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Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process
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作者 李海霞 李占奎 +3 位作者 王方聪 王柱生 王秀华 李春艳 《Chinese Physics C》 SCIE CAS CSCD 2011年第7期635-637,共3页
The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process fo... The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. 展开更多
关键词 nuclear radiation detector two-step annealing reverse body resistance
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