With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of dat...With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
研究了电感电流检测电阻对电流模式控制开关变换器稳定性的改善作用。以I2控制Buck变换器为例,建立了含有输出电容等效串联电阻ESR(equivalent series resistance)的二阶离散迭代映射模型。在此基础上,通过分析输出电容时间常数和电感...研究了电感电流检测电阻对电流模式控制开关变换器稳定性的改善作用。以I2控制Buck变换器为例,建立了含有输出电容等效串联电阻ESR(equivalent series resistance)的二阶离散迭代映射模型。在此基础上,通过分析输出电容时间常数和电感电流检测电阻变化时的分岔图、特征根轨迹、最大Lyapunov指数、稳定边界,深入研究了电感电流检测电阻对变换器动力学特征的影响。研究结果表明,增大电感电流检测电阻,可以使变换器在较小输出电容时间常数时稳定工作,拓宽稳定工作范围。最后,通过仿真和实验,验证了理论分析的正确性。研究结果可以推广到其他开关变换器,对开关变换器的设计和优化具有指导意义。展开更多
Lead halide perovskites have attracted increasing attention in photovoltaic devices,light-emitting diodes,photodetectors,and other fields due to their excellent properties.Besides optoelectronic devices,growing number...Lead halide perovskites have attracted increasing attention in photovoltaic devices,light-emitting diodes,photodetectors,and other fields due to their excellent properties.Besides optoelectronic devices,growing numbers of studies have focused on the perovskite-based electrical devices in the past few years,such as transistors and resistive random access memories(RRAMs).Here,this article summarizes the recent progress the researchers have made of RRAM devices.Primarily,the working mechanism and the key parameters of RRAM are introduced.Generally,the working principles,including the conductive filament model(containing the types of the model of the metal cationsinduced filament and the model of the ions migration in bulk),the interface effect,and the electronic effect are the origins of the RRAM behaviors,and hence,various factors that affect the device performance are explored.Then,RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures,different compositions,and different fabrication methods.Finally,a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs.展开更多
Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast op...Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.60921062)
文摘With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
文摘研究了电感电流检测电阻对电流模式控制开关变换器稳定性的改善作用。以I2控制Buck变换器为例,建立了含有输出电容等效串联电阻ESR(equivalent series resistance)的二阶离散迭代映射模型。在此基础上,通过分析输出电容时间常数和电感电流检测电阻变化时的分岔图、特征根轨迹、最大Lyapunov指数、稳定边界,深入研究了电感电流检测电阻对变换器动力学特征的影响。研究结果表明,增大电感电流检测电阻,可以使变换器在较小输出电容时间常数时稳定工作,拓宽稳定工作范围。最后,通过仿真和实验,验证了理论分析的正确性。研究结果可以推广到其他开关变换器,对开关变换器的设计和优化具有指导意义。
基金National Natural Science Foundation of China(61704131)National Key Research and Development Program of China(grant 2018YFB2202900)+1 种基金Key Research and Development Program of Shaanxi Province(grant 2020GY-310)Fundamental Research Funds for the Central Universities.
文摘Lead halide perovskites have attracted increasing attention in photovoltaic devices,light-emitting diodes,photodetectors,and other fields due to their excellent properties.Besides optoelectronic devices,growing numbers of studies have focused on the perovskite-based electrical devices in the past few years,such as transistors and resistive random access memories(RRAMs).Here,this article summarizes the recent progress the researchers have made of RRAM devices.Primarily,the working mechanism and the key parameters of RRAM are introduced.Generally,the working principles,including the conductive filament model(containing the types of the model of the metal cationsinduced filament and the model of the ions migration in bulk),the interface effect,and the electronic effect are the origins of the RRAM behaviors,and hence,various factors that affect the device performance are explored.Then,RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures,different compositions,and different fabrication methods.Finally,a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs.
基金supported by the National Natural Science Foundation of China(61322408,61221004,61334007,61274091,61106119 and 61106082)National Basic Research Program of China(2010CB934200 and 2011CBA00602)National High Technology Research and Development Program of China(2011AA010401 and 2011AA010402)
文摘Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.
