the era of graphene owing to its high charge carrier mobility, tunable direct bandgap and unique in-plane anisotropic structure. With the development of the synthesis and modification methods of BP, its extensive applications, e.g., transistors, batteries and optoelectronics have emerged. In order to explore its full potential, research into the tribological properties of BP 2D-layered materials such as lubrication additives and fillers in self-lubricating composite materials would be not only of high scientific value but also of practical significance. In this work, recent advances on the friction and lubrication properties of BP nanosheets made by our group, including the micro-friction properties, the lubrication properties of BP nanosheets as water-based and oil-based lubrication additives, and the friction and wear of BP/PVDF composites will be presented. Finally, the future challenges and opportunities in the use of BP materials as lubricants will be discussed. 展开更多
关键词 black phosphorus two‐dimensional (2d) material lubricant additive self-lubricating composite materials friction
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