Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure

Research on two-dimensional(2D) materials and related van der Waals heterostructures(vdWHs) is intense and remains one of the leading topics in condensed matter physics.Lattice vibrations or phonons of a vdWH provide rich information,such as lattice structure,phonon dispersion,electronic band structure and electron–phonon coupling.Here,we provide a mini review on the lattice vibrations in vdWHs probed by Raman spectroscopy.First,we introduced different kinds of vdWHs,including their structures,properties and potential applications.Second,we discussed interlayer and intralayer phonon in twist multilayer graphene and MoS2.The frequencies of interlayer and intralayer modes can be reproduced by linear chain model(LCM)and phonon folding induced by periodical moiré potentials,respectively.Then,we extended LCM to vdWHs formed by distinct 2D materials,such as MoS2/graphene and hBN/WS2 heterostructures.We further demonstrated how to calculate Raman intensity of interlayer modes in vdWHs by interlayer polarizability model.

A facile and efficient dry transfer technique for two-dimensional Van der Waals heterostructure

Two-dimensional （2D） Van der Waals heterostructures have aroused extensive concerns in recent years. Their fabrica- tion calls for facile and efficient transfer techniques for achieving well-defined structures. In this work, we report a simple and effective dry transfer method to fabricate 2D heterostructures with a clean interface. Using Propylene Carbonate （PC） films as stamps, we are able to pick up various 2D materials flakes from the substrates and unload them to the receiving substrates at an elevated temperature. Various multilayer heterostructures with ultra-clean interfaces were fabricated by this technique. Furthermore, the 2D materials can be pre-pattemed before transfer so as to fabricate desired device structures, demonstrating a facile way to promote the development of 2D heterostructures.

Magnetic two-dimensional van derWaals materials for spintronic devices

Magnetic two-dimensional(2D)van derWaals(vdWs)materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin,charge,and energy valley,which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future.This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress.Next,the proximity-effect,current-induced magnetization switching,and the related spintronic devices(such as magnetic tunnel junctions and spin valves)based on magnetic 2D vdWs materials are presented.Finally,the development trend of magnetic 2D vdWs materials is discussed.This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.

Raman scattering study of two-dimensional magnetic van der Waals compound VI3

The layered magnetic van der Waals materials have generated tremendous interest due to their potential applications and importance in fundamental research.Previous x-ray diffraction(XRD)studies on the magnetic van der Waals compound VI3,revealed a structural transition above the magnetic transition but output controversial analysis on symmetry.In this paper we carried out polarized Raman scattering measurements on VI3 from 10 K to 300 K,with focus on the two Ag phonon modes at^71.1 cm^-1 and 128.4 cm-1.Our careful symmetry analysis based on the angle-dependent spectra demonstrates that the crystal symmetry can be well described by C2h rather than D3d both above and below structural phase transition.We further performed temperature-dependent Raman experiments to study the magnetism in VI3.Fano asymmetry and anomalous linewidth drop of two Ag phonon modes at low temperatures,point to a significant spin-phonon coupling.This is also supported by the softening of 71.1-cm^-1 mode above the magnetic transition.The study provides the fundamental information on lattice dynamics and clarifies the symmetry in VI3.And spin-phonon coupling existing in a wide temperature range revealed here may be meaningful in applications.

Crystallographic and magnetic properties of van der Waals layered FePS_3 crystal

The crystallographic and magnetic properties are presented for van der Waals antiferromagnetic FePS_3. High-quality single crystals of millimeter size have been successfully synthesized through the chemical vapor transport method. The layered structure and cleavability of the compound are apparent, which are beneficial for a potential exploration of the interesting low dimensional magnetism, as well as for incorporation of FePS_3 into van der Waals heterostructures. For the sake of completeness, we have measured both direct current(dc) and alternating current(ac) magnetic susceptibility.The paramagnetic to antiferromagnetic transition occurs at approximately T_N 115 K. The effective moment is larger than the spin-only effective moment, suggesting that an orbital contribution to the total angular momentum of the Fe^(2+) could be present. The ac susceptibility is independent of frequency, which means that the spin freezing effect is excluded.Strong anisotropy of out-of-plane and in-plane susceptibility has been shown, demonstrating the Ising-type magnetic order in FePS_3 system.

Flexible electronics and optoelectronics of 2D van der Waals materials

Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.

Strain drived band aligment transition of the ferromagnetic VS_(2)/C_(3)N van der Waals heterostructure

Exploring two-dimensional(2D)magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_(2)/C_(3)N van der Waals(vdW)heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS2 and C3N monolayers,our results indicate that a direct band gap with type-Ⅱband alignment and p-doping characters are realized in the spin-up channel of the VS_(2)/C_(3)N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱand type-Ⅲband alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.

Observation of magnetoresistance in CrI_(3)/graphene van der Waals heterostructures

Two-dimensional ferromagnetic van der Waals(2D vdW)heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials,and for manipulating spin degree of freedom at the limit of few atomic layers,which empower next-generation spintronic and memory devices.However,to date,the electronic properties of 2D ferromagnetic heterostructures still remain elusive.Here,we report an unambiguous magnetoresistance behavior in CrI_(3)/graphene heterostructures,with a maximum magnetoresistance ratio of 2.8%.The magnetoresistance increases with increasing magnetic field,which leads to decreasing carrier densities through Lorentz force,and decreases with the increase of the bias voltage.This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.

Spin orbit torques in Pt-based heterostructures with van der Waals interface

Spin orbit torques(SOTs)in ferromagnet/heavy-metal heterostructures have provided great opportunities for efficient manipulation of spintronic devices.However,deterministically field-free switching of perpendicular magnetization with SOTs is forbidden because of the global two-fold rotational symmetry in conventional heavy-metal such as Pt.Here,we engineer the interface of Pt/Ni heterostructures by inserting a monolayer MoTe_(2)with low crystal symmetry.It is demonstrated that the spin orbit efficiency,as well as the out-of-plane magnetic anisotropy and the Gilbert damping of Ni are enhanced,due to the effect of orbital hybridization and the increased spin scatting at the interface induced by MoTe_(2).Particularly,an out-of-plane damping-like torque is observed when the current is applied perpendicular to the mirror plane of the MoTe_(2)crystal,which is attributed to the interfacial inversion symmetry breaking of the system.Our work provides an effective route for engineering the SOT in Pt-based heterostructures,and offers potential opportunities for van der Waals interfaces in spintronic devices.

Two-Dimensional van der Waals Superconductor Heterostructures:Josephson Junctions and Beyond

The past few years have witnessed prominent progress in two-dimensional(2D)van der Waals heterostructures.Vertically assembled in an artificial manner,these atomically thin layers possess distinctive electronic,magnetic,and other properties,which have provided a versatile platform for both fundamental exploration and practical applications in condensed matter physics and materials science.Within various potential combinations,a particular set of van der Waals superconductor(SC)heterostructures,which is realized by stacking fabrication based on two-dimensional SCs,is currently attracting intense attention.For example,the Josephson junction,a specific structure in which a nonsuperconducting barrier is inserted between two proximity-coupled SCs,shows phenomena and outstanding properties with atomic-scale thickness.In this Perspective,we first review this emerging research area of van der Waals SC heterostructures,especially progress on the 2D van der Waals Josephson junctions,from the aspects of preparation,performance,and application,and also propose our vision for the future direction and potential innovation opportunities.

Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells

Perovskite solar cells(PSCs)offer low costs and high power conversion efficiency.However,the lack of long-term stability,primarily stemming from the interfacial defects and the sus-ceptible metal electrodes,hinders their practical application.In the past few years,two-dimensional(2D)materials(e.g.,graphene and its derivatives,transitional metal dichalcogenides,MXenes,and black phosphorus)have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces,layer-dependent electronic band structures,tunable functional groups,and inherent compactness.Here,recent progress of 2D material toward efficient and stable PSCs is summarized,including its role as both interface materials and electrodes.We discuss their beneficial effects on perovskite growth,energy level alignment,defect passivation,as well as blocking external stimulus.In particular,the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized.Finally,perspectives on the further development of PSCs using 2D materials are provided,such as designing high-quality van der Waals heterojunction,enhancing the uniformity and coverage of 2D nanosheets,and developing new 2D materials-based electrodes.

Centered Waves for the Two-dimensional Pseudo-Steady van der Waals Gas Satisfied Maxwell's Law Around a Sharp Corner

In this paper,the authors study the centered waves for the two-dimensional(2D for short)pseudo-steady supersonic flow with van der Waals gas satisfied Maxwell's law around a sharp corner.In view of the initial value of the specific volume and the properties of van der Waals gas,the centered waves at the sharp corner are constructed by classification.It is shown that the supersonic incoming flow turns the sharp corner by a centered simple wave or a centered simple wave with right-contact discontinuity or a composite wave(jump-fan,fan-jump or fan-jump-fan),or a combination of waves and constant state.Moreover,the critical angle of the sharp corner corresponding to the appearance of the vacuum phenomenon is obtained.

Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy

Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics.

Van der Waals magnets: Wonder building blocks for two-dimensional spintronics?

The unprecedented realization of two-dimensional(2D)van der Waals magnets excitingly extends the synergy between spintronics and 2D materials,started with graphene over the last decade.This article reviews the recent milestones in the development of 2D magnets and its derived heterostructures.In particular,a number of critical challenges centered around the scalability,ambient stability and Curie temperature of these atomically thin magnets are discussed.This mini-review also provides an outlook on what the future might hold for this integrated field of 2D spintronics,and assesses its potential in postsilicon electronics.

Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors

Van der Waals （vdW） heterojunctions based on two-dimensional （2D） atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized with layered molecular crystals using a two-step physical vapor transport （PVT） process. Both types of heterojunctions show clean and sharp interfaces without phase mixing under atomic force microscopy （AFM）. They also exhibit a strong interfacial built-in electric field similar to that of their inorganic counterparts. These heterojunctions have greater potential for device applications than individual materials. The lateral heterojunction （LHJ） devices show rectifying characteristics due to the asymmetric energy barrier for holes at the interface, while the vertical heterojunction （VHJ） devices behave like metal-insulator-semiconductor tunnel junctions, with pronounced negative differential conductance （NDC）. Our work extends the concept of vdW heterojunctions to molecular materials, which can be generalized to other layered organic semiconductors （OSCs） to obtain new device functionalities.

Two-dimensional van der Waals thin film transistors as active matrix for spatially resolved pressure sensing

The development of pressure sensor arrays capable of distinguishing the shape and texture details of objects is of considerable interest in the emerging fields of smart robots,prostheses,human-machine interfaces,and artificial intelligence(AI).Here we report an integrated pressure sensor array,by combining solution-processed two-dimensional(2D)MoS2 van der Waals(vdW)thin film transistor(TFT)active matrix and conductive micropyramidal pressure-sensitive rubber(PSR)electrodes made of polydimethylsiloxane/carbon nanotube composites,to achieve spatially revolved pressure mapping with excellent contrast and low power consumption.We demonstrate a 10×10 active matrix by using the 2D MoS2 vdW-TFTs with high on-off ratio>10^(6),minimal hysteresis,and excellent device-to-device uniformity.The combination of the vdW-TFT active matrix with the highly uniform micropyramidal PSR electrodes creates an integrated pressure sensing array for spatially resolved pressure mapping.This study demonstrates that the solution-processed 2D vdW-TFTs offer a solution for active-matrix control of pressure sensor arrays,and could be extended for other active-matrix arrays of electronic or optoelectronic devices.

Phonon anharmonicity and thermal conductivity of two-dimensional van der Waals materials: A review

Two-dimensional(2D) van der Waals(vdW) materials have extraordinary thermal properties due to the effect of quantum confinement, making them promising for thermoelectric energy conversion and thermal management in microelectronic devices.In this review, the mechanism of phonon anharmonicity originating from three-and four-phonon interactions is derived. The phonon anharmonicity of 2D vdW materials, involving the Grüneisen parameter, phonon lifetime, and thermal conductivity, is summarized and derived in detail. The size-dependent thermal conductivity of representative 2D vdW materials is discussed experimentally and theoretically. This review will present fundamental and advanced knowledge on how to evaluate the phonon anharmonicity in 2D vdW materials, which will aid the design of new structures and materials for applications related to energy transfer and conversion.

Two-dimensional capillaries assembled by van der Waals heterostructures

Research on two-dimensional materials in the past decades has brought many insights of low-dimensional science on a wide range of related topics.As a novel two-dimensional structure,the atomic-scale capillaries which can conceptually be seen as the empty space left by removing few layers of two-dimensional materials from their bulk van der Waals crystals offer a unique platform of investigating physical and chemical processes of ions,molecules,and atoms under two-dimensional confinements.Investigation of many important problems,such as capillary condensation and water network structure that are difficult to be explored experimentally in other confinement structures,has now been accessible;two-dimensional migration of ions,water,and gases shows abnormal transport properties beyond conventional theory prediction;influence of quantum effect to molecule permeation is observable even at room temperature.All these discoveries greatly extend our fundamental understandings of nano-science,and stimulate the development of potential applications.We review the fabrication of these two-dimensional capillaries which are created by the assembly of van der Waals heterostructures,and discuss the ultimate steric effects in the smallest possible confinements.Exotic interactions between capillary interior and confined particles are also summarized.When coupled with external stimuli,these channels exhibit tunable mass transport behaviors,which not only gives feedback to the mechanism understanding but in turn guides the channel structure optimization.

Epitaxy of Ⅲ-nitrides on two-dimensional materials and its applications

Ⅲ-nitride semiconductor materials have excellent optoelectronic properties,mechanical properties,and chemical stability,which have important applications in the field of optoelectronics and microelectronics.Two-dimensional(2D)materials have been widely focused in recent years due to their peculiar properties.With the property of weak bonding between layers of 2D materials,the growth ofⅢ-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality,low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices.In this progress report,the main methods for the preparation of 2D materials,and the recent progress and applications of different techniques for the growth ofⅢ-nitrides based on 2D materials are reviewed.