Dispersion compensation for an ultrathin metal film using LCD-CCD system

A dispersion compensation method is introduced to correct the distorted image passing through an ultrathin metal film.An LCD-CCD system is modeled by the back propagation network and used to evaluate the transmittance of the ultrathin metal film.Training samples for the network come from 729 images captured by shooting test patches,in which the RGB values are uniformity distributed between 0 and 255.The RGB value of the original image that will be distorted by the dispersion is first transformed by mapping from the LCD to the CCD,multiplied by the inverse matrix of the transmittance matrix,and finally transformed by mapping from the CCD to the LCD,then the corrected image is obtained.In order to verify the effectiveness of the proposed method,ultrathin aluminum films with different thicknesses are evaporated on glass substrates and laid between the CCD and LCD.Experimental results show that the proposed method compensates for the dispersion successfully.

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

Preparation and Characterization of Polymeric PVDF/PDDA Ultrathin Films

A new method for the production of nanoscaled polymeric multilayer films of ferroelectric PVDF is presented.The ultrathin multilayer films of poly diallyldimethylammonium chloride (PDDA) and polyvinylidene fluoride (PVDF) have been prepared on fuzed quartz substrate by the layer-by-layer self-assembly (LbL-SA) method.The PDDA/PVDF multilayer films with the thickness of 30 nm to 150 nm have been characterized by quartz crystal microbalance (QCM) and infrared spectra (IR) The QCM reveals that the alternant ultrathin films of PVDF and PDDA are well order assembled.The electric property of the ultrathin PDDA/PVDF multilayer films at room temperature is investigated.Experimental results show that property of ultrathin films differed from that of the thick films.

A SIMPLE METHOD FOR THE INCORPORATION OF LOW MOLECULAR WEIGHT DYES IN ULTRATHIN FILMS

A simple method for the fabrication of ultrathin films containing low molecular weight dye material is introduced(post-adsorption technique). The chromophore used is 4-nitro-4'-decyloxy azobenzene quaternary ammonium salt (azo-10Q).In classical layer-by-layer (LBL) procedures, where the substrate is dipped alternately into the chromophore solution and thecomplementary polyelectrolyte, the chromophore tends to desorb from the film during subsequent immersion in thepolyanion solution, and there is little or no indication of multilayer growth. The extent of desorption depends somewhat onthe selection of polyelectrolyte, the ionic strength and the pH of solution. An alternative approach is to first prepareconventional LBL films from a pair of oppositely charged polyelectrolytes, and then to soak this film into the chromophoresolution, where adsorption by penetration into the LBL film may take place. In preliminary results, a linear dependence ofUV absorbance on layer number of LBL film thus prepared was found, demonstrating the apparent effectiveness of the post-adsorption technique for the preparation of azo-10Q-containing ultrathin films.

Magnetic anisotropy and magnetization reversal of ultrathin iron films with in-plane magnetization on Si（111） substrates

The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer （ML） grown on Si（111） have been investigated by ferromagnetic resonance （FMR） and vibrating sample magnetometer （VSM）. Owing to the significant modification of the energy surface in remanent state by slight misorientation from （111） plane and a uniaxial magnetic anisotropy, the azimuthal angular dependence of in-plane resonance field shows a six-fold symmetry with a weak uniaxial contribution, while the remanence of hysteresis loops displays a two-fold one. The competition between the first and second magnetoerystalline anisotropies may result in the switching of in-plane easy axis of the system. Combining the FMR and VSM measurements, the magnetization reversal mechanism has also been determined.

Surface plasmon-polaritons on ultrathin metal films

We discuss the surface plasmon-polaritons used for ultrathin metal films with the aid of linear response theory and make comparisons with the known result given by Economou E N. In this paper we consider transverse electromagnetic fields and assume that the electromagnetic field in the linear response formula is the induced field due to the current of the electrons. It satisfies the Maxwell equation and thus we replace the current （charge） term in the Maxwell equation with the linear response expectation value. Finally, taking the external field to be zero, we obtain the dispersion relation of the surface plasmons from the eigenvalue equation. In addition, the charge-density and current-density in the z direction on the surface of ultrathin metal films are also calculated. The results may be helpful to the fundamental understanding of the complex phenomenon of surface plasmon-polaritons.

Formations and morphological stabilities of ultrathin CoSi_2 films

In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.

Accurate determination of anisotropic thermal conductivity for ultrathin composite film

Highly anisotropic thermal conductive materials are of significance in thermal management applications. However,accurate determination of ultrathin composite thermal properties is a daunting task due to the tiny thermal conductance,severely hindering the further exploration of novel efficient thermal management materials, especially for size-confined environments. In this work, by utilizing a hybrid measuring method, we demonstrate an accurate determination of thermal properties for montmorillonite/reduced graphene oxide(MMT/r GO) composite film with a thickness range from 0.2 μm to2 μm. The in-plane thermal conductivity measurement is realized by one-dimensional(1D) steady-state heat conduction approach while the cross-plane one is achieved via a modified 3ω method. As-measured thermal conductivity results are cross-checked with different methods and known materials, revealing the high measurement accuracy. A high anisotropic ratio of 60.5, independent of composite thickness, is observed in our measurements, further ensuring the negligible measurement error. Notably, our work develops an effective approach to the determination of ultrathin composite thermal conductivity, which may promote the development of ultrathin composites for potential thermal-related applications.

Nanometer scale patterning of ultrathin films with a scanning tunneling microscope in ambient environment

ＮａｎｏｍｅｔｅｒｓｃａｌｅｐａｔｔｅｒｎｉｎｇｏｆｕｌｔｒａｔｈｉｎｆｉｌｍｓｗｉｔｈａｓｃａｎｎｉｎｇｔｕｎｎｅｌｉｎｇｍｉｃｒｏｓｃｏｐｅｉｎａｍｂｉｅｎｔｅｎｖｉｒｏｎｍｅｎｔＮａｎｏｍｅｔｅｒｓｃａｌｅｐａｔｔｅｒｎｉｎｇｏｆｕｌｔｒａｔｈ...

Manipulating magnetic anisotropies of Co/MgO(001) ultrathin films via oblique deposition

We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO（001） substrates by molecular beam epitaxy at different deposition angles,i.e.,0？,30？,45？,60？,and 75？with respect to the surface normal.Low energy electron diffraction（LEED）,surface magneto–optical Kerr effect（SMOKE）,and anisotropic magnetoresistance（AMR） setups were employed to investigate the magnetic properties of cobalt films.The values of in-plane uniaxial magnetic anisotropy（UMA） constant Ku and four-fold magnetocrystalline anisotropy constant K1 were derived from magnetic torque curves on the base of AMR results.It was found that the value of Ku increases with increasing deposition angle with respect to the surface normal,while the value of K_1 remains almost constant for all the samples.Furthermore,by using MOKE results,the Ku values of the films deposited obliquely were also derived from the magnetization curves along hard axis.The results of AMR method were then compared with that of hard axis fitting method（coherent rotation） and found that both methods have almost identical values of UMA constant for each sample.

Materials for Spintronics: Magnetic and Transport Properties of Ultrathin (Monolayer Graphene)/MnO(001) and MnO(001) Films

Results of investigations of band structure, Fermi surface and effective masses of charge carriers in the ultrathin (monolayer graphene)/MnO(001) and MnO(001) films are presented using the method of the density functional theory. Features of spin states of valence band and Fermi level as well as an interatomic interaction in these systems are discussed. A magnetic moment at Mn atom is estimated and an effect of spin polarization at atoms of oxygen and carbon has been revealed which natures are discussed. By calculations of structural energies for 2D (monolayer graphene)/MnO(001) and 2D MnO(001) a stability of these systems has been ascertained. In the 2D (monolayer graphene)/MnO(001) and 2D MnO(001) systems the band structure calculations for the 2D systems mentioned above point out that tensor components of effective masses of both electrons and holes are in the ranges of (0.15 - 0.54) m0 and (0.38 - 1.27) m0 respectively. Mobility estimations of two-dimensional charge carriers for a 2D (monolayer graphene)/MnO(001)AF2 heterostructure have been performed.

Size Effect of Electromagnetic Constitutive Characteristics of Ultrathin Al Films

The ultrathin aluminum films with thickness in the range of 2～60 nm have been deposited by dc magnetron sputtering apparatus. Reflectance and transmittance of the obtained samples were measured with a WFZ-900-D4 UV/VIS spectrophotometer. The optical constant (n, k) and permittivity (ε', ε') were determined by applying Newton-Simpson recurrent substitution method. The results indicate that the electromagnetic constitutive characteristic of ultrathin aluminum films is a function of thickness and has obvious size effect.

Coordination Interaction between Rare Earth and/or Transition Metal Centers and Thiophene Series Oligomer Derivatives in Ultrathin Langmuir-Blodgett Films

It has been shown by thermodynamic and electro-chemical methods that coordination interactions are involved in the process of incorporation of rare-earth elements and/or Fe into Langmuir monolayers of oligomer with alkyl fragment. A coordination mechanism, which is responsible for self-organization of octahedral Fe(II)-complexes of nano-cyclic ligands obtained from oligomer of thiophene pyrrole series derivatives in compressed Langmuir monolayers has been proposed. It has been established that a coordinational-polymeric hexagonal network of nano-cyclic ligands with metal centers is formed at the phase transition when compressing the Langmuir monolayers of thiophene pyrrole series oligomer with alkyl fragment on surface of subphase with rare-earth (Sm, Er, Ce) and/or Fe ions.

First-Principles Calculations of the Quantum Size Effects on the Stability and Reactivity of Ultrathin Ru (0001) Films

We carry out first-principles calculations of Ru（0001） films up to 30 monolayers （MLs） to study the quantum size effect （Q, SE） of Ru films for two cases： the freestanding Ru films and Ru films on Pt（111） substrates. Our studies show that the properties of these films （surface energy, work-function, charge density decay length in a vacuum and chemical reactivity） exhibit pronounced oscillatory behavior as a function of the film thickness, with an oscillation period of about four MLs for both cases due to the relationship of the match between the Fermi wave vector and the film thickness. Due to the localization of d-electron of Ru films, these quantum oscillations almost disappear when the thickness of the film is more than -20 ML for the free standing Ru films, while for the Ru films on Pt substrates the oscillations disappear quickly when the thickness of the film is beyond -13 ML. Our results reveal that the stability and reactivity of the Ru films could be tailored through Q, SE and the Ru bilayer grown on Pt substrates observed in the experiment is also related to the effect.

Observation of Tunneling Gap in Epitaxial Ultrathin Films of Pyrite-Type Copper Disulfide

We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide.Layer-by-layer growth of CuS_（2 ）films with a preferential orientation of（111）on SrTiO_3（001）and Bi_2Sr_2Ca Cu_2O_（8＋）substrates is achieved by molecular beam epitaxy growth.For ultrathin films on both kinds of substrates,we observe symmetric tunneling gap around the Fermi level that persists up to^15 K.The tunneling gap degrades with either increasing temperature or increasing thickness,suggesting new matter states at the extreme twodimensional limit.

基于金属-介质-金属的可调谐窄带完美吸收的研究

为了实现窄带完美吸收,本文提出了一种简单的三层金-二氧化硅-金薄膜(MDM)结构。通过电磁波时域差分算法(FDTD)进行模拟仿真和理论计算,详细分析了该结构的可调谐吸收特性,同时建立了理论模型,分析了其中存在的电磁模式以及窄带完美吸收的物理机制。首先,利用电磁波时域差分算法和传输矩阵算法(TMM)对该结构进行了理论计算,详细地分析了各个结构参数对吸收光谱的影响。然后,对该结构形成的窄带完美吸收物理机制进行了分析讨论。最后,利用磁控溅射制备手段,成功制备了三层结构的样片。实验观测到的结果与理论仿真一致。实验结果表明:本文提出的窄带完美吸收结构,最窄带宽约为21 nm,最高吸收可达99.51%,基本实现了窄带完美吸收。本文研究成果为相关应用奠定了基础。

Highly crystalline,highly stable n-type ultrathin crystalline films enabled by solution blending strategy toward organic single-crystal electronics

The development of n-type semiconductor is still far behind that of p-type semiconductor on account of the challenges in enhancing carrier mobility and environmental stability.Herein,by blending with the polymers,n-type ultrathin crystalline thin film was successfully prepared by the method of meniscus-guided coating.Remarkably,the n-type crystalline films exhibit ultrathin thickness as low as 5 nm and excellent mobility of 1.58 cm^(2) V^(-1) s^(-1),which is outstanding in currently reported organic n-type transistors.Moreover,the PS layer provides a high-quality interface with ultralow defect which has strong resistance to external interference with excellent long-term stability,paving the way for the application of n-type transistors in logic circuits.

Surface-induced Microstructure and Performance Changes in P3HT Ultrathin Films

In this work,poly(3-hexylthiophene)(P3HT)ultrathin films(P3HT-T)were prepared by spin-coating a dilute P3HT solution(in a toluene:o-dichlorobenzene(Tol:ODCB)blend with a volume ratio of 80:20)with ultrasonication and the addition of the nucleating agent bicycle[2.2.1]heptane-2,3-dicarboxylic acid disodium salt(HPN-68L)on glass,Si wafers and indium tin oxide(ITO)substrates.The electrical and mechanical properties of the P3HT-T ultrathin films were investigated,and it was found that the conductivity and crack onset strain(COS)were simultaneously improved in comparison with those of the corresponding pristine P3HT film(P3HT-0,without ultrasonication and nucleating agent)on the same substrate,regardless of what substrate was used.Moreover,the conductivity of P3HT-T ultrathin films on different substrates was similar(varying from 3.7 S·cm^(-1)to 4.4 S·cm^(-1)),yet the COS increased from 97%to 138%by varying the substrate from a Si wafer to ITO.Combining grazing-incidence wide-angle X-ray diffraction(GIXRD),UV-visible(UV-Vis)spectroscopy and atomic force microscopy(AFM),we found that the solid order and crystallinity of the P3HT-T ultrathin film on the Si wafer are highest,followed by those on glass,and much lower on ITO.Finally,the surface energy and roughness of three substrates were investigated,and it was found that the polar component of the surface energyγp plays a critical role in determining the crystalline microstructures of P3HT ultrathin films on different substrates.Our work indicates that the P3HT ultrathin film can obviously improve the stretchability and simultaneously retain similar electrical performance when a suitable substrate is chosen.These findings offer a new direction for research on stretchable CP ultrathin films to facilitate future practical applications.