The characteristics of a low-voltage triggering silicon-controlled rectifier （LVTSCR） under a transmission line pulse （TLP） and the characteristics of high frequency are analyzed. The research results show that th...The characteristics of a low-voltage triggering silicon-controlled rectifier （LVTSCR） under a transmission line pulse （TLP） and the characteristics of high frequency are analyzed. The research results show that the anode series resistance has a significant effect on the key points of the snapback curve. The device characteristics can fit the requirements of a electrostatic discharge （ESD） design window by adjusting the anode series resistance. Furthermore, the set-up time of the ESD has an influence on the turn-on voltage of the LVTSCR. A steep rising edge will cause the turn-on voltage to increase. The parasitic capacitance of the device for different voltage biases and frequencies determines the capacitive impedance, and its accuracy calculation is very important to the ESD design of high frequency circuits. Our research results provide a theoretical basis for the design of an ultra-deep sub-micron （UDSM） LVTSCR structure under ESD stress and the improvement of TLP test technology.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083).
文摘The characteristics of a low-voltage triggering silicon-controlled rectifier （LVTSCR） under a transmission line pulse （TLP） and the characteristics of high frequency are analyzed. The research results show that the anode series resistance has a significant effect on the key points of the snapback curve. The device characteristics can fit the requirements of a electrostatic discharge （ESD） design window by adjusting the anode series resistance. Furthermore, the set-up time of the ESD has an influence on the turn-on voltage of the LVTSCR. A steep rising edge will cause the turn-on voltage to increase. The parasitic capacitance of the device for different voltage biases and frequencies determines the capacitive impedance, and its accuracy calculation is very important to the ESD design of high frequency circuits. Our research results provide a theoretical basis for the design of an ultra-deep sub-micron （UDSM） LVTSCR structure under ESD stress and the improvement of TLP test technology.
