This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(S...This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.展开更多
Amplified spontaneous emission （ASE）, including intensity and bandwidth, in a typical example of BuEH-PPV is calculated. For this purpose, the intensity rate equation is used to explain the reported experimental mea...Amplified spontaneous emission （ASE）, including intensity and bandwidth, in a typical example of BuEH-PPV is calculated. For this purpose, the intensity rate equation is used to explain the reported experimental measurements of a BuEH-PPV sample pumped at different pump intensities from Ip = 0.61 MW/cm2 to 5.2 MW/cm2. Both homogeneously and inhomogeneously broadened transition lines along with a model based on the geometrically dependent gain coefficient （GDGC） are examined and it is confirmed that for the reported measurements the homogeneously broadened line is responsible for the light-matter interaction. The calculation explains the frequency spectrum of the ASE output intensity extracted from the sample at different pump intensities, unsaturated and saturated gain coefficients, and ASE bandwidth reduction along the propagation direction. Both analytical and numerical calculations for verifying the GDGC model are presented in this paper. Although the introduced model has shown its potential for explaining the ASE behavior in a specific sample it can be universally used for the ASE study in different active media.展开更多
This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect i...This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.展开更多
Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very l...Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.展开更多
A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composi...A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.展开更多
A novel frequency compensation technique for three-stage amplifier with dual complex pole-zero (DCP) cancellation is proposed. It uses one pair of complex zeros to cancel one pair of complex poles, resulting in featur...A novel frequency compensation technique for three-stage amplifier with dual complex pole-zero (DCP) cancellation is proposed. It uses one pair of complex zeros to cancel one pair of complex poles, resulting in feature that frequency response of the three-stage amplifier exhibits that of a single-pole system. Thus the gain-bandwidth (GBW) is expected to be increased several times compared to the conventional nested miller compensation (NMC) approach. Moreover, this technique requires only one very small compensation capacitor even when driving a big load capacitor. A GBW 4.63 MHz, DC gain 100 dB, PM 90o and power dissipation 0.87 mW can be achieved for a load capacitor 100 pF with a single Miller compensation capacitor 2 pF at a ±1V supply in a standard 0.6-μm CMOS technology.展开更多
基金the National Key R&D Program of China(Grant No.2020YFB1805701)the National Natural Foundation of China(Grant No.61934003)。
文摘This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode(APD)by computational simulations and experimental results.The APD adopts the structure of separate absorption,charge,and multiplication(SACM)with top-illuminated.Computational simulations demonstrate how edge breakdown effect is suppressed in the guardringfree structure.The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth(GB)product.The dark current is 3 nA at 0.9Vb r,and the unit responsivity is 0.4 A/W.The maximum3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55μm.
文摘Amplified spontaneous emission （ASE）, including intensity and bandwidth, in a typical example of BuEH-PPV is calculated. For this purpose, the intensity rate equation is used to explain the reported experimental measurements of a BuEH-PPV sample pumped at different pump intensities from Ip = 0.61 MW/cm2 to 5.2 MW/cm2. Both homogeneously and inhomogeneously broadened transition lines along with a model based on the geometrically dependent gain coefficient （GDGC） are examined and it is confirmed that for the reported measurements the homogeneously broadened line is responsible for the light-matter interaction. The calculation explains the frequency spectrum of the ASE output intensity extracted from the sample at different pump intensities, unsaturated and saturated gain coefficients, and ASE bandwidth reduction along the propagation direction. Both analytical and numerical calculations for verifying the GDGC model are presented in this paper. Although the introduced model has shown its potential for explaining the ASE behavior in a specific sample it can be universally used for the ASE study in different active media.
基金Project supported by in part by the National Natural Science Foundation of China(Nos.61534005,61675195)the Beijing Science and Technology Commission(No.Z151100003315019)the Natural Science Foundation of Beijing Municipality(No.4162063)
文摘This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.
基金supported in part by the National Natural Science Foundation of China under Grant No.61274027the National Key Laboratory of Analog Integrated Circuit under Grant No.9140c90503140c09048
文摘Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.
基金Supported by the National Natural Science Foundation of China(No.61774012,61574010)。
文摘A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.
文摘A novel frequency compensation technique for three-stage amplifier with dual complex pole-zero (DCP) cancellation is proposed. It uses one pair of complex zeros to cancel one pair of complex poles, resulting in feature that frequency response of the three-stage amplifier exhibits that of a single-pole system. Thus the gain-bandwidth (GBW) is expected to be increased several times compared to the conventional nested miller compensation (NMC) approach. Moreover, this technique requires only one very small compensation capacitor even when driving a big load capacitor. A GBW 4.63 MHz, DC gain 100 dB, PM 90o and power dissipation 0.87 mW can be achieved for a load capacitor 100 pF with a single Miller compensation capacitor 2 pF at a ±1V supply in a standard 0.6-μm CMOS technology.
