High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achiev...High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.展开更多
Ultra-high purity Yb_(2)O_(3) is the critical material of many high-tech materials such as laser glass and fiber,in which impurities seriously affect the laser color quality,intensity and power.In order to reduce the ...Ultra-high purity Yb_(2)O_(3) is the critical material of many high-tech materials such as laser glass and fiber,in which impurities seriously affect the laser color quality,intensity and power.In order to reduce the influence of impurities on the properties of laser materials,the purification process of Yb_(2)O_(3) was studied by comparing two kinds of resins(RT-1 and RS-1)using improved ion-exchange chromatography(IEC)method.In this study,through the synergistic improvement of resin structure and eluting system,the environmental pollution caused by ammonia water in the traditional IEC method was reduced,and the requirements of high temperature and pressure were cut.The ion exchange behavior and impurity removal mechanism in the resin column during the loading and eluting process were compared and analyzed.The experimental results show that RS-1 resin is all superior to RT-1resin in elements selectivity,ion exchange capacity and impurities removal rate.After separation and purification by IEC with RS-1 resin,the total removal rate of rare earth impurities was 77.59%and that of non-rare earth impurities was 95.86%when Yb recovery was more than 70%,both higher than that of RT-1 resin(73.26%and 83.18%).This indicates that the improved IEC method is very effective in separating and removing different metal impurities from Yb_(2)O_(3).The pilot test results of IEC method separating and purifying Yb_(2)O_(3) with RS-1 resin show that the purity of Yb_(2)O_(3) can be increased from 99.9929%to 99.9997%by IEC method.It has exhibited huge potential of preparing ultra-high purity Yb_(2)O_(3),especially the deep removal of non-rare earth impurities.展开更多
基金supported by the National Natural Science Foundation of China(No.12005017).
文摘High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.
基金financially supported by the National Key R&D Program of China(No.2020YFC1909004)China Postdoctoral Science Foundation(Nos.2020M680615 and 2021T140581)the Youth Fund Project of GRINM。
文摘Ultra-high purity Yb_(2)O_(3) is the critical material of many high-tech materials such as laser glass and fiber,in which impurities seriously affect the laser color quality,intensity and power.In order to reduce the influence of impurities on the properties of laser materials,the purification process of Yb_(2)O_(3) was studied by comparing two kinds of resins(RT-1 and RS-1)using improved ion-exchange chromatography(IEC)method.In this study,through the synergistic improvement of resin structure and eluting system,the environmental pollution caused by ammonia water in the traditional IEC method was reduced,and the requirements of high temperature and pressure were cut.The ion exchange behavior and impurity removal mechanism in the resin column during the loading and eluting process were compared and analyzed.The experimental results show that RS-1 resin is all superior to RT-1resin in elements selectivity,ion exchange capacity and impurities removal rate.After separation and purification by IEC with RS-1 resin,the total removal rate of rare earth impurities was 77.59%and that of non-rare earth impurities was 95.86%when Yb recovery was more than 70%,both higher than that of RT-1 resin(73.26%and 83.18%).This indicates that the improved IEC method is very effective in separating and removing different metal impurities from Yb_(2)O_(3).The pilot test results of IEC method separating and purifying Yb_(2)O_(3) with RS-1 resin show that the purity of Yb_(2)O_(3) can be increased from 99.9929%to 99.9997%by IEC method.It has exhibited huge potential of preparing ultra-high purity Yb_(2)O_(3),especially the deep removal of non-rare earth impurities.
