Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2...Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.展开更多
Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The res...Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The resulting ZnO–SnO_(2) fflms were comprehensively studied by atomic force and Kelvin probe force microscopy,X-ray diffraction,scanning electron microscopy,and high-resolution X-ray photoelectron spectroscopy spectra.The photoconductivity parameters on exposure to light with a wavelength of 470 nm were also studied.The study of the photosensitivity kinetics of ZnO–SnO_(2) fflms showed that the fflm with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant.Measurements of the activation energy of the conductivity,potential barrier,and surface potential of ZnO–SnO_(2) fflms showed that these parameters have maxima at ZnO concentrations of 0.5 mol.%and 1 mol.%.Films with 1 mol.%ZnO exhibit high response values when exposed to 5–50 ppm of nitrogen dioxide at operating temperatures of 200℃ and 250℃.展开更多
文摘Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.
基金The authors are grateful to the PHENMA 2021–2022 conference for the possibility of manuscript publication.The research was carried out at the expense of the grant of the Russian Science Foundation No.22-29-00621,(https://rscf.ru/project/22-29-00621/)at the Southern Federal University.
文摘Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The resulting ZnO–SnO_(2) fflms were comprehensively studied by atomic force and Kelvin probe force microscopy,X-ray diffraction,scanning electron microscopy,and high-resolution X-ray photoelectron spectroscopy spectra.The photoconductivity parameters on exposure to light with a wavelength of 470 nm were also studied.The study of the photosensitivity kinetics of ZnO–SnO_(2) fflms showed that the fflm with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant.Measurements of the activation energy of the conductivity,potential barrier,and surface potential of ZnO–SnO_(2) fflms showed that these parameters have maxima at ZnO concentrations of 0.5 mol.%and 1 mol.%.Films with 1 mol.%ZnO exhibit high response values when exposed to 5–50 ppm of nitrogen dioxide at operating temperatures of 200℃ and 250℃.
