Magnetic and electronic properties of bulk and two-dimensional FeBi_(2)Te_(4):A first-principles study

Layered magnetic materials,such as MnBi_(2)Te_(4),have drawn much attention owing to their potential for realizing twodimensional(2D)magnetism and possible topological states.Recently,FeBi_(2)Te_(4),which is isostructural to MnBi_(2)Te_(4),has been synthesized in experiments,but its detailed magnetic ordering and band topology have not been clearly understood yet.Here,based on first-principles calculations,we investigate the magnetic and electronic properties of FeBi_(2)Te_(4)in bulk and 2D forms.We show that different from MnBi_(2)Te_(4),the magnetic ground states of bulk,single-layer,and bilayer FeBi_(2)Te_(4)all favor a 120°noncollinear antiferromagnetic ordering,and they are topologically trivial narrow-gap semiconductors.For the bilayer case,we find that a quantum anomalous Hall effect with a unit Chern number is realized in the ferromagnetic state,which may be achieved in experiment by an external magnetic field or by magnetic proximity coupling.Our work clarifies the physical properties of the new material system of FeBi_(2)Te_(4)and reveals it as a potential platform for studying magnetic frustration down to 2D limit as well as quantum anomalous Hall effect.

Electronic modulation of two-dimensional bismuth-based nanosheets for electrocatalytic CO_(2) reduction to formate: A review

Electrocatalytic CO_(2) reduction reaction(eCO_(2) RR)has significant relevance to settle the global energy crisis and abnormal climate problem via mitigating the excess emission of waste CO_(2) and producing high-value-added chemicals.Currently,eCO_(2) RR to formic acid or formate is one of the most technologically and economically viable approaches to realize high-efficiency CO_(2) utilization,and the development of efficient electrocatalysts is very urgent to achieve efficient and stable catalytic performance.In this review,the recent advances for two-dimensional bismuth-based nanosheets(2D Bi-based NSs)electrocatalysts are concluded from both theoretical and experimental perspectives.Firstly,the preparation strategies of 2D Bi-based NSs in aspects to precisely control the thickness and uniformity are summarized.In addition,the electronic regulation strategies of 2D Bi-based NSs are highlighted to gain insight into the effects of the structure-property relationship on facilitating CO_(2) activation,improving product selectivity,and optimizing carrier transport dynamics.Finally,the considerable challenges and opportunities of 2D Bi-based NSs are discussed to lighten new directions for future research of eCO_(2) RR.

2D multifunctional devices:from material preparation to device fabrication and neuromorphic applications

Neuromorphic computing systems,which mimic the operation of neurons and synapses in the human brain,are seen as an appealing next-generation computing method due to their strong and efficient computing abilities.Two-dimensional (2D) materials with dangling bond-free surfaces and atomic-level thicknesses have emerged as promising candidates for neuromorphic computing hardware.As a result,2D neuromorphic devices may provide an ideal platform for developing multifunctional neuromorphic applications.Here,we review the recent neuromorphic devices based on 2D material and their multifunctional applications.The synthesis and next micro–nano fabrication methods of 2D materials and their heterostructures are first introduced.The recent advances of neuromorphic 2D devices are discussed in detail using different operating principles.More importantly,we present a review of emerging multifunctional neuromorphic applications,including neuromorphic visual,auditory,tactile,and nociceptive systems based on 2D devices.In the end,we discuss the problems and methods for 2D neuromorphic device developments in the future.This paper will give insights into designing 2D neuromorphic devices and applying them to the future neuromorphic systems.

A color image encryption scheme based on a 2D coupled chaotic system and diagonal scrambling algorithm

A novel color image encryption scheme is developed to enhance the security of encryption without increasing the complexity. Firstly, the plain color image is decomposed into three grayscale plain images, which are converted into the frequency domain coefficient matrices(FDCM) with discrete cosine transform(DCT) operation. After that, a twodimensional(2D) coupled chaotic system is developed and used to generate one group of embedded matrices and another group of encryption matrices, respectively. The embedded matrices are integrated with the FDCM to fulfill the frequency domain encryption, and then the inverse DCT processing is implemented to recover the spatial domain signal. Eventually,under the function of the encryption matrices and the proposed diagonal scrambling algorithm, the final color ciphertext is obtained. The experimental results show that the proposed method can not only ensure efficient encryption but also satisfy various sizes of image encryption. Besides, it has better performance than other similar techniques in statistical feature analysis, such as key space, key sensitivity, anti-differential attack, information entropy, noise attack, etc.

Waveguide-integrated optical modulators with two-dimensional materials

Waveguide-integrated optical modulators are indispensable for on-chip optical interconnects and optical computing.To cope with the ever-increasing amount of data being generated and consumed,ultrafast waveguide-integrated optical modulators with low energy consumption are highly demanded.In recent years,two-dimensional(2D)materials have attracted a lot of attention and have provided tremendous opportunities for the development of high-performance waveguide-integrated optical modulators because of their extraordinary optoelectronic properties and versatile compatibility.This paper reviews the state-of-the-art waveguide-integrated optical modulators with 2D materials,providing researchers with the developing trends in the field and allowing them to identify existing challenges and promising potential solutions.First,the concept and fundamental mechanisms of optical modulation with 2D materials are summarized.Second,a review of waveguide-integrated optical modulators employing electro-optic,all-optic,and thermo-optic effects is provided.Finally,the challenges and perspectives of waveguide-integrated modulators with 2D materials are discussed.

d带中心理论探究MoS_(2)电催化氢气析出反应机理的发展

二硫化钼(MoS_(2))纳米片是一种典型的二维材料,因其独特可调的电子结构和优异的氢气析出反应(HER)电催化活性受到研究者的广泛关注.为了进一步提高其电催化性能,科学家深入研究反应的微观机理,以期阐明材料电子结构中影响电催化性能的关键因素,构建合理的电子描述符.本文综述了近年来d带中心理论探究MoS_(2)电催化HER机理的起源、发展和现状,以期为该类催化剂的进一步发展提供指导.

Two-dimensional plane strain consolidation of unsaturated soils considering the depth-dependent stress

In practical engineering,the total vertical stress in the soil layer is not constant due to stress diffusion,and varies with time and depth.Therefore,the purpose of this paper is to investigate the effect of stress diffusion on the two-dimensional(2D)plane strain consolidation properties of unsaturated soils when the stress varies with time and depth.A series of semi-analytical solutions in terms of excess pore air and water pressures and settlement for 2D plane strain consolidation of unsaturated soils can be derived with the joint use of Laplace transform and Fourier sine series expansion.Then,the inverse Laplace transform of the semi-analytical solution is given in the time domain using a self-programmed code based on Crump’s method.The reliability of the obtained solutions is proved by the degeneration.Finally,the 2D plots of excess pore pressures and the curves of settlement varying with time,considering different physical parameters of unsaturated soil stratum and depth-dependent stress,are depicted and analyzed to study the 2D plane strain consolidation properties of unsaturated soils subjected to the depthdependent stress.

Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array

The Ga N high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the coupling efficiency between two-dimensional(2D)plasmons and THz radiation.In this work,we investigate the plasma oscillation,electromagnetic radiation,and the integration characteristics of Ga N HEMT targeting at a high THz radiation power source.The quantitative radiation power and directivity are obtained for integrated Ga N HEMT array with different array periods and element numbers.With the same initial plasma oscillation phase among the HEMT units,the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8electromagnetic wavelength.In addition,the radiation power of the HEMT array varies almost linearly with the element number,the smaller array period can lead to the greater radiation power.It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power.Increasing the element number can improve both the radiation directivity and power.We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency,which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements.The study of the radiation power amplification of the one-dimensional(1D)Ga N HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.

Green's functions of two-dimensional piezoelectric quasicrystal in half-space and bimaterials

In this paper,we obtain Green’s functions of two-dimensional(2D)piezoelectric quasicrystal(PQC)in half-space and bimaterials.Based on the elastic theory of QCs,the Stroh formalism is used to derive the general solutions of displacements and stresses.Then,we obtain the analytical solutions of half-space and bimaterial Green’s functions.Besides,the interfacial Green’s function for bimaterials is also obtained in the analytical form.Before numerical studies,a comparative study is carried out to validate the present solutions.Typical numerical examples are performed to investigate the effects of multi-physics loadings such as the line force,the line dislocation,the line charge,and the phason line force.As a result,the coupling effect among the phonon field,the phason field,and the electric field is prominent,and the butterfly-shaped contours are characteristic in 2D PQCs.In addition,the changes of material parameters cause variations in physical quantities to a certain degree.

High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.

Highly stable two-dimensional graphene oxide:Electronic properties of its periodic structure and optical properties of its nanostructures

According to first principle simulations, we theoretically predict a type of stable single-layer graphene oxide（C_2O）.Using density functional theory（DFT）, C_2O is found to be a direct gap semiconductor. In addition, we obtain the absorption spectra of the periodic structure of C_2O, which show optical anisotropy. To study the optical properties of C_2O nanostructures, time-dependent density functional theory（TDDFT） is used. The C_2O nanostructure has a strong absorption near 7 eV when the incident light polarizes along the armchair-edge. Besides, we find that the optical properties can be controlled by the edge configuration and the size of the C_2O nanostructure. With the elongation strain increasing, the range of light absorption becomes wider and there is a red shift of absorption spectrum.

A comparison of the transport properties of bilayer graphene,monolayer graphene,and two-dimensional electron gas

We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.

Deformed two-dimensional rogue waves in the (2+1)-dimensional Korteweg–de Vries equation

Within the(2+1)-dimensional Korteweg–de Vries equation framework,new bilinear B¨acklund transformation and Lax pair are presented based on the binary Bell polynomials and gauge transformation.By introducing an arbitrary functionφ(y),a family of deformed soliton and deformed breather solutions are presented with the improved Hirota’s bilinear method.By choosing the appropriate parameters,their interesting dynamic behaviors are shown in three-dimensional plots.Furthermore,novel rational solutions are generated by taking the limit of the obtained solitons.Additionally,twodimensional(2D)rogue waves(localized in both space and time)on the soliton plane are presented,we refer to them as deformed 2D rogue waves.The obtained deformed 2D rogue waves can be viewed as a 2D analog of the Peregrine soliton on soliton plane,and its evolution process is analyzed in detail.The deformed 2D rogue wave solutions are constructed successfully,which are closely related to the arbitrary functionφ(y).This new idea is also applicable to other nonlinear systems.

Origin of itinerant ferromagnetism in two-dimensional Fe_(3)GeTe_(2)

Magnetic order in two-dimensional systems was not supposed to exist at finite temperature.In recent years,the successful preparation of two-dimensional ferromagnetic materials such as CrI_(3),Cr_(2) Ge_(2) Te_(6),and Fe_(3)GeTe_(2) opens up a new chapter in the remarkable field of two-dimensional materials.Here,we report on a theoretical analysis of the stability of ferromagnetism in Fe_(3)GeTe_(2).We uncover the mechanism of holding long-range magnetic order and propose a model to estimate the Curie temperature of Fe_(3)GeTe_(2).Our results reveal the essential role of magnetic anisotropy in maintaining the magnetic order of two-dimensional systems.The theoretical method used here can be generalized to future research of other magnetic two-dimensional systems.

Two-dimensional hexagonal Zn3Si2 monolayer:Dirac cone material and Dirac half-metallic manipulation

The fascinating Dirac cone in honeycomb graphene,which underlies many unique electronic properties,has inspired the vast endeavors on pursuing new two-dimensional(2D)Dirac materials.Based on the density functional theory method,a 2D material Zn3Si2 of honeycomb transition-metal silicide with intrinsic Dirac cones has been predicted.The Zn3Si2 monolayer is dynamically and thermodynamically stable under ambient conditions.Importantly,the Zn3Si2 monolayer is a room-temperature 2D Dirac material with a spin-orbit coupling energy gap of 1.2 meV,which has an intrinsic Dirac cone arising from the special hexagonal lattice structure.Hole doping leads to the spin polarization of the electron,which results in a Dirac half-metal feature with single-spin Dirac fermion.This novel stable 2D transition-metal-silicon-framework material holds promises for electronic device applications in spintronics.

Preparation,properties,and applications of Bi_(2)O_(2)Se thin films:A review

Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin,have an ultra-large specific surface area,high carrier mobility,efficient channel current regulation,and extraordinary integration.In addition to graphene,other types of 2D nanomaterials have also been studied and applied in photodetectors,solar cells,energy storage devices,and so on.Bi_(2)O_(2)Se is an emerging 2D semiconductor material with very high electron mobility,modest bandgap,near-ideal subthreshold swing,and excellent thermal and chemical stability.Even in a monolayer structure,Bi_(2)O_(2)Se has still exhibited efficient light absorption.In this mini review,the latest main research progresses on the preparation methods,electric structure,and the optical,mechanical,and thermoelectric properties of Bi_(2)O_(2)Se are summarized.The wide rang of applications in electronics and photoelectronic devices are then reviewed.This review concludes with a discussion of the existing open questions/challenges and future prospects for Bi_(2)O_(2)Se.

Nonlocal vibration and buckling of two-dimensional layered quasicrystal nanoplates embedded in an elastic medium

A mathematical model for nonlocal vibration and buckling of embedded two-dimensional(2 D) decagonal quasicrystal(QC) layered nanoplates is proposed. The Pasternak-type foundation is used to simulate the interaction between the nanoplates and the elastic medium. The exact solutions of the nonlocal vibration frequency and buckling critical load of the 2 D decagonal QC layered nanoplates are obtained by solving the eigensystem and using the propagator matrix method. The present three-dimensional(3 D) exact solution can predict correctly the nature frequencies and critical loads of the nanoplates as compared with previous thin-plate and medium-thick-plate theories.Numerical examples are provided to display the effects of the quasiperiodic direction,length-to-width ratio, thickness of the nanoplates, nonlocal parameter, stacking sequence,and medium elasticity on the vibration frequency and critical buckling load of the 2 D decagonal QC nanoplates. The results show that the effects of the quasiperiodic direction on the vibration frequency and critical buckling load depend on the length-to-width ratio of the nanoplates. The thickness of the nanoplate and the elasticity of the surrounding medium can be adjusted for optimal frequency and critical buckling load of the nanoplate.This feature is useful since the frequency and critical buckling load of the 2 D decagonal QCs as coating materials of plate structures can now be tuned as one desire.

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel physics.The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance.The strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2D semiconductors.In this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors,such as Janus 2D and 2D-Xene structures.Moreover,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized.Furthermore,the applications of strain-engineered 2D semiconductors in sensors,photodetectors and nanogenerators are also highlighted.At last,we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.

Field-effect transistors based on two-dimensional materials for logic applications

Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.

Thermal transport in semiconductor nanostructures, graphene,and related two-dimensional materials

We review experimental and theoretical results on thermal transport in semiconductor nanostructures（multilayer thin films, core/shell and segmented nanowires）, single-and few-layer graphene, hexagonal boron nitride, molybdenum disulfide, and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional（2 D） materials on temperature, flake size, defect concentration, edge roughness, and strain is analyzed.