Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method (LTLM) and the circular tra...Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method (LTLM) and the circular transmission line method (CTLM) ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm) multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet (UV) photodetectors were prepared. The dark current-voltage (I-V) characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.展开更多
基金the Pre-Research Foundation from the National Ministries and Commissions(Nos.51323040118,513080302)~~
文摘Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method (LTLM) and the circular transmission line method (CTLM) ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm) multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet (UV) photodetectors were prepared. The dark current-voltage (I-V) characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.