Fiber Coupling of Laser Diode Bar to M ultimode Fiber Array

A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.

Structured mirror array for two-dimensional collimation of a chromium beam in atom lithography

Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions.The best collimation is obtained when the laser red detunes by natural line-width of transition 7S3 → 7P40 of the chromium atom.The collimation ratio is 0.45 vertically（in x axis）,and it is 0.55 horizontally（in y axis）.The theoretical model is also simulated,and success of our structured mirror array is achieved.

Quantification of six bioactive compounds in Zhenqi Fuzheng preparation by high-performance liquid chromatography coupled with diode array detector and evaporative light scattering detector

A simple and accurate high-performance liquid chromatography（HPLC）coupled with diode array detector（DAD）and evaporative light scattering detector（ELSD）was established for the determination of six bioactive compounds in Zhenqi Fuzheng preparation（ZFP）.The monitoring wavelengths were 254,275 and 328 nm.Under the optimum conditions,good separation was achieved,and the assay was fully validated in respect of precision,repeatability and accuracy.The proposed method was successfully applied to quantify the six ingredients in 31 batches of ZFP samples and evaluate the variation by hierarchical cluster analysis（HCA）,which demonstrated significant variations on the content of these compounds in the samples from different manufacturers with different preparation procedures.The developed HPLC method can be used as a valid analytical method to evaluate the intrinsic quality of this preparation.

Design of Diode Type Un-Cooled Infrared Focal Plane Array Readout Circuit

The diode infrared focal plane array uses the silicon diodes as a sensitive device for infrared signal measurement. By the infrared radiation, the infrared focal plane can produces small voltage signals. For the traditional readout circuit structures are designed to process current signals, they cannot be applied to it. In this paper, a new readout circuit for the diode un-cooled infrared focal plane array is developed. The principle of detector array signal readout and small signal amplification is given in detail. The readout circuit is designed and simulated by using the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 μm complementary metal-oxide-semiconductor transistor （CMOS） technology library. Cadence Spectre simulation results show that the scheme can be applied to the CMOS readout integrated circuit （ROIC） with a larger array, such as 320×240 size array.

H_α/ D_α Measurements Based on Photo Diode Array in the HT-7 Tokamak

Photo Diode Array (PDA) has been successfully applied in HT-7 tokamak experiments. The PDA system is almost free of electromagnetic interference from the machine. The system is compact and inexpensive, and it is convenient to be arranged in experiment. With the PDA system, the particle confinement time (τp) has been systematically investigated. The relations such as τp on the center-line-averaged electron density (ne), τp on plasma current (Ip), and τp, on the toroidal magnetic field (Bt) have been obtained. The particle confinement under the Ion Berstain Wave (IBW) Heating has also been measured and analyzed.

Thermal analysis of GaN-based laser diode mini-array

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

Comparison of Gamma Pass Rate between the Dose-to-Water and Dose-to-Medium Reporting Modes for Patient-Specific QA Using a Helical Diode Array Dosimeter with a Fixed Phantom Density

Introduction: To compare the measured dose distributions to calculated ones in dose-to-water (Dw) and dose-to-medium (Dm) reporting modes for simple plans and patient-specific intensity modulated radiation therapy (IMRT) and volumetric modulated arc therapy (VMAT) plans using ArcCHECK with a fixed phantom density. Methods: The recommended density value of 1.18 g/cm3 for Acuros XB and X-ray voxel Monte Carlo was assigned to ArcCHECK on CT images. A total of 45 simple plans, including a 1-field plan, a 3-field plan, a 4-field plan, a half-arc plan from 270° to 90°, and a full-arc plan, were assessed. Subsequently, the patient-specific 96 IMRT and VMAT plans were evaluated. Gamma analysis with a 3% normalized global dose error and a 3 mm distance-to-agreement criteria (γ3%G/3mm) was performed in the Dw and Dm. The change in γ3%G/3mm between Dw and Dm were statistically analyzed using JMPPro11 software. Results: The median values of γ3%G/3mm for all simple plans for Dw and Dm were 98.1% (range, 75.2% - 100%) and 95.5% (range, 23.7% - 100%), respectively (p 0.01). In the patient-specific IMRT and VMAT plans, the median values of γ3%G/3mm for Dw and Dm were 98.6% (range, 90.1% - 100%) and 90.5% (range, 38.5% - 97.2%), respectively (p 0.01). Conclusion: Our results showed that the calculated and measured dose distributions were in good agreement for Dw, but were not for Dm. From the viewpoint of the rationale of dosimetry, Dw shows better agreement with measured dose distribution when using the fixedphantom density recommended by the vendor.

Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array

The Ga N high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the coupling efficiency between two-dimensional(2D)plasmons and THz radiation.In this work,we investigate the plasma oscillation,electromagnetic radiation,and the integration characteristics of Ga N HEMT targeting at a high THz radiation power source.The quantitative radiation power and directivity are obtained for integrated Ga N HEMT array with different array periods and element numbers.With the same initial plasma oscillation phase among the HEMT units,the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8electromagnetic wavelength.In addition,the radiation power of the HEMT array varies almost linearly with the element number,the smaller array period can lead to the greater radiation power.It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power.Increasing the element number can improve both the radiation directivity and power.We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency,which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements.The study of the radiation power amplification of the one-dimensional(1D)Ga N HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.

Facet Reflection Coefficient of Phase-lockedDiode Laser Array in an External Cavity

A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.

10 W QCW operation of a proton implanted GaAlAs diode laser array

We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.

Field Size Evaluation with a High Resolution 2D Diode Array for Variable-Aperture Collimators Used in Robotic Radiosurgery

Robotic radiosurgery/Radiotherapy is increasingly adopted in clinics, and quality assurance (QA) of CyberKnife’s variable-aperture IrisTM collimators requires sub-millimeter precision. Conventional film-based QA for the 12 IrisTM cone sizes (ranging from 5 to 60 mm) is both time consuming (120 minutes for all or 30 minutes for 3 cone sizes) and highly experience dependent. To improve the efficiency, a high-resolution 2D diode detector array, sampling every 2.5 mm, was evaluated for IrisTM aperture size QA. This study focused on a spatial frequency analysis, a dose profile reconstruction, and a sensitivity study to beam size variances. Dose profiles of the 12 cones scanned with a high-resolution diode in a water tank were utilized as the gold standard for comparison. Spatial Fourier transform of these profiles were analyzed to explore applicable sampling frequency. Next, the dose profiles were artificially sampled with a 2.5 mm gap, and then interpolated using a Python-based cubic B-spline. Finally, sensitivity of the diode array system to various field sizes was measured by changing source to detector distance. We found, utilizing the diodes system, QA time was reduced to less than 10 minutes. Spatial frequency of the dose profile showed little contribution beyond 0.2 mm-1, so a Nyquist sampling of 0.4 mm-1 is appropriate for dose verification, corresponding to a 2.5 mm gap. Dose profiles were reconstructed using Cubic B-spline with good agreements to nominal for cones 7.5 mm and larger. The measured IrisTM size using the SRS MapCheck had a standard error of ±0.12 mm. Primarily, the 2D Diode array with a spatial resolution 0.4 mm-1 is appropriate for dose verification for these cones above 7.5 mm, and its application would substantially improve IrisTM QA efficiency.

Validation of Metformin Hydrochloride in Human Plasma by HPLC-Photo Diode Array （PDA） for Application of Bioequivalence Study

A sensitive and specific high performance liquid chromatography （HPLC） method was developed and validated for the simultaneous determination of metformin hydrochloride （HCI） in human plasma. The HPLC method consists of isocratic eluation with a mixture of 60% buffer （10 mM sodium dihyrogenphosphate-10 mM sodium dodecyl sulphate） and 40% acetonitrile with final pH 7.0 with flow rate of 1.0 mL/min on a Kromasil~ Akzo Nobel RP-18 （4.6 mm ID ~ 250 mm, 5 ~tm） column at an ambient temperature. Photo diode array detection was performed in program mode at 234 rim. The analyte and diazepam as internal standard （IS） were extracted from plasma using 10% trichloroacetic acid. The assay was linear over the therapeutic concentration range of 20-2,500 ng/mL for metformin HCI with correlation coefficient of r = 0.9999. Limit of quantitation was 20 ng/mL. The results obtained for intraJinter day accuracy and precision complied very well with the generally accepted criteria for bio-analytical assay. The method was applied to bioequivalence （BE） study of metformin HCI in healthy Indonesian volunteers after treatment with 750 mg XR metformin HCI. This BE study shows that the two formulations are equivalent so that they were therapeutically interchangeable for each other.

Advances and Challenges in Two‑Dimensional Organic–Inorganic Hybrid Perovskites Toward High‑Performance Light‑Emitting Diodes

Two-dimensional(2D)perovskites are known as one of the most promising luminescent materials due to their structural diversity and outstanding optoelectronic properties.Compared with 3D perovskites,2D perovskites have natural quantum well structures,large exciton binding energy(Eb)and outstanding thermal stability,which shows great potential in the next-generation displays and solidstate lighting.In this review,the fundamental structure,photophysical and electrical properties of 2D perovskite films were illustrated systematically.Based on the advantages of 2D perovskites,such as special energy funnel process,ultrafast energy transfer,dense film and low efficiency roll-off,the remarkable achievements of 2D perovskite light-emitting diodes(PeLEDs)are summarized,and exciting challenges of 2D perovskite are also discussed.An outlook on further improving the efficiency of pure-blue PeLEDs,enhancing the operational stability of PeLEDs and reducing the toxicity to push this field forward was also provided.This review provides an overview of the recent developments of 2D perovskite materials and LED applications,and outlining challenges for achieving the high-performance devices.

Experimental Investigation of Two-Dimensional Velocity on the 90°Double Bend Pipe Flow Using Ultrasound Technique

An experimental investigation was performed to investigate two-dimensional axial velocity field at downstream of the 90°double bend pipe with and without inlet swirling condition. The main objectives are to find separation region and observe the influence of inlet swirling flow on the velocity fluctuation using ultrasound technique. The experiments were carried out in the pipe at Reynolds number Re = 1 × 104. In case of inlet swirling flow condition, a rotary swirler was used as swirling generator, and the swirl number was setup S = 1. The ultrasonic measurements were taken at four downstream locations of the second bend pipe. Phased Array Ultrasonic Velocity Profiler (Phased Array UVP) technique was applied to obtain the two-dimensional velocity of the fluid and the axial and tangential velocity fluctuation. It was found that the secondary reverse flow became smaller at the downstream from the bend when the inlet condition on the first bend was swirling flow. In addition, inlet swirling condition influenced mainly on the tangential velocity fluctuation, and its maximum turbulence intensity was 40%.

Effect of One/Two-dimensional Bonding Phases on Strength and Toughness of Carbon-containing Refractories

Gaseous phases of carbon-containing and metastable oxides will be resulted from the carbonization of phenolic resin binders and the reduced reactions between C and oxides at high temperatures in carbon-containing refractories. With the in-situ catalysis technique, these gaseous phases can be transformed to one-or two-dimensional bonding phases by deposition,which is favorable for the improvement on strength and toughness of carboncontaining refractories,especially low carbon refractories. The research results reveal that：（ 1） the amorphous carbon resulted from phenolic resin can be transformed to carbon nanotubes,thus,the oxidation peak temperature is raised from 506 to 664. 6 ℃;（ 2） onedimensional whiskers of MgO or Mg Al2 O4 can be in-situ formed in MgO-C refractories, and their CMOR,CCS,rupture displacement and residual CCS（ two water quenching cycles,1 100 ℃） are increased by 66%,47%,13% and 26%,respectively;（ 3） two-dimensional array structure of flake β-SiAlON can be in-situ formed in Al2 O3-C refractories,which improves the material strength by 60% and decreases the residual strength after thermal shock by only 4. 5 MPa. It is believed that the in-situ formation of one-or two-dimensional bonding phases at high temperatures can improvethe comprehensive thermal physical properties of carboncontaining refractories,and will be the developing trend of the strengthening and toughening of low carbon-containing refractories.

A 27 GHz,simple 2-bit 1×8 phased array

This study demonstrates a simple 2-bit phased array operating at 27 GHz that supports one-dimensional beam scanning with left-handed circular polarization(LHCP).The antenna is constructed using a compact four-layer printed circuit board(PCB)structure,consisting of a 90°phase shifter layer with microstrip structures,a ground(GND)layer,a direct current(DC)control layer,and a circularly polarized annular radiation patch layer with 1-bit phase shifting.Based on the proposed unit structure,a 1×8 array with half-wavelength inter-element spacing was designed and validated.Experimental results show that the array achieves a peak gain of 10.23 dBi and is capable of beam scanning within±50°.

Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits

The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits.In this work,it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction channels.The results indicate that the dominant charge carrier type and density in black phosphorus(BP)conduction channel can be effectively modulated by the underlying cadmium sulfide(CdS)photogate layer under light illumination.This enables flexible switching of the working state between BP resistor and BP p-n diode in the designed semi-photo-gate transistor(SPGT)devices when switching the light on and off(ultra-low threshold light power).Simultaneously,the achieved BP p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic properties.That is to say,light can be employed as external stimulus to define the BP p-n junctions,and in turn the p-n junctions will further convert the light into electrical power,showing all-in-one opto-electrical interconnection properties.Moreover,the SPGT device architecture is also applicable for construction of other ambipolar semiconductor-based(WSe2-and MoTe2-based)p-n diodes.Such universal all-in-one light-triggered lateral homogeneous pn junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications.

Optimal Design of Thermal Dissipation for the Array Power LED by using the RSM with Genetic Algorithm

In accordance with the enhancement for luminous efficiency improving, LED (Light Emitting Diode) has been gradually developed by combining the characteristics of small volume, impact resistance, good reliability, long life, low power consumption with multiple purposes for energy saving and environmental protection. Therefore, the array LED has been widely applied in human livings nowadays. This study applies the finite element analysis software ANSYS to analyze the thermal behavior of the array power LED work lamp which is modeled by four same-size LED with MCPCB (Metal Core Print Circuit Board) mounted on a base heat-sink. The Flotran heat flow analysis is applied to obtain the natural convection of air coefficient, while the convection value can be confirmed by the iterative method since it is set as the boundary condition for ANSYS thermal analysis to obtain the temperature distribution, accordingly the chip junction temperature and the base heat-sink temperature were followed through experiments in order to check if the simulation results meet the design requirements and coincide with the power LED product design specification. Prior to the optimal design process for chip junction temperature, the most significant parameters were first chosen by the fractional factorial design. The regressive models were respectively setup by the dual response surface method (RSM) and the mixed response surface method. Furthermore, the genetic algorithm combined with response surface method was applied to acquire the optimal design parameters, and the results were obtained from both methods, which are reviewed for comparison. Afterwards, the mixed response surface method is adopted to investigate the effects of interactions among various factors on chip junction temperature. In conclusion, it is found that the thermal conductivity of MCPCB and the height of base heat-sink are the two major significant factors. In addition, the interactive effects between chip size and thermal conductivity of chip adhesion layer are acknowledged as the most significant interaction influenced on the chip junction temperature.

Optimal Design of Improved L-shaped Coprime Array Based on Difference and Sum Co-array

The concept of difference and sum co-array(DSCA)has become a new design idea for planar sparse arrays.Inspired by the shifting invariance property of DSCA,a specific configuration named here as the improved L-shaped array is proposed.Compared to other traditional 2D sparse array configurations such as 2D nested arrays and hourglass arrays,the proposed configuration has larger central consecutive ranges in its DSCA,thus increasing the DOF.At the same time,the mutual coupling effect is also reduced due to the enlarged spacing between the adjacent sensors.Simulations further demonstrate the superiority of the proposed arrays in terms of detection performance and estimation accuracy.

259W QCW Al-Free 808nm Linear Laser Diode Arrays

Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave （200μs pulse width and 2% duty cycles） operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.