Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation

Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas(2 DEG)in Ga N-based HEMTs.Coupled Schr¨odinger’s and Poisson’s equations are solved to calculate the band structure and the concentration of 2 DEG by the self-consistency method,in which the vacancies caused by proton irradiation are taken into account.Proton irradiation simulation for Ga N-based HEMT is carried out using the stopping and range of ions in matter(SRIM)simulation software,after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2 DEG.Irradiated by protons with high fluence and low energy,a large number of Ga vacancies appear inside the device.The results indicate that the ionized Ga vacancies in the Ga N cap layer and the Al Ga N layer will affect the Fermi level,while the Ga vacancies in the Ga N layer will trap the two-dimensional electrons in the potential well.Proton irradiation significantly reduced the concentration of 2 DEG by the combined effect of these two mechanisms.

Effective Qubit Emerging from the Nanoheterointerface Two-Dimensional Electron Gas Photodynamics

An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employed for studying how the Functional Eigenstate of the Two-Dimensional Electron Gas (2DEG) dwelling within the Quantum Well of a typical Semiconductor Nanoheterointerface evolves versus (cryptographically) selectable consecutive Cumulative Photon Dose values. Thus, it is ultimately discussed that the experimentally observed (after a Critical Cumulative Photon Dose) Phenomenon of 2DEG Negative Differential Mobility allows for the Nanosystem to exhibit an Effective Qubit Specific Functionality potentially conducive to (Telecommunication) Quantum Information Registering.

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

Influence of a two-dimensional electron gas on current-voltage characteristics of Al_(0.3)Ga_(0.7) N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.

High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.

Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO_(3)interface

Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.

A comparison of the transport properties of bilayer graphene,monolayer graphene,and two-dimensional electron gas

We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.

Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures

This paper finds that the two-dimensional electron gas density in high Al-content A1GaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements,high resolution x-ray diffraction,scanning electron microscopy,x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy.The results reveal that the formation of surface oxide is the main reason for the degradation,and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.

Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Magnetotransport measurements are carried out on the A1GaN/A1N/GaN in an SiC heterostructure, which demon- strates the existence of the high-quality two-dimensional electron gas （2DGE） at the A1N/GaN interface. While the carrier concentration reaches 1.32×10^13 cm^-2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 10^4 cm2/（V.s） at 2 K. The Shubnikov-de Haas （SdH） oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEC is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.

In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3(110) interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3（110） interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D＇yakonov–Perel＇（DP） scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.

On the Thermodynamics of a Two-Dimensional Electron Gas with Non-Parabolic Dispersion

A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures changes abruptly and smoothes jumps at high temperatures. This change manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing experimental data.

Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

This paper presents calculating results of the two-dimensional electron gas （2DEG） distributions in AlGaN/GaN material system by solving the Schroedinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schroedinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.

Two-dimensional metallic behavior at polar MgO/BaTiO_3(110) interfaces

The first-principles calculations are employed to investigate the electrical properties of polar MgO/BaTiO3（110）interfaces. Both n-type and p-type polar interfaces show a two-dimensional metallic behavior. For the n-type polar interface,the interface Ti3d electrons are the origin of the metallic and magnetic properties. Varying the thickness of Ba TiO3 may induce an insulator–metal transition, and the critical thickness is 4 unit cells. For the p-type polar interface, holes preferentially occupy the interface O 2p y state, resulting in a conducting interface. The unbalance of the spin splitting of the O 2p states in the interface Mg O layer leads to a magnetic moment of about 0.25μB per O atom at the interface.These results further demonstrate that other polar interfaces, besides LaAlO3/SrTiO3, can show a two-dimensional metallic behavior. It is helpful to fully understand the role of polar discontinuity on the properties of the interface, which widens the field of polar-nonpolar interfaces.

High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO_(3)/SrTiO_(3)(110)heterostructures

High-quality antiferromagnetic Mott insulator thin films of LaTiO_(3)(LTO)were epitaxially grown onto SrTiO_(3)(STO)(110)substrates using the pulsed laser deposition.The LTO/STO heterostructures are not only highly conducting and ferromagnetic,but also show Kondo effect,Shubnikov‒de Haas(SdH)oscillations with a nonzero Berry phase ofπ,and lowfield hysteretic negative magnetoresistance(MR).Angle-dependent SdH oscillations and a calculation of the thickness of the interfacial conducting layer indicate the formation of a 4-nm high mobility two-dimensional electron gas(2DEG)layer at the interface.Moreover,an amazingly large lowfield negative MR of∼61.8%is observed at 1.8 K and 200 Oe,which is approximately one to two orders of magnitude larger than those observed in other spin-polarized 2DEG oxide systems.All these results demonstrate that the 2DEG is spin-polarized and the 4-nm interfacial layer is ferromagnetic,which are attributed to the presence of magnetic Ti^(3+)ions due to interfacial oxygen vacancies and the diffusion of La^(3+)ions into the STO substrate.The localized Ti^(3+)magnetic moments couple to high mobility itinerant electrons under magnetic fields,giving rise to the observed lowfield MR.Our work demonstrates the great potential of antiferromagnetic titanate oxide interface for designing spin-polarized 2DEG and spintronic devices.

Spin-orbit interaction induced Casimir-Lifshitz torque between two-dimensional electron gases

We investigate theoretically the Casimir interaction between two parallel two-dimensional electron gases(2DEGs)with Rashba and Dresselhaus spin-orbit interactions(SOIs),based on the quantum field theory.We derive an analytical expression for the polarization tensor and obtain the solution to the motion equation of the electromagnetic(EM)field.We calculate the CasimirLifshitz torque(CLT)between two parallel 2DEGs with Rashba and Dresselhaus SOIs,which can be tuned by changing the relative strength between two SOIs.The anisotropic Casimir energy between 2DEGs caused by the interplay between the SOIs of 2DEGs offers a new origin of CLT and a new type of optoelectronic device.

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs（the gap between the gate and the source/drain antenna） and L w（the gap between the source and drain antenna）.With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.

Breakdown voltage analysis of Al_(0.25)Ga_(0.75)N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.