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The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process
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作者 王庆 王永富 +1 位作者 巴德纯 岳向吉 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第3期235-239,共5页
The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density a... The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate. 展开更多
关键词 magnetron sputtering target ion current probe ion current density ETCHING
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Preparation of PZT Thin Films by Magnetron Sputtering With Metal and Metal Oxide Composite Target
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作者 Zhou Zhengguo Tang Xianmin +1 位作者 Li Jiangpeng Zhang Yu (Department of Physics, Wuhan University,Wuhan 430072,China) 《Wuhan University Journal of Natural Sciences》 CAS 1996年第1期49-52,共4页
This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical propert... This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical properties of PZT thin films have also been studied. 展开更多
关键词 composite target PZT thin film magnetron sputtering
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Fabrication and Characterization of VO_2 Thin Films by Direct Current Facing Targets Magnetron Sputtering and Low Temperature Oxidation
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作者 梁继然 胡明 +2 位作者 刘志刚 韩雷 陈涛 《Transactions of Tianjin University》 EI CAS 2008年第3期173-177,共5页
Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing... Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process. 展开更多
关键词 vanadium dioxide direct current facing targets magnetron sputtering low temperature oxidation: microstructure
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Effect of process parameters on electrical,optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering
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作者 Do-Hoon SHIN Yun-Hae KIM +2 位作者 Joong-Won HAN Kyung-Man MOON Ri-Ichi MURAKAMI 《中国有色金属学会会刊:英文版》 EI CSCD 2009年第4期997-1000,共4页
IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99... IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm. 展开更多
关键词 溅射薄膜 工艺参数 光学性能 磁控 直流 类型 薄膜厚度 电力
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A SMALL UNBALANCED MAGNETRON SPUTTERING SOURCE WITH MULTIPOLE MAGNETIC FIELD ANODE
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作者 郑思孝 孙官清 廖小东 《Nuclear Science and Techniques》 SCIE CAS CSCD 1994年第2期113-115,共3页
A small unbalanced maglletron atom source with multipole cusp magnetic field anode is described. The co-axial magnetron principle is extended to the circularplanar magnetron atom source, which raises the efficiency of... A small unbalanced maglletron atom source with multipole cusp magnetic field anode is described. The co-axial magnetron principle is extended to the circularplanar magnetron atom source, which raises the efficiency of sputtering target areaup to 60%. The multipole magnetic field is put in the anode, which makes theunbalanced magnetron atomsource run in a higher discharge current at a lower arcvoltage condition. Meanwhile, the sputtering atoms through out the anode can beionized partially, because the electron reaching the anode have to suffer multiplecollisions in order to advallce across the multipole magnetic field lines in the anode,which enhances the chemical reactivity of the secting atoms in film growth andimprove the property of film depositing. 展开更多
关键词 magnetron sputtering source Multipole field anode Aluminium target
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Targeted Deposition in a Lithiophilic Silver-Modified 3D Cu Host for Lithium-Metal Anodes 被引量:2
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作者 Weiyi Chen Shaopeng Li +2 位作者 Chenhui Wang Hui Dou Xiaogang Zhang 《Energy & Environmental Materials》 SCIE EI CAS CSCD 2023年第5期355-363,共9页
Lithium-metal batteries are regarded as the"Holy Grail"of next-generation batteries.However,lithium dendrite and anode volume expansion in cycles seriously hinders lithium-metal battery applications.Herein,w... Lithium-metal batteries are regarded as the"Holy Grail"of next-generation batteries.However,lithium dendrite and anode volume expansion in cycles seriously hinders lithium-metal battery applications.Herein,we propose a precise and efficient strategy for stabilizing lithium-metal batteries via a lithiophilic Ag-modified Cu current host(Li@CuM/Ag).By applying the magnetron sputtering method,the lithiophilic silver layer can be anchored homogeneously on the Cu mesh.The lithiophilic silver layer effectively guides uniform Li deposition in the 3D host and realizes spatial control over Li nucleation.In addition,a dendrite-free lithium anode is successfully realized,which has been proven by in situ optical dynamic tests and Li deposition simulations.The symmetrical cell can maintain a low overpotential(230 mV)and long cycle life(90 h)at a large current of 10 mA cm^(-2)for a plating amount of 3 mAh cm^(-2).Furthermore,Li@CuM/Ag||LiCoO2 cells exhibited a high-capacity retention rate(86.39%)after 150 cycles at 2 C.Lithiophilic hosts based on magnetron sputtering provide a feasible strategy for applications of lithium-metal batteries. 展开更多
关键词 lithiophilic modification lithium-metal battery lithium-metal host magnetron sputtering targeted deposition
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Deposition of Phase-pure Cr2AlC Coating by DC Magnetron Sputtering and Post Annealing Using Cr-Al-C Targets with Controlled Elemental Composition but Different Phase Compositions 被引量:4
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作者 Yueming Li Guorui Zhao +2 位作者 Yuhai Qian Jingjun xu Meishuan Li 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第3期466-471,共6页
Polycrystalline Cr2AlC coatings were prepared on M38G superalloy using a two-step method consisting of magnetron sputtering from Cr-Al-C composite targets at room temperature and subsequent annealing at 620 ℃. Partic... Polycrystalline Cr2AlC coatings were prepared on M38G superalloy using a two-step method consisting of magnetron sputtering from Cr-Al-C composite targets at room temperature and subsequent annealing at 620 ℃. Particularly, various targets synthesized by hot pressing mixture of Cr, Al, and C powders at 650-1000 ℃ were used. It was found that regardless of the phase compositions and density of the com- posite targets, when the molar ratio of Cr:Al:C in the starting materials was 2:1:1, phase-pure crystalline Cr2AlC coatings were prepared by magnetron sputtering and post crystallization. The Cr2AIC coatings were dense and crack-free and had a duplex structure. The adhesion strength of the coating deposited on M38G superalloy from the 800 ℃ hot-pressed target and then annealed at 620 ℃ for 20 h in Ar exceeded 82 ± 6 MPa, while its hardness was 12 ± 3 GPa. 展开更多
关键词 Cr2AlC Coating magnetron sputtering Composite target Heat treatment
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Simulation of plasma properties in magnetron sputtering for two kinds of cathode targets 被引量:1
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作者 Di-zhou Guo Shuang-kai Chen Yong-sheng Ma 《Radiation Detection Technology and Methods》 CSCD 2020年第1期10-16,共7页
Introduction During magnetron sputtering process,the common structure of cathode target is planar target and cylindrical rotating target.In this study,cylindrical rotating target is used and two kinds of cathode targe... Introduction During magnetron sputtering process,the common structure of cathode target is planar target and cylindrical rotating target.In this study,cylindrical rotating target is used and two kinds of cathode targets were investigated by COMSOL Multiphysics software(The official network of COMSOL Multiphysics software.https://uk.comsol.com/).We will elucidate the difference between the two types of cathode target and determine the type of cathode target used in the final experiment.The system configuration We explore the plasma distribution in the radio frequency cavity,so the simulation process was divided into two steps:building RF cavity model and setting up plasma discharge parameters.The main part of the model included the radio frequency cavity substrate(divided into two tube parts and middle ellipsoid part),the cathode and the magnet.And the plasma discharge parameters are as follows:Ar gas was used with 1.5 Pa;magnetic field strength of iron core was set to 1000 Gs;the applied voltage of cathode was set to-160 V;and anode was set to 0 V.Conclusion For the long cathode target and the short cathode target,the main difference is the electric field distribution.Because the electric field lines are denser for the long cathode target,the electric field intensity is stronger,and then the initial energy obtained by electrons is higher.During the plasma discharge process,because of the high electron energy,the plasma density produced is more than the simulation of the short cathode target.And under the same simulation time,the residual energy of electrons is more for the long cathode target,which is the reason for the higher electron temperature.From the previous experimental experience,we know that the film quality formed by higher electron energy is better.The simulation in this work shows that the electron energy corresponding to the long cathode target is higher than that of the short cathode target,so we choose the long cathode target as the experimental target in the subsequent coating experiments. 展开更多
关键词 magnetron sputter COMSOL Multiphysics Plasma properties Plasma simulation Cathode targets
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深振荡磁控溅射放电等离子体脉冲特性
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作者 高剑英 李玉阁 雷明凯 《物理学报》 SCIE EI CAS CSCD 北大核心 2024年第16期162-170,共9页
深振荡脉冲磁控溅射(deep oscillation magnetron sputtering,DOMS)以一系列微脉冲振荡波形的形式向靶提供能量,提供高密度等离子体的同时能够实现完全消除电弧放电和提高靶材原子离化率,实现高质量薄膜的沉积制备.针对DOMS微脉冲放电... 深振荡脉冲磁控溅射(deep oscillation magnetron sputtering,DOMS)以一系列微脉冲振荡波形的形式向靶提供能量,提供高密度等离子体的同时能够实现完全消除电弧放电和提高靶材原子离化率,实现高质量薄膜的沉积制备.针对DOMS微脉冲放电形式拓宽放电参数空间,提高工艺灵活性的特点,建立脉冲等离子体整体模型,测量充电电压DCint=300-380 V和微脉冲开启时间τon=2-6μs的Cr靶放电电压电流,将电压电流波形作为模型输入条件,获得DOMS放电等离子体参数随时间变化规律.充电电压300 V,等离子体峰值密度由τon=2μs的1.34×10^(18) m^(-3)增至τon=3μs的2.64×10^(18) m^(-3),τon由3μs增至6μs时,等离子体峰值密度基本不变.靶材离化率随τon变化趋呈现相近趋势,由τon=2μs的12%增至τon=3μs的20%,τon进一步增至6μs,离化率基本保持不变.固定τon=6μs,DCint由300 V升高至380 V,等离子体峰值密度由2.67×10^(18) m^(-3)增至3.90×10^(18) m^(-3),金属离化率由21%增至28%.DOMS放电具有高功率脉冲磁控溅射典型的金属自溅射现象,峰值自溅射参数Πpeak随功率密度线性增大,表明峰值功率密度是调控DOMS放电中金属自溅射的主要参数.Πpeak最高达到0.20,金属自溅射程度远高于常规脉冲直流磁控溅射,等离子体密度和沉积通量中金属离化率提高,原子沉积带来的阴影效应减轻,是DOMS沉积薄膜质量提高的原因. 展开更多
关键词 深振荡磁控溅射 磁控等离子体 整体模型 CR 金属自溅射
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磁控溅射玫瑰金靶材的刻蚀行为
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作者 袁军平 陈令霞 +4 位作者 潘成强 黄宇亨 周翔 林善伟 朱佳宜 《电镀与涂饰》 CAS 北大核心 2024年第6期85-92,共8页
[目的]磁控溅射玫瑰金膜层相比于电镀工艺具有突出的环保优势,但很少有关于磁控溅射靶材刻蚀行为的研究报道。[方法]以Au85玫瑰金制作平面溅射靶材,进行真空磁控溅射镀膜。研究了靶电流、功率密度、磁场布置等对靶材表面刻蚀行为的影响... [目的]磁控溅射玫瑰金膜层相比于电镀工艺具有突出的环保优势,但很少有关于磁控溅射靶材刻蚀行为的研究报道。[方法]以Au85玫瑰金制作平面溅射靶材,进行真空磁控溅射镀膜。研究了靶电流、功率密度、磁场布置等对靶材表面刻蚀行为的影响。[结果]靶电流和功率密度较低时辉光稳定,溅射过程平稳;靶材粒子会优先沿着某个晶面逐层溅射出来,形成阶梯状直线条纹;靶材表面形成V形刻蚀沟槽,刻蚀区斜坡与靶面法向夹角为75°~76°。随着靶电流和功率密度的增大,溅射过程偶有弧光放电现象发生,刻蚀区表面形成乳突状显微形貌;靶电流过高时,靶材在短时间内就会出现熔穿。靶座的磁场布置存在端部效应,使刻蚀槽的深度和宽度存在不均匀的现象。[结论]为提高贵金属平面靶的利用率,应改善磁场布置,并将功率密度控制在出现弧光放电的阈值内。 展开更多
关键词 磁控溅射 玫瑰金 靶材 刻蚀 微观形貌
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直流磁控溅射系统研究及其维护
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作者 吴海 张文朋 +1 位作者 王露寒 程壹涛 《电子工业专用设备》 2024年第1期24-29,共6页
通过介绍磁控溅射镀膜系统的原理,分析了磁控溅射系统在溅射镀膜的过程中遇到的沉积速率、沉积均匀性、常见故障等方面的问题,对沉积速率和沉积均匀性的影响因素进行了具体地研究;同时描述了设备在使用过程中经常遇到的一些故障,对这些... 通过介绍磁控溅射镀膜系统的原理,分析了磁控溅射系统在溅射镀膜的过程中遇到的沉积速率、沉积均匀性、常见故障等方面的问题,对沉积速率和沉积均匀性的影响因素进行了具体地研究;同时描述了设备在使用过程中经常遇到的一些故障,对这些故障发生的原因进行了详细地分析,根据原因分析给出了故障的具体解决方法;最后,对磁控溅射系统在日常使用过程中的保养和维护方面提出了一些建议。注重日常的保养和维护可大大降低设备的故障率。 展开更多
关键词 磁控溅射 沉积速率 沉积均匀性 设备维护
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液态靶材磁控溅射技术研究进展
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作者 王浪平 孙田玮 《真空与低温》 2024年第5期496-503,共8页
随着先进制造业的迅猛发展,对高性能涂层的需求日益增长。以经济高效的方式沉积高性能涂层成为了科学界研究的热点。液态靶材磁控溅射技术因兼备磁控溅射与蒸镀的优点,受到了研究者的广泛关注。从液态靶材磁控溅射技术的基本原理出发,... 随着先进制造业的迅猛发展,对高性能涂层的需求日益增长。以经济高效的方式沉积高性能涂层成为了科学界研究的热点。液态靶材磁控溅射技术因兼备磁控溅射与蒸镀的优点,受到了研究者的广泛关注。从液态靶材磁控溅射技术的基本原理出发,深入分析了放电过程中的特点与等离子体特性,总结了其特点与优势以及在涂层沉积领域的具体应用,最后指出了该技术当前存在的不足之处,并对其未来的发展趋势进行了展望。 展开更多
关键词 磁控溅射 液态靶材 薄膜制备 等离子体特性 放电特性 蒸发 高沉积速率
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磁控溅射制备锌镍合金薄膜的结构及耐蚀性能研究
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作者 袁景追 喻岚 +3 位作者 杨旭江 刘晓红 李红轩 吉利 《材料保护》 CAS CSCD 2024年第11期10-17,共8页
为提高飞机结构件的耐蚀性能,采用闭合场非平衡磁控溅射技术在18Cr3Ni结构钢表面制备了锌镍合金薄膜,考察了锌靶和镍靶电流对薄膜表面形貌、微观结构和耐蚀性能的影响。分别采用扫描电镜(SEM)、X射线衍射仪(XRD)和纳米压痕仪对薄膜的微... 为提高飞机结构件的耐蚀性能,采用闭合场非平衡磁控溅射技术在18Cr3Ni结构钢表面制备了锌镍合金薄膜,考察了锌靶和镍靶电流对薄膜表面形貌、微观结构和耐蚀性能的影响。分别采用扫描电镜(SEM)、X射线衍射仪(XRD)和纳米压痕仪对薄膜的微观形貌、晶相结构和力学性能进行了分析。对薄膜的电化学特性和耐中性盐雾腐蚀性能进行了研究,并对腐蚀产物进行了分析。结果表明:采用闭合场非平衡磁控溅射技术制备的锌镍合金薄膜具有致密的结构,薄膜中的镍起到了细化晶粒的作用,但随着镍含量的增加,薄膜的耐蚀性能下降。镍含量为7.63%(原子分数,下同)的锌镍合金薄膜具有最好的耐蚀性能,但其力学性能较差;镍含量为12.88%的锌镍合金薄膜具有良好的耐蚀性能和力学性能。薄膜经过中性盐雾试验后的腐蚀产物Zn_(5)(OH)_(8)Cl_(2)·H_(2)O起到了钝化作用,阻止了薄膜和基底被进一步腐蚀。采用磁控溅射制备的锌镍合金薄膜可用于精密结构件表面的腐蚀防护。 展开更多
关键词 锌镍合金薄膜 靶电流 耐蚀性能 镍含量 磁控溅射
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同位靶磁控溅射法制备Al掺杂CdSe薄膜
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作者 何惠江 宣乐 +2 位作者 毛高翔 刘辉 王春海 《热加工工艺》 北大核心 2024年第16期159-162,共4页
为增加掺杂薄膜的元素均匀性,基于磁控溅射技术,设计了靶材同位共溅射制备掺杂薄膜的方法,并用于制备Al掺杂CdSe薄膜,获得了Al均匀掺杂的CdSe薄膜。结果表明:制备的薄膜为富Se状态,呈现明显的(111)择优取向。Al掺杂后的CdSe薄膜方块电阻... 为增加掺杂薄膜的元素均匀性,基于磁控溅射技术,设计了靶材同位共溅射制备掺杂薄膜的方法,并用于制备Al掺杂CdSe薄膜,获得了Al均匀掺杂的CdSe薄膜。结果表明:制备的薄膜为富Se状态,呈现明显的(111)择优取向。Al掺杂后的CdSe薄膜方块电阻由5.2 kΩ/□升高至544.5 kΩ/□。随着Al掺杂量的增加,薄膜的方块电阻下降。当共溅射Al片为6片时,薄膜方块电阻为7.7 kΩ/□,薄膜半导体类型由p型转变为n型。掺杂薄膜体电导率分别为192.4(未掺杂)、2.01×10^(4)(Al片数1)、506.9(Al片数2)、384.8(Al片数4)、284.9 mΩ·cm(Al片数6)。掺杂薄膜样品的禁带宽度Eg分别为1.82(未掺杂)、1.97(Al片数1)、1.75(Al片数2)、1.78(Al片数4)、1.82 eV(Al片数6)。 展开更多
关键词 同位靶磁控溅射 Al掺杂CdSe薄膜 电学行为
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基于磁控溅射系统的大尺寸Ga_(2)O_(3)薄膜沉积模型与性能研究
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作者 肖厚恩 王顺利 《浙江理工大学学报(自然科学版)》 2024年第3期310-318,共9页
薄膜型Ga_(2)O_(3)光电探测器具有成本低廉、性能优异、可重复性高等优点,实现Ga_(2)O_(3)薄膜大尺寸均匀生长对批量制备薄膜型Ga_(2)O_(3)光电探测器具有重要意义。为了实现大尺寸Ga_(2)O_(3)薄膜的高效生长,采用Matlab软件对磁控溅射... 薄膜型Ga_(2)O_(3)光电探测器具有成本低廉、性能优异、可重复性高等优点,实现Ga_(2)O_(3)薄膜大尺寸均匀生长对批量制备薄膜型Ga_(2)O_(3)光电探测器具有重要意义。为了实现大尺寸Ga_(2)O_(3)薄膜的高效生长,采用Matlab软件对磁控溅射系统中倾斜圆形平面靶与旋转水平工作台上Ga_(2)O_(3)薄膜沉积模型进行了仿真,分析了靶基距和溅射靶转动角度对薄膜性能的影响,并进行了实验验证。结果表明:靶基距的增加会提高沉积薄膜的均匀性,在一定的靶基距下溅射靶转动角度的增加会使薄膜均匀性先提高后降低,Ga_(2)O_(3)薄膜均匀性实验分析结果与仿真结果基本一致;在靶基距为100 mm、溅射靶转动角度为35°的条件下,在蓝宝石衬底上沉积得到了平均厚度偏差为1.27%的Ga_(2)O_(3)薄膜;以沉积的薄膜批量制备Ga_(2)O_(3)光电探测器,得到的光电探测器对254 nm的光源具有基本一致的光响应。该研究为大批量制备高质量Ga_(2)O_(3)薄膜探测器提供了一定的理论依据。 展开更多
关键词 Ga_(2)O_(3) 磁控溅射 大尺寸 倾斜圆型平面靶 MATLAB
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Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters 被引量:2
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作者 Fa-Yu Wu Jian-Wei Li +3 位作者 Yi Qi Wu-Tong Ding Yuan-Yuan Guo Yan-Wen Zhou 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2016年第9期827-833,共7页
Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron ... Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV-Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target-substrate separation. The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO3 films was in the range of 10^-3-10^-4 Ω cm. The structural, optical, and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed. 展开更多
关键词 ZnSnO3 film Powder target magnetron sputtering Optical property Electrical property
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夹层式WO_(3)-NiO电致变色玻璃:从材料到器件的体系化研究
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作者 杨晔 谢紫凌 +3 位作者 程奕 户其钊 金琼雅 袁晨 《中国表面工程》 EI CAS CSCD 北大核心 2024年第4期117-133,共17页
基于WO_(3)-NiO体系的电致变色(EC)玻璃具有优异的可见与红外的主动调控特性和节能效果,在建筑、新能源汽车等产业的应用得到越来越多的关注。生产效率与制造成本等因素的限制,使得大面积WO_(3)-NiO电致变色玻璃未规模化地投入市场。相... 基于WO_(3)-NiO体系的电致变色(EC)玻璃具有优异的可见与红外的主动调控特性和节能效果,在建筑、新能源汽车等产业的应用得到越来越多的关注。生产效率与制造成本等因素的限制,使得大面积WO_(3)-NiO电致变色玻璃未规模化地投入市场。相比于在单一玻璃表面采用膜层堆栈方式制备多层膜结构的电致变色器件,以高性能锂离子胶膜为中间层,将磁控溅射沉积的Glass/TCO/WO_(3)以及Glass/TCO/NiO通过层压的方式组装成夹层式器件是一种可行地实现电致变色玻璃大面积、低成本规模化生产的技术手段,正逐渐成为器件制备技术的主流。然而,面向于大面积夹层式WO_(3)-NiO电致变色玻璃的低成本制造和新的应用需求,仍有必要开展从材料到器件的体系化研究。在材料端,开发兼容现有镀膜产线的高质量EC氧化物陶瓷靶材制备技术,高性能WO、NiO薄膜成分、结构、性能与色彩的调控技术,具备高离子电导率、高粘结强度、高热稳定、高透明且易于实现大面积规模化生产的锂离子胶膜材料及其制备技术等。在器件端,开发与现有玻璃产业兼容的大尺寸器件的层压工艺,弧型器件的制备技术,具备更高效节能且能呈现中性着褪色的器件技术等。针对上述挑战,综述了国内外相关研究团队在上述领域的研究进展,结果表明,可以制备出满足高性能电致变色薄膜沉积的EC氧化物陶瓷靶材,通过调节磁控溅射工艺参数可以有效实现对薄膜成份、结构以及性能调控,开发出满足层压工艺的、具有高离子电导率(1.51×10^(-4)S·cm^(-1))的固态聚合物电解质,最终利用商用高压釜实现30 cm×30 cm WO_(3)-NiO电致变色器件高质量制备。 展开更多
关键词 电致变色器件 玻璃 靶材 磁控溅射 薄膜
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紧凑型氘氘中子发生器中钛自成靶实验研究
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作者 冯子楠 徐伟 +8 位作者 李旭 吴亮亮 孟献才 王纪超 钱玉忠 王维海 耿成龙 梁立振 胡纯栋 《真空科学与技术学报》 CAS CSCD 北大核心 2024年第10期922-928,共7页
靶作为氘氘中子发生器关键部件之一,其性能直接影响了中子发生器的中子产额及其稳定运行。文章从钛自成靶的设计、制备、表征及测试四个方面系统的介绍了中子发生器中靶的关键技术实验研究。首先,为满足靶的温度控制需求,采用无氧铜作... 靶作为氘氘中子发生器关键部件之一,其性能直接影响了中子发生器的中子产额及其稳定运行。文章从钛自成靶的设计、制备、表征及测试四个方面系统的介绍了中子发生器中靶的关键技术实验研究。首先,为满足靶的温度控制需求,采用无氧铜作为靶基底材料,并在其内部开设套环式主动水冷回路。通过ANSYS热工模拟靶在加速器运行时的表面温升情况,并利用电子枪轰击测试靶表面实际温度变化情况。模拟和测试结果表明,在中子发生器运行期间,靶表面温度可以有效控制在200℃以内。随后,利用直流磁控溅射技术在无氧铜靶衬底表面制备微米级高纯靶膜。并且,利用扫描电子显微镜、能谱仪、X射线衍射仪和划痕仪研究了靶膜表面的微观结构、成分及膜基结合力。结果表明利用磁控溅射制备的钛膜表面十分均匀紧凑,以六方晶系结构的α-Ti沉积在靶衬底表面,钛膜与基底的膜基结合力为0.22 N。最后,在感应耦合型中子发生器中子产额达到了1.25×10^(8)n/s,电子回旋共振中子发生器中子产额达到了1.75×10^(8)n/s,都实现了稳定运行5 h。 展开更多
关键词 中子发生器 自成靶 磁控溅射 钛膜
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磁控溅射源中氩辉光放电的等离子体行为及分布特性
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作者 李平川 张帆 +2 位作者 张正浩 李箫波 唐德礼 《真空科学与技术学报》 CAS CSCD 北大核心 2024年第6期521-528,共8页
通过三维粒子数值模型对现有磁控溅射源结构中氩辉光放电的等离子体行为和分布特征进行了模拟,从而得到靶材利用率和能量利用率的信息。离子轨迹、离子能量和离子入射角分布的分析结果表明,由于电势的空间分布影响,放电电压从260 V增加... 通过三维粒子数值模型对现有磁控溅射源结构中氩辉光放电的等离子体行为和分布特征进行了模拟,从而得到靶材利用率和能量利用率的信息。离子轨迹、离子能量和离子入射角分布的分析结果表明,由于电势的空间分布影响,放电电压从260 V增加到340 V,使得轰击离子比例从80%降低到67%。由于离子向靶材移动和远离靶材都会得到加速,过高的放电电压不利于提高能量利用率。另一方面,提高放电电压有利于离子以更高的平均动能撞击靶材,有利于提高溅射产额。因此,根据工作压力选择合适的放电电压是提高电源效率的有效途径。通过离子溅射位置分布与靶材实际侵蚀剖面图的对比,验证了仿真模型的可靠性,对磁控溅射源的优化设计具有一定的参考价值。 展开更多
关键词 磁控溅射 数值仿真 等离子体行为 靶材利用率 能量利用率
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磁控溅射镀膜技术在(Cr,Ti,Al)N涂层上的应用
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作者 赵凡 项燕雄 +2 位作者 邹长伟 于云江 梁枫 《真空》 CAS 2024年第4期22-29,共8页
过渡金属氮化物硬质涂层在切削刀具、精密模具和机械零部件等领域有着广泛的应用。随着切削技术的进步和难加工材料的增多,硬质涂层已由传统的二元涂层向着三元、四元涂层不断发展。(Cr,Ti,Al)N四元涂层因其优异的综合性能而备受研究人... 过渡金属氮化物硬质涂层在切削刀具、精密模具和机械零部件等领域有着广泛的应用。随着切削技术的进步和难加工材料的增多,硬质涂层已由传统的二元涂层向着三元、四元涂层不断发展。(Cr,Ti,Al)N四元涂层因其优异的综合性能而备受研究人员的关注。本文从磁控溅射镀膜的基本原理和技术特点出发,介绍了制备(Cr,Ti,Al)N涂层常见的磁控溅射镀膜技术,分析了采用单质靶与合金靶沉积镀膜的效果及其各自的优缺点,研究了磁控溅射工艺参数对(Cr,Ti,Al)N涂层机械性能的影响,最后讨论了(Cr,Ti,Al)N梯度涂层的作用及其制备方法。本文可为设计(Cr,Ti,Al)N涂层制备工艺、改善(Cr,Ti,Al)N涂层性能提供理论参考与指导。 展开更多
关键词 (Cr Ti Al)N涂层 磁控溅射 靶材选择 工艺参数 梯度涂层
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