The Optimal Cross-section Design of the “Trapezoid-V” Shaped Drainage Canal of Viscous Debris Flow

Debris flow drainage canal is one of the most widely used engineering measures to prevent and manage debris flow hazards.The shape and the sizes of the cross-section are important parameters when design debris flow drainage canal.Therefore,how to design the appropriate shape and sizes of the cross-section so that the drainage canal can have the optimal drainage capacity is very important and few researched at home and abroad.This study was conducted to analyze the hydraulic condition of a Trapezoid-V shaped drainage canal and optimize its cross-section.By assuming characteristic sizes of the cross-section,the paper deduced the configuration parameter of the cross-section of a Trapezoid-V shaped debris flow drainage canal.By theory analysis,it indicates that the optimal configuration parameter is only related to the side slope coefficient and the bottom transverse slope coefficient.For this study,the Heishui Gully,a first-order tributary of the lower Jinsha River,was used as an example to design the optimal cross-section of the drainage canal of debris flow.

The Richtmyer–Meshkov instability of a 'V' shaped air/helium interface subjected to a weak shock

The Richtmyer-Meshkov instability ofa ‘V＇ shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V＇ shaped interface with accurate initial conditions. Five kinds of ‘V＇ shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio.

RIGID-PLASTIC MECHANICAL MODEL FOR THE FORGING METHOD WITH HORIZONTAL V-SHAPED ANVIL

In order to decrease the anisotropy of mechanical properties, the rigid-plastic mechanical model for the forging method with horizontal V-shaped anvil is presented. The forging method, through the change of anvils shape, is able to control fibrous tissue direction, to improve the anisotropy of mechanical properties of axial forgings, to realize uniform forging. Therefore, the forging method can overcome the defect that conventional forging methods produce. The mechanism of the forging method with horizontal V-shaped anvil and the process of metal deformation are analyzed. The agreement of theoretical analysis with experimental study verifies the fact that the forging method with horizontal V-shaped anvil can control effectively the mechanical properties of axial forgings.

Scattering of SH waves induced by a symmetrical V-shaped canyon: a unified analytical solution

This paper reports a series solution of wave functions for two-dimensional scattering and diffraction of plane SH waves induced by a symmetrical V-shaped canyon with different shape ratios. A half-space with a symmetrical V-shaped canyon is divided into two sub-regions by using a circular-arc auxiliary boundary. The two sub-regions are represented by global and local cylindrical coordinate systems, respectively. In each coordinate system, the wave field satisfying the Helmholtz equation is represented by the separation of variables method, in terms of the series of both Bessel functions and Hankel functions with unknown complex coefficients. Then, the two wave fields are described in the local coordinate system using the Graf addition theorem. Finally, the unknown coefficients are sought by satisfying the continuity conditions of the auxiliary boundary. To consider the phase characteristics of the wave scattering, a parametric analysis is carried out in the time domain by assuming an incident signal of the Ricker type. Surface and subsurface transient responses demonstrate the characteristics and mechanisms of wave propagating and scattering.

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Electronic and transport properties of V-shaped defect zigzag MoS_2 nanoribbons

Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.

Wave Pressure Acting on V-Shaped Floating Breakwater in Random Seas

Wave pressure on the wet surface of a V-shaped floating breakwater in random seas is investigated. Considering the diffraction effect, the unit velocity potential caused by the single regular waves around the breakwater is solved using the finite-depth Green function and boundary element method, in which the Green function is solved by integral method. The Response-Amplitude Operator(RAO) of wave pressure is acquired according to the Longuet-Higgins' wave model and the linear Bernoulli equation. Furthermore, the wave pressure's response spectrum is calculated according to the wave spectrum by discretizing the frequency domain. The wave pressure's characteristic value corresponding to certain cumulative probability is determined according to the Rayleigh distribution of wave heights. The numerical results and field test results are compared, which indicates that the wave pressure calculated in random seas agrees with that of field measurements. It is found that the bigger angle between legs will cause the bigger pressure response, while the increase in leg length does not influence the pressure significantly. The pressure at the side of head sea is larger than that of back waves. When the incident wave angle changes from 0? to 90?, the pressure at the side of back waves decreases clearly, while at the side of head sea, the situation is more complicated and there seems no obvious tendency. The concentration of wave energy around low frequency(long wavelength) will induce bigger wave pressure, and more attention should be paid to this situation for the structure safety.

Construction of a 3D Co(Ⅱ) Framework Based on Two Types of V-shaped Bidentate Ligands

A three-dimensional （3D） coordination polymer {[Co（bdc）（dpb）]·H2O}n （1） was prepared by solvothermal reaction of 1,3-dipyridyl benzene （dpb） with deprotonated 1,3-benzene- dicarboxylate （H2bdc）, and was characterized by elemental analysis, IR spectroscopy, and X-ray single-crystal diffraction. It crystallizes in the monoclinic system, space group C2/c with α = 15.478（6）, b = 12.865（5）, c = 24.091（10） ？, β = 95.599（5）°, V = 4774（3） ？3, C24H18CoN2O5, Mr = 473.34, Dc = 1.267 g/cm3, F（000） = 1864.0, μ = 0.748 mm-1 and Z = 8. Each Co（II） ion links three bdc2- anions to form an infinitely 1D ladder-shaped chain containing binuclear [（COO）Co]2 cluster, and dpb links adjacent 1D chains to form a 3D pcu framework. In addition, the UV-vis of 1 was also studied.

Construction of a 2D Cd(II) Coordination Polymer Based on a V-shaped Bidentate Ligand

A two-dimensional（2D）coordination polymer{[Cd（bdc）（dpb）]·H2O}n（1）has been prepared by solvothermal reaction of 1,3-dipyridyl benzene（1,3-dpb）with deprotonated1,4-benzenedicarboxylate（H2bdc）,and was characterized by elemental analysis,IR spectroscopy,and X-ray single-crystal diffraction.It crystallizes in the monoclinic system,space group C2/c with a=15.1839（12）,b=20.7585（17）,c=7.2989（6）,β=117.3450（10）°,V=2043.5（3）3,C24H18N2O5Cd,Mr=526.81,Dc=1.712 g/cm3,F（000）=1056.0,μ=1.110 mm-1and Z=4.The neighboring Cd（II）ions link the bdc2-anions and 1,3-dpb to form an infinite 2D sheet,and such two2D sheets are interlocked with each other to form a 2D→2D sheet.Two groups of interlocked sheets are further linked together by intermolecularπ···πinteraction,giving a 3D supramolecular network.In addition,the fluorescence property of 1 was also studied.

Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.

Enhanced optical transmission by V-shaped nanoslit in metal film

In this paper, we reveal that the enhanced transmission through a perforated metal film can be further boosted up by a V-shaped nanoslit, which consists of two connected oblique slits. The maximum transmission at resonance can be enhanced significantly by 71.5% in comparison with the corresponding vertical slit with the same exit width. The value and position of transmission resonance peak strongly depend on the apex angle of the V-shaped slit. The optimum apex angle, at which the transmission is maximal, is sensitive to the slit width. Such phenomena can be well explained by a concrete picture in which the incident wave drives free electrons on the slit walls. Moreover, we also simply analyze the splitting of the transmission peak in the symmetry broken V-shaped slit, originating from the resonances of different parts of the V-shaped slit. We expect that our findings will be used to design the nanoscale light sources based on the metal nanoslit structures.

Study on a W-band modified V-shaped microstrip meander-line traveling-wave tube

The study on a miniaturized, low-voltage, wide-bandwidth, high-efficiency modified V-shaped microstrip meander-line slow-wave structure is presented. This structure is evolved from the original U-shaped microstrip meander-line slow-wave structure, combining the advantages of a traditional microstrip and a rectangular helix. In this paper, simulations of the electromagnetic characteristics and the beam-wave interaction of this structure are carried out. Our study shows that when the design voltage and the current of a sheet electron beam are set to be 4700 V and 100 mA, respectively, this miniature millimeter-wave power amplifier is capable of delivering 160-W output power with a corresponding gain of 37.3 dB and a maximum interaction efficiency of 34% at 97 GHz.

基于V形记忆曲线的汽车轮毂造型衍生设计方法

为提高汽车轮毂造型设计的效率,增强品牌造型识别度,提出一种高效的轮毂造型衍生创新设计方法。通过分析轮毂V形记忆曲线的变化规律和特点,总结出两类V形记忆曲线,并根据控制点数量分别进行了定量化表达;以轮毂造型的5个设计要素为基础,提取轮毂骨骼的特征并建立运算法则,构建基于V形记忆曲线的轮毂造型衍生设计方法;通过参数化实现造型构建方案衍生,验证了该方法的可行性。研究结果表明:基于V形记忆曲线的轮毂造型衍生设计方法提高了轮毂设计效率,实现了轮毂造型创新及提升品牌特征延续的设计目标,为同类型产品的创新设计提供参考。

低肋与V形肋复合结构在双通道中的强化换热数值研究

随着燃气轮机内涡轮入口温度的升高,燃气轮机会出现热障问题,为保证燃气轮机安全运行,复合结构能够有效提高通道的冷却性能来解决此问题。采用SST k-ω湍流模型对带有低肋与V肋复合结构双通道的流动与传热特性进行了数值模拟,将圆形肋复合结构、扇叶形肋复合结构和葫芦形肋复合结构与纯V形肋在雷诺数为10 000~60 000时的传热性能进行比较,探索出综合换热效果最佳的复合结构。发现相比于纯V形肋通道,复合结构双通道的综合传热性能均得到提升,其中葫芦形肋与V形肋组成的复合结构的综合换热效果最好。葫芦肋复合结构的Nu相比于纯V形肋提高了4.33%~6.6%,f提高了0.04%~4.48%,η最佳值达到了2.13。葫芦形肋复合结构的η比45°斜方形肋和45°斜花形肋分别增大了25.51%~32.98%和4.73%~10.51%,同时,低肋与V形肋组成的复合结构综合换热性能要优于凹坑与V形肋组成的复合结构。葫芦肋复合结构有效增强通道的换热效果且压力损失增长较小,可显著提升涡轮内部冷却通道的综合换热性能。

V型折叠颏下皮瓣修复口腔缺损的临床应用

目的:口腔中小型缺损修复一直是一个难题,游离皮瓣和远位带蒂组织瓣难以满足临床需求,传统颏下皮瓣存在供区损伤风险。本研究旨在探讨V型折叠颏下皮瓣修复口腔中小型缺损的疗效。方法:回顾性分析2019年3月至2022年12月中南大学湘雅三医院口腔科收治的28例口腔黏膜病变患者的临床资料。根据颏下皮瓣手术方式的不同将患者分为V型折叠组(17例)和传统组(11例),V型折叠组采用V型折叠颏下皮瓣进行术后软组织修复,传统组采用传统颏下皮瓣进行修复,患者术后随访6~48个月。比较2组皮瓣存活情况、皮瓣修复时间以及皮瓣修复效果。结果:2组皮瓣存活率、皮瓣大小、制瓣时间、修复手术时间和术后住院时间差异均无统计学意义(均P>0.05)。术后6个月,V型折叠组无抬头困难和下唇外翻,无皮肤“猫耳”畸形,疤痕隐藏于下颌骨下缘处,创面美观度、功能评分均明显高于传统组(均P<0.05)。结论:V型折叠颏下皮瓣具有设计灵活、制备简单、血供可靠、保护供区等优点,可以有效维持颏部美观和避免功能障碍。

不同V型辅助配体构筑的两个镉配位聚合物的合成、结构和荧光性质

在溶剂热条件下,合成了2个基于V型辅助配体(bipmo、bppmo)的镉配位聚合物{[Cd(bipmo)(NDC)]·1.75H_(2)O}_n (1)和{[Cd(bppmo)(NDC)(H_(2)O)]·H_(2)O}_(n) (2),其中H_(2)NDC=2,6-萘二羧酸,bipmo=双(4-(1H-咪唑-1-基)苯基)甲酮,bppmo=双(4-(吡啶-4-基)苯基)甲酮。利用单晶X射线衍射、键价和分析、红外光谱和元素分析对其结构进行了表征。研究发现,配合物1具有二重互穿的{6~3}拓扑结构。配合物2同样是3-连接的{6~3}拓扑,却存在三重穿插结构。分析表明,V型配体对最终结构的形成有很大影响。此外,对配合物1和2的发光性质也进行了详细研究。

退火工艺对Ti-Ni-V形状记忆合金相变和形变行为的影响

利用差示扫描量热仪和拉伸试验研究了400℃×10~120 min和500℃×10~120 min退火态Ti-50.8Ni-0.5V合金的相变行为、拉伸性能和形状记忆行为。结果表明:随退火温度和时间变化,合金的相变类型、R相变温度T_(R)和热滞ΔT_(R)、马氏体相变温度T_(M)和热滞ΔT_(M)、抗拉强度R_(m)、伸长率A、应力诱发马氏体相变临界应力σ_(M)、加载-卸载残余应变ε_(R)和能耗W_(D)的变化规律如下:400和500℃退火态Ti-50.8Ni-0.5V合金皆发生B2→R→B19’/B19’→R→B2(B2-母相,CsCl型结构;R-R相,菱方结构;B19’-马氏体相,单斜结构)型相变;T_(R)^(400℃)>T_(R)^(500℃),T_(M)^(500℃)>T_(M)^(400℃),ΔT_(M)^(400℃)>ΔT_(M)^(500℃)≥ΔT_(R)^(400℃)≈ΔT_(R)^(500℃)≈4℃;R_(m)^(400℃)>R_(m)^(500℃),A^(500℃)>A^(400℃);400℃退火态合金的超弹性(SE)稳定性高于500℃退火态合金。随退火时间延长,T_(R)^(400℃)、T_(R)^(500℃)、T_(M)^(400℃)和T_(M)^(500℃)升高,ΔT_(M)^(400℃)和ΔT_(M)^(500℃)减小,ΔT_(R)^(400℃)和ΔT_(R)^(500℃)在3.5~4.6℃之间变化;400℃退火态合金保持SE,500℃退火态合金由SE向SE+SME(形状记忆效应)转变;σ_(M)^(400℃)和σ_(M)^(500℃)降低;W_(D)^(400℃)和W_(D)^(500℃)增加;ε_(R)^(500℃)先降后升;ε_(R)^(400℃)在0.64%~1.36%之间变化。要使Ti-50.8Ni-0.5V合金获得较高的T_(R),可对其进行400℃退火;要使该合金获得较高的T_(M),可对其进行500℃退火;要使该合金在室温下获得超弹性,可对其进行400℃×10~120 min或500℃×10~60 min退火。

明代鞍山“V”型长城略论

在明长城的辽东段,一段“V”型边墙跨于鞍山之境。分析“V”型长城的形成,与辽河套地区的特殊地理环境紧密相关,也与明初同北元势力争夺控制权过程中所形成的特定交通网络形制有密切关系。形成于正统年间的这段“V”型长城一度被明朝臣诟病,有意裁弯取直。有明一代,“V”型长城在抵御边患方面呈现出一定的优势,故该形制一直得以持续。透过史实细节可知,长城并非简单的军事防御工事,在其背后是稳定的经贸与文化交往,可以透视出长城作为文明象征物的深刻内涵。

V型交替极永磁同步电机气隙磁场调制效应研究

与传统V型永磁(V-shaped permanent magnet,VPM)结构相邻N和S极永磁体形成一对极磁场不同,V型交替极永磁(V-shaped consequent-pole permanent magnet,VCPM)结构永磁体与相邻铁心形成一对极磁场。为进一步探究VPM和VCPM电机磁场分布的不同带来的转矩性能差异,首先通过麦克斯韦应力张量法确认,并量化分析VPM和VCPM电机气隙磁密各次谐波转矩贡献,揭示两种电机主谐波与调制谐波转矩贡献的差异性,进而阐明VCPM电机转矩提升的根本原因在于其显著增加的调制谐波贡献的转矩分量。然后,研究关键结构参数对VCPM电机气隙磁场调制效应的影响规律。最后,加工一台VCPM样机并开展试验研究,验证理论分析和有限元仿真结果的可靠性。