Ultra-shallow Si p^(+)n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with those of secondary ion mass spectroscopy(SIMS),it is found that the...Ultra-shallow Si p^(+)n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with those of secondary ion mass spectroscopy(SIMS),it is found that the dopant concentration profiles in heavily-doped p+layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.However,the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions(USJ)formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm,and dopant concentration up to 10^(21) cm^(-3).Also,its depth resolution can be as fine as 1 nm.Therefore,it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.展开更多
We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV.The system uses the injector of a tandetron accele...We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV.The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder.Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration.Small carbon clusters C 2 and C 4 were implanted into Ni/SiO 2 /Si substrates and following post-thermal treatment graphene was obtained.Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2-3 layers of graphene.The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.展开更多
文摘Ultra-shallow Si p^(+)n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with those of secondary ion mass spectroscopy(SIMS),it is found that the dopant concentration profiles in heavily-doped p+layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.However,the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions(USJ)formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm,and dopant concentration up to 10^(21) cm^(-3).Also,its depth resolution can be as fine as 1 nm.Therefore,it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.
基金supported by the International Cooperation Program of the Ministry of Science and Technology of China (2010DFA02010)
文摘We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A at extraction voltages ranging from 6 to 20 kV.The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder.Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration.Small carbon clusters C 2 and C 4 were implanted into Ni/SiO 2 /Si substrates and following post-thermal treatment graphene was obtained.Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2-3 layers of graphene.The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.
