Lewis acid-doped transition metal dichalcogenides for ultraviolet–visible photodetectors

Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

Two-dimensional(2D)transition metal chalcogenides(TMC)and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices,particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems.The distinct properties such as high durability,electrical and optical tunability,clean surface,flexibility,and LEGO-staking capability enable simple fabrication with high integration density,energy-efficient operation,and high scalability.This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications,including the promise of 2D TMC materials and heterostructures,as well as the state-of-the-art demonstration of memristive devices.The challenges and future prospects for the development of these emerging materials and devices are also discussed.The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.

Progress in functional studies of transition metal borides

In recent years,transition metal borides(TMBs)have attracted much attention because they are considered as potential superhard materials and have more abundant crystal structures compared with traditional superhard materials.So far,however,no superhard materials have been found in TMBs.A large number of structures and potential new properties in TMBs are induced by the various hybridization ways of boron atoms and the high valence electrons of transition metals,which provide many possibilities for its application.And most TMBs have layered structures,which make TMBs have the potential to be a two-dimensional(2D)material.The 2D materials have novel properties,but the research on 2D TMBs is still nearly blank.In this paper,the research progress of TMBs is summarized involving structure,mechanical properties,and multifunctional properties.The strong covalent bonds of boron atoms in TMBs can form one-dimensional,twodimensional,and three-dimensional substructures,and the multiple electron transfer between transition metal and boron leads to a variety of chemical bonds in TMBs,which are the keys to obtain high hardness and multifunctional properties of TMBs.Further research on the multifunctional properties of TMBs,such as superconductors,catalysts,and high hardness ferromagnetic materials,is of great significance to the discovery of new multifunctional hard materials.

Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.

Recent Progress in Emerging Two‑Dimensional Transition Metal Carbides

As a new member in two-dimensional materials family,transition metal carbides(TMCs)have many excellent properties,such as chemical stability,in-plane anisotropy,high conductivity and flexibility,and remarkable energy conversation efficiency,which predispose them for promising applications as transparent electrode,flexible electronics,broadband photodetectors and battery electrodes.However,up to now,their device applications are in the early stage,especially because their controllable synthesis is still a great challenge.This review systematically summarized the state-of-the-art research in this rapidly developing field with particular focus on structure,property,synthesis and applicability of TMCs.Finally,the current challenges and future perspectives are outlined for the application of 2D TMCs.

Defect repairing in two-dimensional transition metal dichalcogenides

Atomically thin two-dimensional(2D)transition metal dichalcogenides(TMDCs)have stimulated enormous research interest due to rich phase structure,high theoretical carrier mobility and layer-dependent bandgap.In view of the close correlation between defects and properties in 2D TMDCs,more attentions have been paid on the defect engineering in recent years,however the mechanism is still unclear.Herein,we review the critical progress of defect engineering and provide an extensive way to modulate the properties depressed by defects.To insight into the defect engineering,we firstly introduce two common kinds of defects during the growth progress of TMDCs and the possible distribution of energy levels those defects could induce.Then,various methods to improve point defects and grain boundaries during the period of growth are discussed intensively,with the assistance of which more large-area TMDCs films can be obtained.Considering the defects in TMDCs are inevitable regardless of concentration,we also highlight strategies to heal the defects after growth.Through dry methods or wet methods,the chalcogen vacancies can be repaired and thus,the performance of electronic device would be significantly enhanced.Finally,we propose the challenges and prospective for defect engineering in 2D TMDCs materials to support the optimization of device and lead them to wide applied fields.

Flexible electronics based on one-dimensional inorganic semiconductor nanowires and two-dimensional transition metal dichalcogenides

Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the past few decades,the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements,and inorganic semiconductors are also now beginning to shine in the field of flexible electronics.As validated by the latest research,some of the inorganic semiconductors,particularly those at low dimension,unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties.Herein,we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics,including one-dimensional(1D)inorganic semiconductor nanowires(NWs)and two-dimensional(2D)transition metal dichalcogenides(TMDs).The fundamental electrical properties,optical properties,mechanical properties and strain engineering of materials,and their performance in flexible device applications are discussed in detail.We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.

Two-dimensional transition metal dichalcogenides for post-silicon electronics

Rapid advancements in information technology push the explosive growth in data volume,requiring greater computing-capability logic circuits.However,conventional computing-capability improving technology,which mainly relies on increasing transistor number,encounters a significant challenge due to the weak field-effect characteristics of bulk siliconbased semiconductors.Still,the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides(2D-TMDCs)materials enable excellent field-effect characteristics and multiple gate control ports,facilitating the integration of the functions of multiple transistors into one.Generally,the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers.In other words,one can only use a small number,or even just one,2DTMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional transistors.In this review,from material selection,device structure optimization,and circuit architecture design,we discuss the developments,challenges,and prospects for 2D-TMDCs-based logic circuits.

Advances in catalytic elimination of atmospheric pollutants by two-dimensional transition metal oxides

Atmospheric pollutants can deteriorate air quality and put human health at risk.There is a growing need for green,economical,and efficient technologies,among which catalytic elimination technology is the most promising,to remove atmospheric pollutants.Two-dimensional transition metal oxides(2D TMOs)have recently become attractive catalysts due to their highly exposed active sites,excellent reactant transport properties,and extraordinary catalytic performance.This review systematically summarizes the topdown and bottom-up preparation methods of 2D TMOs and focuses on the specific applications of 2D TMOs in the catalytic elimination of atmospheric inorganic pollutants and volatile organic pollutants.The development of 2D TMOs in the catalytic elimination of atmospheric pollutants is prospected.This review is expected to provide design insights into efficient 2D TMOs to remove atmospheric pollutants.

Strong correlations in two-dimensional transition metal dichalcogenides

Since the discovery of graphene,the development of two-dimensional material research has enabled the exploration of a rich variety of exotic quantum phenomena that are not accessible in bulk materials.These two-dimensional materials offer a unique platform to build novel quantum devices.Layered transition metal dichalcogenides,when thinned down to atomic thicknesses,exhibit intriguing physical properties such as strong electron correlations.The study of strongly-correlated phenomena in twodimensional transition metal dichalcogenides has been a major research frontier in condensed matter physics.In this article,we review recent progress on strongly-correlated phenomena in two-dimensional transition metal dichalcogenides,including Mott insulators,quantum spin liquids,and Wigner crystals.These topics represent a rapidly developing research area,where tremendous opportunities exist in discovering exotic quantum phenomena,and in exploring their applications for future electronic devices.

Enhancing hydrogen evolution reaction performance of transition metal doped two-dimensional electride Ca_(2)N

Two-dimensional electride Ca_(2)N has strong electron transfer ability and low work function,which is a potential candidate for hydrogen evolution reaction(HER)catalyst.In this work,based on density functional theory calculations,we adopt two strategies to improve the HER catalytic activity of Ca_(2)N monolayer:introducing Ca or N vacancy and doping transition metal atoms(TM,refers to Ti,V,Cr,Mn,Fe,Zr,Nb,Mo,Ru,Hf,Ta and W).Interestingly,the Gibbs free energyΔG_(H*)of Ca_(2)N monolayer after introducing N vacancy is reduced to-0.146 e V,showing good HER catalytic activity.It is highlighted that,the HER catalytic activity of Ca_(2)N monolayer can be further enhanced with TM doping,the Gibbs free energyΔG_(H*)of single Mo and double Mn doped Ca_(2)N are predicted to be 0.119 and 0.139 e V,respectively.The present results will provide good theoretical guidance for the HER catalysis applications of two-dimensional electride Ca_(2)N monolayer.

Recent progress of two-dimensional metal-base catalysts in urea oxidation reaction

Urea oxidation reaction(UOR)is an auxiliary water electrolysis hydrogen production technology developed in recent years to replace oxygen evolution reaction and reduce energy consumption,which can produce hydrogen more efficiently by low theoretical potential,reduce the average cost of electrochemical hydrogen production,and is a frontier research hotspot for renewable hydrogen energy.Two-dimensional(2D)nanomaterials as electrocatalysts have many favorable potential,such as it can effectively reduce the resistivity of materials and increase the specific surface area with certainty.This paper reviews the application of 2D materials in UOR in alkaline electrolytes.And a cross-sectional comparison of various material performance data including overpotential,Tafel slope,electrochemical active surface area(ECSA)and it stability test was conducted,which could illustrate the differences between materials composed of different elements.In addition,the main challenges hindering the progress of research on 2D materials in urea electrocatalysis processes and promising materials in this field in future are summarized and prospected.It is believed that this review will contribute to designing and analyzing highperformance 2D urea electrocatalysts for water splitting.

Recent advances on liquid intercalation and exfoliation of transition metal dichalcogenides: From fundamentals to applications

The weak van der Waals gap endows two dimensional transition metal dichalcogenides(2D TMDs)with the potential to realize guest intercalation and host exfoliation.Intriguingly,the liquid intercalation and exfoliation is a facile,low-cost,versatile and scalable strategy to modulate the structure and physiochemical property of TMDs via introducing foreign species into interlayer.In this review,firstly,we briefly introduce the resultant hybrid superlattice and disperse nanosheets with tailored properties fabricated via liquid intercalation and exfoliation.Subsequently,we systematically analyze the intercalation phenomenon and limitations of various intercalants in chemical or electrochemical methods.Afterwards,we intensely discuss diverse functionalities of resultant materials,focusing on their potential applications in energy conversion,energy storage,water purification,electronics,thermoelectrics and superconductor.Finally,we highlight the challenges and outlooks for precise and mass production of 2D TMDs-based materials via liquid intercalation and exfoliation.This review enriches the overview of liquid intercalation and exfoliation strategy,and paves the path for relevant high-performance devices.

Recent Progress of Two-Dimensional Thermoelectric Materials

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades.Among these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric materials.Due to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of applications.Herein,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is presented.In addition,nanodevice and new applications of 2D thermoelectric materials are also introduced.At last,current challenges are discussed and several prospects in this field are proposed.

Ultra-incompressible Ternary Diborides Re_(0.5)Ir_(0.5)B_2,Re_(0.5)Tc_(0.5)B_2,Os_(0.5)W_(0.5)B_2 and Os_(0.5)Ru_(0.5)B_2:Density Functional Calculation

In this paper, density functional computations have been applied to the structural, elastic and electronic properties of ternary transition metal diborides Re0.5Ir0.5B2, Re0.5Tc0.5B2, Os0.5W0.5B2 and Os0.5Ru0.5B2 in hexagonal （P63/mmc） and orthorhombic （Pmmn） structures with both local density approximation and generalized gradient approximation. LDA gives smaller lattice parameters and larger elastic moduli than GGA. Both results show that the hexagonal ones are more stable than orthorhombic ones except Os0.5Ru0.5B2. Moreover, the hexagonal structure has superior elastic property than orthorhombic one. Generally speaking, the calculated elastic moduli of Re0.5Ir0.5B2 and Os0.5Ru0.5B2 are smaller than those values of Re0.5Tc0.5B2 and Os0.5W0.5B2 within the same structure because of the filling of antibonding states. The relativistic effects result in weaker bonds of Tc-B （Ru-B） than those of Re-B （Os-B）. All the diborides are ultra-incompressible. Re0.5Tc0.5B2 has the largest shear modulus and it is a promising superhard diboride like Os0.5W0.5B2. The elastic properties are in high correlation with the bond strength. The shear moduli are more sensitive than the bulk moduli to the bond strength.

Efficient photoelectrodes based on two-dimensional transition metal dichalcogenides heterostructures:from design to construction

Hydrogen production by photoelectrochemical(PEC) water splitting converts the inexhaustible supply of solar radiation to storable H2 as clean energy and thus has received widespread attention.The efficiency of PEC water splitting is largely determined by the properties of the photoelectrodes.Two-dimensional(2 D) layered transition metal dichalcogenides(TMDs) are promising candidates for photoelectrodes due to their atomic layer thickness,tunable bandgap,large specific surface area,and high carrier mobility.Moreover,the construction of 2 D TMDs heterostructures provides freedom in material design,which facilitates the further improvement of PEC water splitting.This review begins by describing the mechanism of PEC water splitting and the advantages of 2 D TMDbased heterostructures for photo electrodes.Then,the design considerations of the heterostructures for enhanced PEC efficiency are comprehensively reviewed with a focus on material selection,band engineering,surface modification,and long-term durability.Finally,current challenges and future perspectives for the development of photoelectrodes based on 2 D TMDs heterostructures are addressed.

Two-dimensional noble transition-metal dichalcogenides for nanophotonics and optoelectronics:Status and prospects

An emerging subclass of transition-metal dichalcogenides(TMDs),noble-transition-metal dichalcogenides(NMDs),has led to an increase in nanoscientific research in two-dimensional(2D)materials.NMDs feature a unique structure and several useful properties.2D NMDs are promising candidates for a broad range of applications in areas such as photodetectors,phototransistors,saturable absorbers,and meta optics.In this review,the state of the art of 2D NMDs research,their structures,properties,synthesis,and potential applications are discussed,and a perspective of expected future developments is provided.

First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides

Two-dimensional group-VIB transition metal dichalcogenides（with the formula of MX2） emerge as a family of intensely investigated semiconductors that are promising for both electronic（because of their reasonable carrier mobility） and optoelectronic（because of their direct band gap at monolayer thickness） applications. Effective mass is a crucial physical quantity determining carriers transport, and thus the performance of these applications. Here we present based on first-principles high-throughput calculations a computational study of carrier effective masses of the two-dimensional MX2 materials. Both electron and hole effective masses of different MX2（M = Mo, W and X = S, Se, Te）, including in-layer/out-of-layer components, thickness dependence, and magnitude variation in heterostructures, are systemically calculated. The numerical results, chemical trends, and the insights gained provide useful guidance for understanding the key factors controlling carrier effective masses in the MX2 system and further engineering the mass values to improve device performance.

Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics

Tremendous efforts have been devoted to preparing the ultrathin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)and TMDCS-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade.However,to fulfill the demands for practical applications,the batch production of 2D TMDCs with high quality and large area at the mild condi-tions is still a challenge.This feature article reviews the state-of-the art research progresses that focus on the preparation and the applications in elec-tronics and optoelectronics of 2D TMDCs and their van der Waals hetero-junctions.First,the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined.Then,recent progress on the application of fabricated 2D TMDCs based materials is revealed with particular attention to electronic(eg,field effect transistors and logic circuits)and optoelectronic(eg,photodetectors,photovoltaics,and light emitting diodes)devices.Finally,the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

Two-dimensional alloyed transition metal dichalcogenide nanosheets:Synthesis and applications

Two-dimensional(2D)transition metal dichalcogenide(TMD)nanosheets have attracted considerable attention owing to their diverse properties and great potential in a wide range of applications.In order to further tune their properties and then broaden their application domain,large efforts have been devoted into engineering the structures of 2D TMD nanosheets at atomic scale,especially the alloying technology.Alloying different 2D TMD nanosheets into 2D alloys not only offers the opportunities to fine-tune their physical/chemical properties,but also opens up some unique properties,which are highly desirable for wide applications including electronics,optoelectronics and catalysis.This review summarizes the recent progress in the preparation,characterization and applications of 2D alloyed TMD nanosheets.