本文基于密度泛函理论(DFT)的第一性原理计算了W、Mn、V、Ti替位掺杂二维MoSi_(2)N_(4)后的几何结构、电子结构以及光学性质的变化.电子结构分析表明W、Mn、W、Ti替位掺杂二维MoSi_(2)N_(4)后的禁带宽度分别为1.806 e V、1.003 e V、1.2...本文基于密度泛函理论(DFT)的第一性原理计算了W、Mn、V、Ti替位掺杂二维MoSi_(2)N_(4)后的几何结构、电子结构以及光学性质的变化.电子结构分析表明W、Mn、W、Ti替位掺杂二维MoSi_(2)N_(4)后的禁带宽度分别为1.806 e V、1.003 e V、1.218 e V和1.373 e V;四种过渡金属掺杂后MoSi_(2)N_(4)的带隙类型没有发生改变,均为间接带隙半导体;W掺杂后的杂质能级靠近价带顶,费米能级靠近价带顶,为p型半导体,杂质能级为受主能级;Mn掺杂后的杂质能级靠近导带底,费米能级靠近导带底,为n型半导体;V和Ti掺杂后杂质能级位于费米能级附近,为复合中心;光学性质分析表明,在2 e V~4 e V的能量区间内,W掺杂结构的吸收波长为336 nm,体系发生红移;Mn、V和Ti替位掺杂后的吸收波长分别为320 nm、358 nm和338 nm,且掺杂体系均发生蓝移.展开更多
Recently,the newly synthesized septuple-atomic layer two-dimensional(2D)material MoSi_(2)N_(4)(MSN)has attracted attention worldwide.Our work delves into the effect of vacancies and external electric fields on the ele...Recently,the newly synthesized septuple-atomic layer two-dimensional(2D)material MoSi_(2)N_(4)(MSN)has attracted attention worldwide.Our work delves into the effect of vacancies and external electric fields on the electronic properties of the MSN/graphene(Gr)heterostructure using first-principles calculation.We find that four types of defective structures,N-in,N-out,Si and Mo vacancy defects of monolayer MSN and MSN/Gr heterostructure are stable in air.Moreover,vacancy defects can effectively modulate the charge transfer at the interface of the MSN/Gr heterostructure as well as the work function of the pristine monolayer MSN and MSN/Gr heterostructure.Finally,the application of an external electric field enables the dynamic switching between n-type and p-type Schottky contacts.Our work may offer the possibility of exceeding the capabilities of conventional Schottky diodes based on MSN/Gr heterostructures.展开更多
Experimentally synthesized MoSi_(2)N_(4)(Science 369 670(2020)) is a piezoelectric semiconductor. Here, we systematically study the large biaxial(isotropic) strain effects(0.90–1.10) on electronic structures and tran...Experimentally synthesized MoSi_(2)N_(4)(Science 369 670(2020)) is a piezoelectric semiconductor. Here, we systematically study the large biaxial(isotropic) strain effects(0.90–1.10) on electronic structures and transport coefficients of monolayer MoSi_(2)N_(4) by density functional theory(DFT). With a/a0 from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum(CBM). Calculated results show that the MoSi_(2)N_(4) monolayer is mechanically stable in the considered strain range. It is found that the spin-orbital coupling(SOC) effects on Seebeck coefficient depend on the strain. In unstrained MoSi_(2)N_(4), the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied,for example, 0.96 strain. The compressive strain can change relative position and numbers of conduction band extrema(CBE), and then the strength of conduction bands convergence can be enhanced, to the benefit of n-type ZT_e. Only about0.96 strain can effectively improve n-type ZT_e. Our works imply that strain can effectively tune the electronic structures and transport coefficients of monolayer MoSi_(2)N_(4), and can motivate farther experimental exploration.展开更多
Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this pap...Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.展开更多
Retaining the ultrathin structure of two-dimensional materials is very important for stabilizing their catalytic performances.However,aggregation and restacking are unavoidable,to some extent,due to the van der Waals ...Retaining the ultrathin structure of two-dimensional materials is very important for stabilizing their catalytic performances.However,aggregation and restacking are unavoidable,to some extent,due to the van der Waals interlayer interaction of two-dimensional materials.Here,we address this challenge by preparing an origami accordion structure of ultrathin twodimensional graphitized carbon nitride(oa-C_(3)N_(4))with rich vacancies.This novel structured oa-C_(3)N_(4) shows exceptional photocatalytic activity for the CO_(2) reduction reaction,which is 8.1 times that of the pristine C_(3)N_(4).The unique structure not only prevents restacking but also increases light harvesting and the density of vacancy defects,which leads to modification of the electronic structure,regulation of the CO_(2) adsorption energy,and a decrease in the energy barrier of the carbon dioxide to carboxylic acid intermediate reaction.This study provides a new avenue for the development of stable highperformance two-dimensional catalytic materials.展开更多
The Pt-free photocatalytic hydrogen evolution(PHE)has been the focus in the photocatalytic field.The catalytic system with the large accessible surface and good mass-transfer ability,as well as the intimate combinatio...The Pt-free photocatalytic hydrogen evolution(PHE)has been the focus in the photocatalytic field.The catalytic system with the large accessible surface and good mass-transfer ability,as well as the intimate combination of co-catalyst with semiconductor is promising for the promotion of the application.Here,we have reported the design of the two-dimensional(2D)porous C_(3)N_(4)nanosheets(PCN NS)intimately combined with few-layered MoS_(2)for the high-effective Pt-free PHE.The PCN NS were synthesized based on peeling the melamine–cyanuric acid precursor(MC precursor)by the triphenylphosphine(TP)molecular followed by the calcination,mainly due to the matched size of the(100)plane distance of the precursor(0.8 nm)and the height of TP molecular.The porous structure is favorable for the mass-transfer and the 2D structure having large accessible surface,both of which are positive to promote the photocatalytic ability.The few-layered MoS_(2)are grown on PCN to give 2D MoS_(2)/PCN composites based on anchoring phosphomolybdic acid(PMo_(12))cluster on polyetherimide(PEI)-modified PCN followed by the vulcanization.The few-layered MoS_(2)have abundant edge active sites,and its intimate combination with porous PCN NS is favorable for the faster transfer and separation of the electrons.The characterization together with the advantage of 2D porous structure can largely promote the photocatalytic ability.The MoS_(2)/PCN showed good PHE activity with the high hydrogen production activity of 4,270.8μmol·h^(−1)·g^(−1)under the simulated sunlight condition(AM1.5),which was 7.9 times of the corresponding MoS_(2)/bulk C_(3)N_(4)and 12.7 times of the 1 wt.%Pt/bulk C_(3)N_(4).The study is potentially meaningful for the synthesis of PCN-based catalytic systems.展开更多
Single-layer MoSi_(2)N_(4),a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to ...Single-layer MoSi_(2)N_(4),a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to investigate the electronic,optical,and photocatalytic properties of alkali-metal(Li,Na,and K)-adsorbed MoSi_(2)N_(4) monolayer.The electronic structure analysis shows that pristine MoSi_(2)N_(4) monolayer exhibits an indirect bandgap(E_(g)=1.89 eV).By contrast,the bandgaps of one Li-,Na-,and K-adsorbed MoSi_(2)N_(4) monolayer are 1.73 eV,1.61 eV,and 1.75 eV,respectively.Moreover,the work function of MoSi_(2)N_(4) monolayer(4.80 eV)is significantly reduced after the adsorption of alkali metal atoms.The work functions of one Li-,Na-,and K-adsorbed MoSi_(2)N_(4) monolayer are 1.50 eV,1.43 eV,and 2.03 eV,respectively.Then,optical investigations indicate that alkali metal adsorption processes substantially increase the visible light absorption range and coefficient of MoSi_(2)N_(4) monolayer.Furthermore,based on redox potential variations after alkali metals are adsorbed,Li-and Na-adsorbed MoSi_(2)N_(4) monolayers are more suitable for the water splitting photocatalytic process,and the Li-adsorbed case shows the highest potential application for CO_(2) reduction.In conclusion,alkali-metal-adsorbed MoSi_(2)N_(4) monolayer exhibits promising applications as novel optoelectronic devices and photocatalytic materials due to its unique physical and chemical properties.展开更多
Two-dimensional(2D)semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers.Herein,a novel CoWO_(4)/g-C_(3)N_(4)(CWO/CN)p–n junction was synthesized us...Two-dimensional(2D)semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers.Herein,a novel CoWO_(4)/g-C_(3)N_(4)(CWO/CN)p–n junction was synthesized using an electrostatic selfassembly method.The constructed 2D/2D p–n heterostructure had a rich hetero-interface,increased charge density,and fast separation efficiency of photoinduced carriers.The in-situ Kelvin probe force microscopy confirmed that the separation pathway of photoinduced carriers through the interface obeyed an II-scheme charge transfer mechanism.Experimental results and density functional theory calculations indicated the differences of work function between CWO and CN induced the generation of built-in electric field,ensuring an efficient separation and transfer process of photoinduced carriers.Under the optimized conditions,the CWO/CN heterojunction displayed enhanced photocatalytic H_(2)generation activity under full spectrum and visible lights irradiation,respectively.Our study provides a novel approach to design 2D/2D hetero-structured photocatalysts based on p–n type semiconductor for photocatalytic H_(2)generation.展开更多
Z-scheme heterojunction catalysts have received great attention due to their efficient ability to separate electrons and holes.Here,using the first-principles calculations,we designed a series of promising two-dimensi...Z-scheme heterojunction catalysts have received great attention due to their efficient ability to separate electrons and holes.Here,using the first-principles calculations,we designed a series of promising two-dimensional(2D)/2D Z-scheme systems with interlayer inequivalent,including MoSi_(2)N_(4)/MoSi_(2)N_(4),WSi_(2)N_(4)/WSi_(2)N_(4) and MoSi_(2)N_(4)/WSi_(2)N_(4).Molecular dynamics simulation and phonon dispersion show that they have sufficient environmental stability.The inequivalent structure between the layers caused the directional formation of built-in potentials,driving the transfer of net charge between layers,which greatly enhanced their catalytic activity.The smaller band gap and enhanced light absorption performance further revealed their perfect catalytic performance.Moreover,all they met the redox potential requirements of water splitting in a range of pH 0-7,demonstrate they are very remarkable photocatalysts for H_(2)evolution.More interestingly,they also have good sliding ferroelectricity,and the opposite built-in potential can be obtained by sliding between layers,which is very promising for future nanogenerators.Our works may provide new insights into energy conversion devices.展开更多
The density functional theory(DFT)calculations have been performed to investigate the catalytic properties of monolayer MoSi_(2)N_(4) for hydrogen evolution reaction(HER).The DFT results show that similar to the major...The density functional theory(DFT)calculations have been performed to investigate the catalytic properties of monolayer MoSi_(2)N_(4) for hydrogen evolution reaction(HER).The DFT results show that similar to the majority of other two-dimensional(2D)materials,the pristine MoSi_(2)N_(4) is inert for HER due to its weak affinity toward hydrogen,while monolayer MoSi_(2)N_(4-x)(x=0–0.25)exhibits the highly desirable HER catalytic activities by introducing surface nitrogen vacancy(NV).The predicted HER overpotential(0–60 mV)of monolayer MoSi_(2)N_(4-x) is lower than that(90 mV)of noble metal Pt,when the concentration of surface NV is lower than 5.6%.Electronic structure calculations show that the spin-polarized states appear around the Fermi level after introducing surface NV,thus making the surface NV on 2D MoSi_(2)N_(4) a quite suitable site for HER.Moreover,the HER activity of MoSi_(2)N_(4-x) is highly dependent on the surface NV concentration,which can be further related to the center of Si-3p band.Our results demonstrate that the newly discovered 2D MoSi_(2)N_(4) can be served as a promising electrocatalyst for HER via appropriate defect engineering.展开更多
Nanomaterials integrated surface acoustic wave(SAW)gas sensing technology has emerged as a promising candidate for realtime toxic gas sensing applications for environmental and human health safety.However,the developm...Nanomaterials integrated surface acoustic wave(SAW)gas sensing technology has emerged as a promising candidate for realtime toxic gas sensing applications for environmental and human health safety.However,the development of novel chemical interface based on two-dimensional(2D)sensing materials for SAW sensors for the rapid and sensitive detection of NH_(3)gas at room temperature(RT)still remains challenging.Herein,we report a highly selective RT NH_(3)gas sensor based on sulfur-doped graphitic carbon nitride quantum dots(S@g-C_(3)N_(4)QD)coated langasite(LGS)SAW sensor with enhanced sensitivity and recovery rate under ultraviolet(UV)illumination.Fascinatingly,the sensitivity of the S@g-C_(3)N_(4)QD/LGS SAW sensor to NH_(3)(500 ppb)at RT is dramatically enhanced by~4.5-fold with a low detection limit(~85 ppb),high selectivity,excellent reproducibility,fast response/recovery time(70 s/79 s)under UV activation(365 nm)as compared to dark condition.Additionally,the proposed sensor exhibited augmented NH_(3)detection capability across the broad range of relative humidity(20%–80%).Such remarkable gas sensing performances of the as-prepared sensor to NH_(3)are attributed to the high surface area,enhanced functional groups,sulfur defects,UV photogenerated charge carriers,facile charge transfer in the S@g-C_(3)N_(4)QD sensing layer,which further helps to improve the gas molecules adsorption that causes the increase in conductivity,resulting in larger frequency responses.The gas sensing mechanism of S@g-C_(3)N_(4)QD/LGS SAW sensor is ascribed to the enhanced electroacoustic effect,which is supported by the correlation of resistive type and COMSOL Multiphysics simulation studies.We envisage that the present work paves a promising strategy to develop the next generation 2D g-C_(3)N_(4)based high responsive RT SAW gas sensors.展开更多
文摘本文基于密度泛函理论(DFT)的第一性原理计算了W、Mn、V、Ti替位掺杂二维MoSi_(2)N_(4)后的几何结构、电子结构以及光学性质的变化.电子结构分析表明W、Mn、W、Ti替位掺杂二维MoSi_(2)N_(4)后的禁带宽度分别为1.806 e V、1.003 e V、1.218 e V和1.373 e V;四种过渡金属掺杂后MoSi_(2)N_(4)的带隙类型没有发生改变,均为间接带隙半导体;W掺杂后的杂质能级靠近价带顶,费米能级靠近价带顶,为p型半导体,杂质能级为受主能级;Mn掺杂后的杂质能级靠近导带底,费米能级靠近导带底,为n型半导体;V和Ti掺杂后杂质能级位于费米能级附近,为复合中心;光学性质分析表明,在2 e V~4 e V的能量区间内,W掺杂结构的吸收波长为336 nm,体系发生红移;Mn、V和Ti替位掺杂后的吸收波长分别为320 nm、358 nm和338 nm,且掺杂体系均发生蓝移.
基金Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University(Grant No.2020-520000-83-01-324061)the National Natural Science Foundation of China(Grant No.61264004)the High-level Creative Talent Training Program in Guizhou Province of China(Grant No.[2015]4015).
文摘Recently,the newly synthesized septuple-atomic layer two-dimensional(2D)material MoSi_(2)N_(4)(MSN)has attracted attention worldwide.Our work delves into the effect of vacancies and external electric fields on the electronic properties of the MSN/graphene(Gr)heterostructure using first-principles calculation.We find that four types of defective structures,N-in,N-out,Si and Mo vacancy defects of monolayer MSN and MSN/Gr heterostructure are stable in air.Moreover,vacancy defects can effectively modulate the charge transfer at the interface of the MSN/Gr heterostructure as well as the work function of the pristine monolayer MSN and MSN/Gr heterostructure.Finally,the application of an external electric field enables the dynamic switching between n-type and p-type Schottky contacts.Our work may offer the possibility of exceeding the capabilities of conventional Schottky diodes based on MSN/Gr heterostructures.
基金supported by the Natural Science Basis Research Plan in Shaanxi Province of China (Grant No. 2021JM-456)。
文摘Experimentally synthesized MoSi_(2)N_(4)(Science 369 670(2020)) is a piezoelectric semiconductor. Here, we systematically study the large biaxial(isotropic) strain effects(0.90–1.10) on electronic structures and transport coefficients of monolayer MoSi_(2)N_(4) by density functional theory(DFT). With a/a0 from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum(CBM). Calculated results show that the MoSi_(2)N_(4) monolayer is mechanically stable in the considered strain range. It is found that the spin-orbital coupling(SOC) effects on Seebeck coefficient depend on the strain. In unstrained MoSi_(2)N_(4), the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied,for example, 0.96 strain. The compressive strain can change relative position and numbers of conduction band extrema(CBE), and then the strength of conduction bands convergence can be enhanced, to the benefit of n-type ZT_e. Only about0.96 strain can effectively improve n-type ZT_e. Our works imply that strain can effectively tune the electronic structures and transport coefficients of monolayer MoSi_(2)N_(4), and can motivate farther experimental exploration.
基金Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University,China(Grant No.2020-52000083-01-324061)the National Natural Science Foundation of China(Grant No.61264004)the High-level Creative Talent Training Program in Guizhou Province,China(Grant No.[2015]4015)。
文摘Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.
基金Jilin Province Science and Technology Development Program,Grant/Award Number:20190201233JCProject for Self-innovation Capability Construction of Jilin Province Development and Reform Commission,Grant/Award Number:2021C026+3 种基金Program for JLU Science and Technology Innovative Research Team,Grant/Award Numbers:JLUSTIRT,2017TD-09National Natural Science Foundation of China,Grant/Award Numbers:12034002,51872116Natural Science Funds for Distinguished Young Scholar of Heilongjiang Province,Grant/Award Number:JC2018004Excellent Young Foundation of Harbin Normal University,Grant/Award Number:XKYQ201304。
文摘Retaining the ultrathin structure of two-dimensional materials is very important for stabilizing their catalytic performances.However,aggregation and restacking are unavoidable,to some extent,due to the van der Waals interlayer interaction of two-dimensional materials.Here,we address this challenge by preparing an origami accordion structure of ultrathin twodimensional graphitized carbon nitride(oa-C_(3)N_(4))with rich vacancies.This novel structured oa-C_(3)N_(4) shows exceptional photocatalytic activity for the CO_(2) reduction reaction,which is 8.1 times that of the pristine C_(3)N_(4).The unique structure not only prevents restacking but also increases light harvesting and the density of vacancy defects,which leads to modification of the electronic structure,regulation of the CO_(2) adsorption energy,and a decrease in the energy barrier of the carbon dioxide to carboxylic acid intermediate reaction.This study provides a new avenue for the development of stable highperformance two-dimensional catalytic materials.
基金supported by the National Key R&D Program of China(No.2018YFB1502401)the National Natural Science Foundation of China(Nos.91961111,U20A20250,and 21901064)+3 种基金the Natural Science Foundation of Heilongjiang Province(No.ZD2021B003)the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.UNPYSCT-2020004)the Basic Research Fund of Heilongjiang University in Heilongjiang Province(No.2021-KYYWF-0039)Open Project of Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education.
文摘The Pt-free photocatalytic hydrogen evolution(PHE)has been the focus in the photocatalytic field.The catalytic system with the large accessible surface and good mass-transfer ability,as well as the intimate combination of co-catalyst with semiconductor is promising for the promotion of the application.Here,we have reported the design of the two-dimensional(2D)porous C_(3)N_(4)nanosheets(PCN NS)intimately combined with few-layered MoS_(2)for the high-effective Pt-free PHE.The PCN NS were synthesized based on peeling the melamine–cyanuric acid precursor(MC precursor)by the triphenylphosphine(TP)molecular followed by the calcination,mainly due to the matched size of the(100)plane distance of the precursor(0.8 nm)and the height of TP molecular.The porous structure is favorable for the mass-transfer and the 2D structure having large accessible surface,both of which are positive to promote the photocatalytic ability.The few-layered MoS_(2)are grown on PCN to give 2D MoS_(2)/PCN composites based on anchoring phosphomolybdic acid(PMo_(12))cluster on polyetherimide(PEI)-modified PCN followed by the vulcanization.The few-layered MoS_(2)have abundant edge active sites,and its intimate combination with porous PCN NS is favorable for the faster transfer and separation of the electrons.The characterization together with the advantage of 2D porous structure can largely promote the photocatalytic ability.The MoS_(2)/PCN showed good PHE activity with the high hydrogen production activity of 4,270.8μmol·h^(−1)·g^(−1)under the simulated sunlight condition(AM1.5),which was 7.9 times of the corresponding MoS_(2)/bulk C_(3)N_(4)and 12.7 times of the 1 wt.%Pt/bulk C_(3)N_(4).The study is potentially meaningful for the synthesis of PCN-based catalytic systems.
基金This research was supported by the National Natural Science Foundation of China(Grant No.11774054,12075036)the talents and high-level paper cultivation plan from the School of Optoelectronic Engineering,Yangtze University.
文摘Single-layer MoSi_(2)N_(4),a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to investigate the electronic,optical,and photocatalytic properties of alkali-metal(Li,Na,and K)-adsorbed MoSi_(2)N_(4) monolayer.The electronic structure analysis shows that pristine MoSi_(2)N_(4) monolayer exhibits an indirect bandgap(E_(g)=1.89 eV).By contrast,the bandgaps of one Li-,Na-,and K-adsorbed MoSi_(2)N_(4) monolayer are 1.73 eV,1.61 eV,and 1.75 eV,respectively.Moreover,the work function of MoSi_(2)N_(4) monolayer(4.80 eV)is significantly reduced after the adsorption of alkali metal atoms.The work functions of one Li-,Na-,and K-adsorbed MoSi_(2)N_(4) monolayer are 1.50 eV,1.43 eV,and 2.03 eV,respectively.Then,optical investigations indicate that alkali metal adsorption processes substantially increase the visible light absorption range and coefficient of MoSi_(2)N_(4) monolayer.Furthermore,based on redox potential variations after alkali metals are adsorbed,Li-and Na-adsorbed MoSi_(2)N_(4) monolayers are more suitable for the water splitting photocatalytic process,and the Li-adsorbed case shows the highest potential application for CO_(2) reduction.In conclusion,alkali-metal-adsorbed MoSi_(2)N_(4) monolayer exhibits promising applications as novel optoelectronic devices and photocatalytic materials due to its unique physical and chemical properties.
基金Outstanding Talent Research Fund of Zhengzhou University,China Postdoctoral Science Foundation(Nos.2020TQ0277 and 2020M682328)Central Plains Science and Technology Innovation Leader Project(No.214200510006)Postdoctoral Science Foundation of Henan province(No.202002010).
文摘Two-dimensional(2D)semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers.Herein,a novel CoWO_(4)/g-C_(3)N_(4)(CWO/CN)p–n junction was synthesized using an electrostatic selfassembly method.The constructed 2D/2D p–n heterostructure had a rich hetero-interface,increased charge density,and fast separation efficiency of photoinduced carriers.The in-situ Kelvin probe force microscopy confirmed that the separation pathway of photoinduced carriers through the interface obeyed an II-scheme charge transfer mechanism.Experimental results and density functional theory calculations indicated the differences of work function between CWO and CN induced the generation of built-in electric field,ensuring an efficient separation and transfer process of photoinduced carriers.Under the optimized conditions,the CWO/CN heterojunction displayed enhanced photocatalytic H_(2)generation activity under full spectrum and visible lights irradiation,respectively.Our study provides a novel approach to design 2D/2D hetero-structured photocatalysts based on p–n type semiconductor for photocatalytic H_(2)generation.
基金financially supported by the National Natural Science Foundation of China(Grant No.11764018)the Natural Science Foundation of Jiangxi Province(Grant No.20202ACBL211004)the Science and Technology Planning Project of Ganzhou City。
文摘Z-scheme heterojunction catalysts have received great attention due to their efficient ability to separate electrons and holes.Here,using the first-principles calculations,we designed a series of promising two-dimensional(2D)/2D Z-scheme systems with interlayer inequivalent,including MoSi_(2)N_(4)/MoSi_(2)N_(4),WSi_(2)N_(4)/WSi_(2)N_(4) and MoSi_(2)N_(4)/WSi_(2)N_(4).Molecular dynamics simulation and phonon dispersion show that they have sufficient environmental stability.The inequivalent structure between the layers caused the directional formation of built-in potentials,driving the transfer of net charge between layers,which greatly enhanced their catalytic activity.The smaller band gap and enhanced light absorption performance further revealed their perfect catalytic performance.Moreover,all they met the redox potential requirements of water splitting in a range of pH 0-7,demonstrate they are very remarkable photocatalysts for H_(2)evolution.More interestingly,they also have good sliding ferroelectricity,and the opposite built-in potential can be obtained by sliding between layers,which is very promising for future nanogenerators.Our works may provide new insights into energy conversion devices.
基金supported by the National Natural Science Foundation of China(Nos.51972312 and 51472249)
文摘The density functional theory(DFT)calculations have been performed to investigate the catalytic properties of monolayer MoSi_(2)N_(4) for hydrogen evolution reaction(HER).The DFT results show that similar to the majority of other two-dimensional(2D)materials,the pristine MoSi_(2)N_(4) is inert for HER due to its weak affinity toward hydrogen,while monolayer MoSi_(2)N_(4-x)(x=0–0.25)exhibits the highly desirable HER catalytic activities by introducing surface nitrogen vacancy(NV).The predicted HER overpotential(0–60 mV)of monolayer MoSi_(2)N_(4-x) is lower than that(90 mV)of noble metal Pt,when the concentration of surface NV is lower than 5.6%.Electronic structure calculations show that the spin-polarized states appear around the Fermi level after introducing surface NV,thus making the surface NV on 2D MoSi_(2)N_(4) a quite suitable site for HER.Moreover,the HER activity of MoSi_(2)N_(4-x) is highly dependent on the surface NV concentration,which can be further related to the center of Si-3p band.Our results demonstrate that the newly discovered 2D MoSi_(2)N_(4) can be served as a promising electrocatalyst for HER via appropriate defect engineering.
基金the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.2020R1A2C2013385)Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(No.NRF-2020R1A6A1A03047771)Korea Institute of Planning and Evaluation for Technology in Food,Agriculture and Forestry(IPET),Korea Smart Farm Research and Development Foundation(KosFarm)through Smart Farm Innovation Technology Development Program,funded by Ministry of Agriculture,Food,and Rural Affairs(MAFRA)and Ministry of Science and ICT(MSIT),Rural Development Administration(RDA)(No.421029-4).
文摘Nanomaterials integrated surface acoustic wave(SAW)gas sensing technology has emerged as a promising candidate for realtime toxic gas sensing applications for environmental and human health safety.However,the development of novel chemical interface based on two-dimensional(2D)sensing materials for SAW sensors for the rapid and sensitive detection of NH_(3)gas at room temperature(RT)still remains challenging.Herein,we report a highly selective RT NH_(3)gas sensor based on sulfur-doped graphitic carbon nitride quantum dots(S@g-C_(3)N_(4)QD)coated langasite(LGS)SAW sensor with enhanced sensitivity and recovery rate under ultraviolet(UV)illumination.Fascinatingly,the sensitivity of the S@g-C_(3)N_(4)QD/LGS SAW sensor to NH_(3)(500 ppb)at RT is dramatically enhanced by~4.5-fold with a low detection limit(~85 ppb),high selectivity,excellent reproducibility,fast response/recovery time(70 s/79 s)under UV activation(365 nm)as compared to dark condition.Additionally,the proposed sensor exhibited augmented NH_(3)detection capability across the broad range of relative humidity(20%–80%).Such remarkable gas sensing performances of the as-prepared sensor to NH_(3)are attributed to the high surface area,enhanced functional groups,sulfur defects,UV photogenerated charge carriers,facile charge transfer in the S@g-C_(3)N_(4)QD sensing layer,which further helps to improve the gas molecules adsorption that causes the increase in conductivity,resulting in larger frequency responses.The gas sensing mechanism of S@g-C_(3)N_(4)QD/LGS SAW sensor is ascribed to the enhanced electroacoustic effect,which is supported by the correlation of resistive type and COMSOL Multiphysics simulation studies.We envisage that the present work paves a promising strategy to develop the next generation 2D g-C_(3)N_(4)based high responsive RT SAW gas sensors.