As a new technology of analyzing crude oils,comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GCTOFMS) has received much research attention.Here we present a case s...As a new technology of analyzing crude oils,comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GCTOFMS) has received much research attention.Here we present a case study in the Junggar Basin of NW China.Results show that the hydrocarbons,including saturates and aromatics,were all well-separated without large coelution,which cannot be realized by conventional one-dimensional GC-MS.The GC×GC technique is especially effective for analyzing aromatics and low-to-middlemolecular-weight hydrocarbons,such as diamondoids.The geochemical characteristics of crude oils in the study area were investigated through geochemical parameters extracted by GC×GC-TOFMS,improving upon the understanding obtained by GC-MS.Thus,the work here represents a new successful application of GC×GCTOFMS,showing its broad usefulness in petroleum geochemistry.展开更多
Comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GC-TOFMS) is commercially available in the 1990s,with the characteristics of large peak capacity,high resolution,h...Comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GC-TOFMS) is commercially available in the 1990s,with the characteristics of large peak capacity,high resolution,high sensitivity,etc.However,its application to the petroleum and geological analyses is just emerging in China and overseas.In this research,the analytical method for petroleum aromatic fraction using GC×GC-TOFMS is set up,via the choice of the column system and optimization of setting parameters,such as temperature programming,modulation time,hot pulse time,flow rate of carrier gas,data acquisition rate and data processing.The results indicate that different polar compounds of aromatic fraction distribute as bands on structured GC×GC chromatogram.Within each band,homologous compounds appear as a roof-tile structure based on the number of substituent residues.The aromatic compounds are identified and characterized according to the GC×GC chromatogram and mass spectra.According to the polarity and the number of rings,aromatic compounds are spatially present on one chromatogram,which directly reflects the distribution characteristics of complex compounds of aromatic hydrocarbons.In addition,quantitative analysis is favored as some overlapped peaks on traditional GC-MS chromatogram have been separated completely on GC×GC.Some heterocyclic atom aromatic compounds at trace level can be clearly identified using this method,for polarity differences from other interfered aromatic compounds.The development of this method and chromatogram recognition offer petroleum geologists a practical example for the application performance of GC×GC-TOFMS.展开更多
To investigate the chemical transformation of volatile compounds in sulfur-fumigated Radix Angelicae Sinensis. A comprehensive two-dimensional gas chromatography (GCxGC) and high-resolution time-of-flight mass spectro...To investigate the chemical transformation of volatile compounds in sulfur-fumigated Radix Angelicae Sinensis. A comprehensive two-dimensional gas chromatography (GCxGC) and high-resolution time-of-flight mass spectrometry (HR-TOF/MS) with colorized fuzzy difference (CFD) method was used to investigate the effect of sulfur-fumigation on the volatile components from Radix Angelicae Sinensis. Twenty-five compounds that were found in sun-dried samples disappeared in sulfur-fumigated samples. Seventeen volatile components including two sulfur-containing compounds were newly generated for the first time in volatile oils of sulfur-fumigated Radix Angelicae Sinensis. The strategy can be successfully applied to rapidly and holistically discriminate sun-dried and sulfur-fumigated Radix Angelicae Sinensis. GCxGC-HR-TOF/MS based CFD is a powerful and feasible approach for the global quality evaluation of Radix Angelicae Sinensis as well as other herbal medicines.展开更多
Objectives:The ageing process has a significant impact on the aroma of Chinese Baijiu,which could strengthen the desirable flavor characteristics and reduce the undesirable ones.The aim of this study was to observe th...Objectives:The ageing process has a significant impact on the aroma of Chinese Baijiu,which could strengthen the desirable flavor characteristics and reduce the undesirable ones.The aim of this study was to observe the in itiation of mean in gful cha nges in volatile fracti on and locate the ageing markers during ageing storage of Chinese Highland Qingke Baijiu.Materials and Methods:Samples of Chinese Qingke Baijiu were aged for 0,1,2,3,4,5,6,7,8,9,10,and 11 mon ths before an alysis.The samples were isolated by liquid-liquid extraction and then analyzed by comprehensive two-dimensional gas chromatography-time-of-flight mass spectrometry.The acquired data were processed by untargeted and targeted metabolomics approach to locate the ageing markers.Results:The untargeted metabolomics analysis(hierarchical clustering analysis,HCA)shows that the chemical composition of Qingke Baijiu presents a statistically sigrdficant deviation from the reference scenario after 5 mon ths.Subsequently,supervised statistics analysis(orthogo nal partial least squares discrimination analysis)was performed to locate the markers,which changed sigrdficantly during ageing.Fifteen markers were located,and seven of them were acetals.Notably,1,1-diethoxy-propane,1,1-diethoxy-butane,and 1,1-diethoxy-3-methyl-butane are important contributors to the flavor of Chinese Baijiu.The identified markers were applied for the untargeted metabolomics(HCA),and the results revealed that these markers could divide the Qingke Baijiu into two ageing stages,0-5 months and 6-11 months.Conclusion:The results suggest that it is a valuable tool for monitoring the changes of volatile compounds and locating the age markers in Chinese Baijiu.展开更多
Inherent complexity of plant metabolites necessitates the use of multi-dimensional information to accomplish comprehensive profiling and confirmative identification.A dimension-enhanced strategy,by offline two-dimensi...Inherent complexity of plant metabolites necessitates the use of multi-dimensional information to accomplish comprehensive profiling and confirmative identification.A dimension-enhanced strategy,by offline two-dimensional liquid chromatography/ion mobility-quadrupole time-of-flight mass spectrometry(2 D-LC/IM-QTOF-MS)enabling four-dimensional separations(2 D-LC,IM,and MS),is proposed.In combination with in-house database-driven automated peak annotation,this strategy was utilized to characterize ginsenosides simultaneously from white ginseng(WG)and red ginseng(RG).An offline 2 DLC system configuring an Xbridge Amide column and an HSS T3 column showed orthogonality 0.76 in the resolution of ginsenosides.Ginsenoside analysis was performed by data-independent high-definition MSE(HDMSE)in the negative ESI mode on a Vion?IMS-QTOF hybrid high-resolution mass spectrometer,which could better resolve ginsenosides than MSEand directly give the CCS information.An in-house ginsenoside database recording 504 known ginsenosides and 58 reference compounds,was established to assist the identification of ginsenosides.Streamlined workflows,by applying UNIFI?to automatedly annotate the HDMSEdata,were proposed.We could separate and characterize 323 ginsenosides(including 286 from WG and 306 from RG),and 125 thereof may have not been isolated from the Panax genus.The established 2 D-LC/IM-QTOF-HDMSEapproach could also act as a magnifier to probe differentiated components between WG and RG.Compared with conventional approaches,this dimensionenhanced strategy could better resolve coeluting herbal components and more efficiently,more reliably identify the multicomponents,which,we believe,offers more possibilities for the systematic exposure and confirmative identification of plant metabolites.展开更多
In this study, we selected adult normal pituitary gland tissues from six patients during operations for pituitary microadenomas via the transsphenoidal approach for extended normal pituitary tissue resection around th...In this study, we selected adult normal pituitary gland tissues from six patients during operations for pituitary microadenomas via the transsphenoidal approach for extended normal pituitary tissue resection around the tumor, and analyzed the protein expression of human normal pituitary using two-dimensional high-performance liquid chromatography combined with LTQ-Orbitrap mass spectrometry proteomics technology. The ten most highly expressed proteins in normal human pituitary were: alpha 3 type VI collagen isoform 5 precursor (abundance among tall pituitary proteins 1.30%), fibrinogen beta chain preproprotein (0.99%), vimentin (0.73%), prolactin (0.69%), ATP synthase, H~ transporting and mitochondrial F1 complex beta subunit precursor (0.52%), keratin I (0.49%), growth hormone (0.45%), carbonic anhydrase I (0.40%), heat shock protein 90 kDa I (0.31%), and annexin V (0.30%). Based on the biological function classifications of these proteins, the top three categories by content were neuroendocrine proteins (abundance among all pituitary proteins, 40.1%), catalytic and metabolic proteins (28.3%), and cell signal transduction proteins (9.8%). Based on cell positioning classification, the top three categories were cell organelle (24.5%) membrane (20.8%), and cytoplasm (13.0%). Based on biological process classification, the top three categories of proteins are involved in physiological processes (42.9%), cellular processes (40.4%), and regulation of biological processes (9.1%). Our experimental findings indicate that a protein expression profile database of normal human pituitary can be precisely and efficiently established by proteomics technology.展开更多
The samples of InxGa(1-x)As/In(0.52)Al(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are chang...The samples of InxGa(1-x)As/In(0.52)Al(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s(300 K)and42040 cm^2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.展开更多
Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. T...Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.展开更多
To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al c...To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.展开更多
The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional el...The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region(about 5 nm).For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.展开更多
Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electro...Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.展开更多
Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dime...Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.展开更多
Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)b...Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.展开更多
A theoretical investigation is presented on the characteristics of the kinetic magnetoelectric effect in laterally boundary-confined ballistic two-dimensional hole gases. It was shown that, though the momentum-depende...A theoretical investigation is presented on the characteristics of the kinetic magnetoelectric effect in laterally boundary-confined ballistic two-dimensional hole gases. It was shown that, though the momentum-dependent effective magnetic fields felt by charge carriers due to the spin-orbit interaction are in-plane orientated in such systems, both in-plane polarized and normal polarized nonequilibrium spin polarization densities could be electrically induced by the kinetic magnetoelectric effect, and the induced nonequilibrium spin polarizations exhibit some interesting characteristics. The characteristics we found indicate that there may be some possible relation between this effect and some recent experimental findings.展开更多
We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the...We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.展开更多
This paper finds that the two-dimensional electron gas density in high Al-content A1GaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was inv...This paper finds that the two-dimensional electron gas density in high Al-content A1GaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements,high resolution x-ray diffraction,scanning electron microscopy,x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy.The results reveal that the formation of surface oxide is the main reason for the degradation,and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.展开更多
Magnetotransport measurements are carried out on the A1GaN/A1N/GaN in an SiC heterostructure, which demon- strates the existence of the high-quality two-dimensional electron gas (2DGE) at the A1N/GaN interface. Whil...Magnetotransport measurements are carried out on the A1GaN/A1N/GaN in an SiC heterostructure, which demon- strates the existence of the high-quality two-dimensional electron gas (2DGE) at the A1N/GaN interface. While the carrier concentration reaches 1.32×10^13 cm^-2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 10^4 cm2/(V.s) at 2 K. The Shubnikov-de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEC is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.展开更多
A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepar...A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.展开更多
A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band di...A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures changes abruptly and smoothes jumps at high temperatures. This change manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing experimental data.展开更多
he use of an absorption trap off-line two-dimensional gas chromatography (2-DGC) in conjunction with a mass spectrometer greatly improved the separation andidefitification of minor constituents of a complex mixture su...he use of an absorption trap off-line two-dimensional gas chromatography (2-DGC) in conjunction with a mass spectrometer greatly improved the separation andidefitification of minor constituents of a complex mixture such as a natural essentialoil. The absorption trap device used as an interface of 2-DGC offered the advantageof convenient manipulation.展开更多
基金funded by the Major State Basic Research Development Program of China(973 project,Grant No.2012CB214803)National Science and Technology Major Project of China(Grant No. 2016ZX05003-005)National Natural Science Foundation of China(Grant Nos.41322017 and 41472100)
文摘As a new technology of analyzing crude oils,comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GCTOFMS) has received much research attention.Here we present a case study in the Junggar Basin of NW China.Results show that the hydrocarbons,including saturates and aromatics,were all well-separated without large coelution,which cannot be realized by conventional one-dimensional GC-MS.The GC×GC technique is especially effective for analyzing aromatics and low-to-middlemolecular-weight hydrocarbons,such as diamondoids.The geochemical characteristics of crude oils in the study area were investigated through geochemical parameters extracted by GC×GC-TOFMS,improving upon the understanding obtained by GC-MS.Thus,the work here represents a new successful application of GC×GCTOFMS,showing its broad usefulness in petroleum geochemistry.
基金sponsored by the Science and Technology Management Department of China National Petroleum Corporation
文摘Comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry(GC×GC-TOFMS) is commercially available in the 1990s,with the characteristics of large peak capacity,high resolution,high sensitivity,etc.However,its application to the petroleum and geological analyses is just emerging in China and overseas.In this research,the analytical method for petroleum aromatic fraction using GC×GC-TOFMS is set up,via the choice of the column system and optimization of setting parameters,such as temperature programming,modulation time,hot pulse time,flow rate of carrier gas,data acquisition rate and data processing.The results indicate that different polar compounds of aromatic fraction distribute as bands on structured GC×GC chromatogram.Within each band,homologous compounds appear as a roof-tile structure based on the number of substituent residues.The aromatic compounds are identified and characterized according to the GC×GC chromatogram and mass spectra.According to the polarity and the number of rings,aromatic compounds are spatially present on one chromatogram,which directly reflects the distribution characteristics of complex compounds of aromatic hydrocarbons.In addition,quantitative analysis is favored as some overlapped peaks on traditional GC-MS chromatogram have been separated completely on GC×GC.Some heterocyclic atom aromatic compounds at trace level can be clearly identified using this method,for polarity differences from other interfered aromatic compounds.The development of this method and chromatogram recognition offer petroleum geologists a practical example for the application performance of GC×GC-TOFMS.
基金Supported by the National Natural Science Foundation of China(No.81173546 and No.30940093)the Natural Science Foundation of Jiangsu Province,China(No.BK2009495)+4 种基金the International Science and Technology Cooperation Project of Jiangsu Province,China(No.BZ2011053)the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD,No.2011ZYX2-001)the Postgraduate Research Innovation Project of Jiangsu Higher Education Institutions(No.KYLX_0975)the Chinese Medicine Research Program of Zhejiang Province,China(No.2014ZQ008)the Science Foundation of Zhejiang Chinese Medical University(No.2013ZZ12)
文摘To investigate the chemical transformation of volatile compounds in sulfur-fumigated Radix Angelicae Sinensis. A comprehensive two-dimensional gas chromatography (GCxGC) and high-resolution time-of-flight mass spectrometry (HR-TOF/MS) with colorized fuzzy difference (CFD) method was used to investigate the effect of sulfur-fumigation on the volatile components from Radix Angelicae Sinensis. Twenty-five compounds that were found in sun-dried samples disappeared in sulfur-fumigated samples. Seventeen volatile components including two sulfur-containing compounds were newly generated for the first time in volatile oils of sulfur-fumigated Radix Angelicae Sinensis. The strategy can be successfully applied to rapidly and holistically discriminate sun-dried and sulfur-fumigated Radix Angelicae Sinensis. GCxGC-HR-TOF/MS based CFD is a powerful and feasible approach for the global quality evaluation of Radix Angelicae Sinensis as well as other herbal medicines.
基金supported by the National Key Research and Development Program of China(2016YFD0400500)the National Natural Science Foundation of China(No.32001826).
文摘Objectives:The ageing process has a significant impact on the aroma of Chinese Baijiu,which could strengthen the desirable flavor characteristics and reduce the undesirable ones.The aim of this study was to observe the in itiation of mean in gful cha nges in volatile fracti on and locate the ageing markers during ageing storage of Chinese Highland Qingke Baijiu.Materials and Methods:Samples of Chinese Qingke Baijiu were aged for 0,1,2,3,4,5,6,7,8,9,10,and 11 mon ths before an alysis.The samples were isolated by liquid-liquid extraction and then analyzed by comprehensive two-dimensional gas chromatography-time-of-flight mass spectrometry.The acquired data were processed by untargeted and targeted metabolomics approach to locate the ageing markers.Results:The untargeted metabolomics analysis(hierarchical clustering analysis,HCA)shows that the chemical composition of Qingke Baijiu presents a statistically sigrdficant deviation from the reference scenario after 5 mon ths.Subsequently,supervised statistics analysis(orthogo nal partial least squares discrimination analysis)was performed to locate the markers,which changed sigrdficantly during ageing.Fifteen markers were located,and seven of them were acetals.Notably,1,1-diethoxy-propane,1,1-diethoxy-butane,and 1,1-diethoxy-3-methyl-butane are important contributors to the flavor of Chinese Baijiu.The identified markers were applied for the untargeted metabolomics(HCA),and the results revealed that these markers could divide the Qingke Baijiu into two ageing stages,0-5 months and 6-11 months.Conclusion:The results suggest that it is a valuable tool for monitoring the changes of volatile compounds and locating the age markers in Chinese Baijiu.
基金the National Natural Science Foundation of China(Grant No.81872996)the State Key Research and Development Project(Grant No.2017YFC1702104)+1 种基金the State Key Project for the Creation of Major New Drugs(2018ZX09711001-009-010)the Tianjin Municipal Education Commission Research Project(Grant No.2017ZD07)。
文摘Inherent complexity of plant metabolites necessitates the use of multi-dimensional information to accomplish comprehensive profiling and confirmative identification.A dimension-enhanced strategy,by offline two-dimensional liquid chromatography/ion mobility-quadrupole time-of-flight mass spectrometry(2 D-LC/IM-QTOF-MS)enabling four-dimensional separations(2 D-LC,IM,and MS),is proposed.In combination with in-house database-driven automated peak annotation,this strategy was utilized to characterize ginsenosides simultaneously from white ginseng(WG)and red ginseng(RG).An offline 2 DLC system configuring an Xbridge Amide column and an HSS T3 column showed orthogonality 0.76 in the resolution of ginsenosides.Ginsenoside analysis was performed by data-independent high-definition MSE(HDMSE)in the negative ESI mode on a Vion?IMS-QTOF hybrid high-resolution mass spectrometer,which could better resolve ginsenosides than MSEand directly give the CCS information.An in-house ginsenoside database recording 504 known ginsenosides and 58 reference compounds,was established to assist the identification of ginsenosides.Streamlined workflows,by applying UNIFI?to automatedly annotate the HDMSEdata,were proposed.We could separate and characterize 323 ginsenosides(including 286 from WG and 306 from RG),and 125 thereof may have not been isolated from the Panax genus.The established 2 D-LC/IM-QTOF-HDMSEapproach could also act as a magnifier to probe differentiated components between WG and RG.Compared with conventional approaches,this dimensionenhanced strategy could better resolve coeluting herbal components and more efficiently,more reliably identify the multicomponents,which,we believe,offers more possibilities for the systematic exposure and confirmative identification of plant metabolites.
基金supported by the National NaturalScience Foundation of China, No. 81200890
文摘In this study, we selected adult normal pituitary gland tissues from six patients during operations for pituitary microadenomas via the transsphenoidal approach for extended normal pituitary tissue resection around the tumor, and analyzed the protein expression of human normal pituitary using two-dimensional high-performance liquid chromatography combined with LTQ-Orbitrap mass spectrometry proteomics technology. The ten most highly expressed proteins in normal human pituitary were: alpha 3 type VI collagen isoform 5 precursor (abundance among tall pituitary proteins 1.30%), fibrinogen beta chain preproprotein (0.99%), vimentin (0.73%), prolactin (0.69%), ATP synthase, H~ transporting and mitochondrial F1 complex beta subunit precursor (0.52%), keratin I (0.49%), growth hormone (0.45%), carbonic anhydrase I (0.40%), heat shock protein 90 kDa I (0.31%), and annexin V (0.30%). Based on the biological function classifications of these proteins, the top three categories by content were neuroendocrine proteins (abundance among all pituitary proteins, 40.1%), catalytic and metabolic proteins (28.3%), and cell signal transduction proteins (9.8%). Based on cell positioning classification, the top three categories were cell organelle (24.5%) membrane (20.8%), and cytoplasm (13.0%). Based on biological process classification, the top three categories of proteins are involved in physiological processes (42.9%), cellular processes (40.4%), and regulation of biological processes (9.1%). Our experimental findings indicate that a protein expression profile database of normal human pituitary can be precisely and efficiently established by proteomics technology.
基金Project supported by the Foundation for Scientific Instrument and Equipment Development,Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61435012)
文摘The samples of InxGa(1-x)As/In(0.52)Al(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s(300 K)and42040 cm^2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017)
文摘Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
基金supported by the Key Program of the National Natural Science Foundation of China (Grant No 60736033)Xi’an Applied Materials Innovation Fund of China (Grant No XA-AM-200703)the Open Fund of Key Laboratory of Wide Bandgap Semiconductors Material and Devices,Ministry of Education,China
文摘To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976070)the Excellent Science and Technology Innovation Program from Beijing Jiaotong University,China
文摘The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region(about 5 nm).For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.
文摘Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
基金the National Key Research and Development Program of China(Grant No.2018YFB2202801)the National Natural Science Foundation of China(Grant No.12074369).
文摘Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.
基金the National Key R&D Program of China(Grant Nos.2016YFA0300701,2017YFA0206304,and 2018YFA0305704)the National Natural Science Foundation of China(Grant Nos.11934016,111921004,51972335,and 11674378)the Key Program of the Chinese Academy of Sciences(Grant Nos.XDB33030200 and QYZDY-SSW-SLH020)。
文摘Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.
基金supported by the National Natural Science Foundation of China (Grant No 10874049)the State Key Program for Basic Research of China (Grant No 2007CB925204)the Natural Science Foundation of Guangdong Province of China (Grant No 07005834)
文摘A theoretical investigation is presented on the characteristics of the kinetic magnetoelectric effect in laterally boundary-confined ballistic two-dimensional hole gases. It was shown that, though the momentum-dependent effective magnetic fields felt by charge carriers due to the spin-orbit interaction are in-plane orientated in such systems, both in-plane polarized and normal polarized nonequilibrium spin polarization densities could be electrically induced by the kinetic magnetoelectric effect, and the induced nonequilibrium spin polarizations exhibit some interesting characteristics. The characteristics we found indicate that there may be some possible relation between this effect and some recent experimental findings.
基金the National Natural Science Foundation of China(Grant No.11104156)the Postdoctoral Science Foundation of China(Grant No.2012M510405)+1 种基金the Independent Research and Development Fund of Tsinghua University,China(Grant No.20121087948)the Beijing Key Lab of Fine Ceramics Opening Fund,China(Grant No.2012200110)
文摘We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.
基金Project supported by the Major Program and State Key Program of National Natural Science of China (Grant Nos 60890191 and 60736033)the National Key Science & Technology Special Project (Grant No 2008ZX 01002)
文摘This paper finds that the two-dimensional electron gas density in high Al-content A1GaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements,high resolution x-ray diffraction,scanning electron microscopy,x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy.The results reveal that the formation of surface oxide is the main reason for the degradation,and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.
基金Project supported by the National Basic Research Program of China (Grant No.2011CB309606)
文摘Magnetotransport measurements are carried out on the A1GaN/A1N/GaN in an SiC heterostructure, which demon- strates the existence of the high-quality two-dimensional electron gas (2DGE) at the A1N/GaN interface. While the carrier concentration reaches 1.32×10^13 cm^-2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 10^4 cm2/(V.s) at 2 K. The Shubnikov-de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEC is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.
基金Project supported by the Ministry of Science and Technology of China(Grant Nos.2013CB921701,2013CBA01603,and 2014CB920903)the National Natural Science Foundation of China(Grant Nos.10974019,51172029,91121012,11422430,11374035,11474022,and 11474024)+1 种基金the Program for New Century Excellent Talents in the University of the Ministry of Education of China(Grant No.NCET-13-0054)the Beijing Higher Education Young Elite Teacher Project,China(Grant No.YETP0238)
文摘A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.
文摘A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures changes abruptly and smoothes jumps at high temperatures. This change manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing experimental data.
文摘he use of an absorption trap off-line two-dimensional gas chromatography (2-DGC) in conjunction with a mass spectrometer greatly improved the separation andidefitification of minor constituents of a complex mixture such as a natural essentialoil. The absorption trap device used as an interface of 2-DGC offered the advantageof convenient manipulation.