Ultrasonic-assisted brazing of SiC ceramics was performed by filling with an Al-12Si alloy at a low tem- perature of 620 ℃ in air. The interracial characteristics and formation mechanism were investigated. The joint ...Ultrasonic-assisted brazing of SiC ceramics was performed by filling with an Al-12Si alloy at a low tem- perature of 620 ℃ in air. The interracial characteristics and formation mechanism were investigated. The joint shear strength reached 84-94 MPa using the ultrasonic time of 2-16 s. The fracture morphology showed that the fracture path initiated and propagated in the joint alloy. The thin film of amorphous SiO2 that formed on the SiC surface was non-uniformly decomposed and diffused into the liquid Al-12Si alloy under the cavitation erosion effect of ultrasound. Abnormal isolated blocks of A12SiO5 compounds formed at the interface between Al-12Si and a thicker SiO2 layer formed during the thermal oxidation treatment of the SiC ceramic. The SiO2 layer on the SiC ceramic did not hinder or impair the wetting and bonding process, and a stronger bond could form between Al-12Si and SiO2 or SiC in ultrasonic- assisted brazing.展开更多
基金the financial support for this project from the China Postdoctoral Science Foundation (No.2015M570093)the National Natural Science Foundation of China (Nos. 51435004 and 51075104)the State Key Lab of Advanced Welding and Joining Harbin Institute of Technology (No. AWJ-M14-05)
文摘Ultrasonic-assisted brazing of SiC ceramics was performed by filling with an Al-12Si alloy at a low tem- perature of 620 ℃ in air. The interracial characteristics and formation mechanism were investigated. The joint shear strength reached 84-94 MPa using the ultrasonic time of 2-16 s. The fracture morphology showed that the fracture path initiated and propagated in the joint alloy. The thin film of amorphous SiO2 that formed on the SiC surface was non-uniformly decomposed and diffused into the liquid Al-12Si alloy under the cavitation erosion effect of ultrasound. Abnormal isolated blocks of A12SiO5 compounds formed at the interface between Al-12Si and a thicker SiO2 layer formed during the thermal oxidation treatment of the SiC ceramic. The SiO2 layer on the SiC ceramic did not hinder or impair the wetting and bonding process, and a stronger bond could form between Al-12Si and SiO2 or SiC in ultrasonic- assisted brazing.
