面向EUV光源的实验流体力学研究进展

EUV(极紫外)光源是EUV光刻机的核心部件,其原理是基于纳秒脉冲激光轰击锡液滴靶产生的等离子体辐射发光.EUV光源本质是一种流体光源,涉及丰富而复杂的流体力学基本问题,跨越从皮秒到毫秒的四个特征时间尺度.本文综述了面向EUV光源的实验流体力学研究进展.首先根据靶的类型,分别介绍了射流、液滴和液膜靶的生成与调控基本原理和技术路线.之后对三种靶与激光相互作用过程的特征时刻与典型现象进行了梳理,重点放在各个特征时间尺度内激光轰击液滴靶的研究进展,总结了不同参数激光脉冲轰击后靶的推进、变形和破碎规律.最后对EUV光源中值得重点关注的实验流体力学关键问题进行了总结和展望,提出改善激光等离子体EUV光源稳定性、亮度和寿命需要从以下三方面持续开展研究:高频率、小直径、长间距液滴靶串的精准生成和调控,激光辐照产生等离子体的膨胀和辐射规律,以及液滴靶变形破碎机理和碎屑抑制、收集及清洁技术.

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

Ultraviolet Photodetector based on Sr_(2)Nb_(3)O_(10) Perovskite Nanosheets

Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).

Effect of Ultraviolet Radiation on Hsp70 Protein Expression in HaCaT Cells

Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with humans to a greater or lesser extent, and can generate adverse effects such as cellular stress when interacting with intra-and extracellular biomolecules. The skin is the first organ in contact with UV radiation, and the stress it generates can be analyzed by the expression of a bioindicator of cellular damage such as Hsp70. Therefore, the objective of the project was: to determine the effect of UVA, UVB and UVC radiation on HaCaT epithelial cells, by analyzing the expression of Hsp70. Materials and methods: HaCaT cells were cultured in vitro, which were irradiated with UVA, UVB and UVC light at different doses, to subsequently determine the degree of Hsp70 expression by Immunodetection by PAGE-SDS and Western Blot. Results: Basal expression of Hsp70 was observed in no irradiated HaCaT cells. When HaCaT cells were irradiated with UVA, UVB, UVC, an increase in this Hsp70 protein was observed. With UVA, a higher degree of expression was observed at a time of 30 minutes of irradiation. With UVB the highest expression shifted to a time of 20 minutes. With UVC, overexpression was observed after 10 minutes. Conclusion: UV radiation generates cellular stress on HaCaT cells, evaluated by the stress bioindicator Hsp70. According to the wavelength of UV radiation, those that have a shorter wavelength have a greater potential for cellular damage, such as UVC.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

Ultraviolet‑Irradiated All‑Organic Nanocomposites with Polymer Dots for High‑Temperature Capacitive Energy Storage

Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have been extensively utilized to improved high-temperature capacitive performance of dielectric polymers,the presence of thermodynamically incompatible organic and inorganic components may lead to concern about the long-term stability and also complicate film processing.Herein,zero-dimensional polymer dots with high electron affinity are introduced into photoactive allyl-containing poly(aryl ether sulfone)to form the all-organic polymer composites for hightemperature capacitive energy storage.Upon ultraviolet irradiation,the crosslinked polymer composites with polymer dots are efficient in suppressing electrical conduction at high electric fields and elevated temperatures,which significantly reduces the high-field energy loss of the composites at 200℃.Accordingly,the ultraviolet-irradiated composite film exhibits a discharged energy density of 4.2 J cm^(−3)at 200℃.Along with outstanding cyclic stability of capacitive performance at 200℃,this work provides a promising class of dielectric materials for robust high-performance all-organic dielectric nanocomposites.

End-to-end computational design for an EUV solar corona multispectral imager with stray light suppression

An extreme ultraviolet solar corona multispectral imager can allow direct observation of high temperature coronal plasma,which is related to solar flares,coronal mass ejections and other significant coronal activities.This manuscript proposes a novel end-to-end computational design method for an extreme ultraviolet(EUV)solar corona multispectral imager operating at wavelengths near 100 nm,including a stray light suppression design and computational image recovery.To suppress the strong stray light from the solar disk,an outer opto-mechanical structure is designed to protect the imaging component of the system.Considering the low reflectivity(less than 70%)and strong-scattering(roughness)of existing extreme ultraviolet optical elements,the imaging component comprises only a primary mirror and a curved grating.A Lyot aperture is used to further suppress any residual stray light.Finally,a deep learning computational imaging method is used to correct the individual multi-wavelength images from the original recorded multi-slit data.In results and data,this can achieve a far-field angular resolution below 7",and spectral resolution below 0.05 nm.The field of view is±3 R_(☉)along the multi-slit moving direction,where R☉represents the radius of the solar disk.The ratio of the corona's stray light intensity to the solar center's irradiation intensity is less than 10-6 at the circle of 1.3 R_(☉).

Optimization of extreme ultraviolet vortex beam based on high harmonic generation

In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as microscopy and spectroscopy.An experimental study on the HHG driven by vortex and Gaussian beams is conducted in this work.It is found that the intensity of vortex harmonics is positively correlated with the laser energy and gas pressure.The structure and intensity distribution of the vortex harmonics exhibit significant dependence on the relative position between the gas jet and the laser focus.The ring-like structures observed in the vortex harmonics,and the interference of quantum paths provide an explanation for the distinct structural characteristics.Moreover,by adjusting the relative position between the jet and laser focus,it is possible to discern the contributions from different quantum paths.The optimization of the HH vortex field is applicable to the XUV,which opens up a new way for exploiting the potential in optical spin or manipulating electrons by using the photon with tunable orbital angular momentum.

Summary of a Life in Observational Ultraviolet/Optical Astronomy

I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse Interstellar Bands(DIBs) in Section 6;on construction of the 3.5 m telescope at Apache Point Observatory(APO)in Section 7;on work on the Sloan Digital Sky Survey(SDSS) in Section 8;on work in public education in Chicago in Section 9;and on my travels in Section 10. My main science research is of an observational nature,concerning Galactic and intergalactic interstellar gas. Highlights for me included my work on the orbiting telescope Copernicus, including the discovery of interstellar deuterium;early observations of absorption associated with fivetimes ionized oxygen;and discoveries concerning the phases of gas in the local interstellar medium, based on previously unobservable interstellar UV spectral lines. With other instruments and collaborations, I extended interstellar UV studies to the intergalactic cool gas using quasi-stellar object QSO absorption lines redshifted to the optical part of the spectrum;provided a better definition of the emission and morphological character of the source of absorption lines in QSO spectra;and pursued the identification of the unidentified DIBs. For several of these topics, extensive collaborations with many scientists were essential over many years. The conclusions developed slowly, as I moved from being a graduate student at Chicago, to a research scientist position at Princeton and then to a faculty position at Chicago. At each stage of life, I was exposed to new technologies adaptable to my science and to subsequent projects. From high school days, I encountered several management opportunities which were formative. I have been extremely fortunate both in scientific mentors I had and in experimental opportunities I encountered.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

ASML回击质疑:High-NA EUV光刻仍是未来最经济选择

ASML首席财务官Roger Dassen近日接受了荷兰当地媒体Bits&Chips的采访。在采访中,Dassen回应了分析机构Semi Analysis的质疑,表示HighNA(高数值孔径)EUV(极紫外光)光刻机仍是未来最经济的选择。Semi Analysis之前刊发文章,认为High-NA光刻技术将使用更高的曝光剂量,从而明显降低单位时间内的晶圆吞吐量。这就意味着,相较于沿用现有的0.33NA EUV光刻机并搭配多重曝光,引入High-NA在近期不会带来成本优势。

ASML回击质疑:High-NA EUV光刻仍是未来最经济选择

ASML首席财务官Roger Dassen近日接受了荷兰当地媒体Bits&Chips的采访。在采访中,Dassen回应了分析机构Semi Analysis的质疑,表示HighNA(高数值孔径)EUV(极紫外光)光刻机仍是未来最经济的选择。Semi Analysis之前刊发文章,认为High-NA光刻技术将使用更高的曝光剂量,从而明显降低单位时间内的晶圆吞吐量。这就意味着,相较于沿用现有的0.33NA EUV光刻机并搭配多重曝光,引入High-NA在近期不会带来成本优势。

太阳活动区EUV图像的生成式模型耀斑分级与预报

近年来,不断发射的空基观测台持续传送回海量日面图像及日地间气象数据,为采用人工智能技术对太阳活动进行预报预警提供了数据基础。但是,极端天气爆发少,样本量较少;中等程度爆发稍多,样本量较多;常规无爆发天气常见,样本较为集中,样本不均衡状况严重影响机器学习方法在空间天气领域的广泛应用。本文面向多源多通道多尺度日面图像信息,构建了来自SOHO和SDO的1996-2015年日面活动区图像数据集;针对数据分布的不平衡,对太阳活动区图像作耀斑分级与预报。在对比分析元学习算法的基础上,设计了结合分类头设计和卷积核初始化的生成式模型;在使网络轻量化的基础上,能够将M和X级耀斑预报的检测率指标相较于普通的深度学习模型和无监督度量式模型分别提升10%和7%。

Line identification of extreme ultraviolet (EUV) spectra from low-Z impurity ions in EAST tokamak plasmas

Extreme ultraviolet(EUV) spectra emitted from low-Z impurity ions in the wavelength range of10–500Å were observed in Experimental Advanced Superconducting Tokamak(EAST)discharges. Several spectral lines from K-and L-shell partially ionized ions were successfully observed with sufficient spectral intensities and resolutions for helium, lithium, boron, carbon,oxygen, neon, silicon and argon using two fast-time-response EUV spectrometers of which the spectral intensities are absolutely calibrated based on the intensity comparison method between visible and EUV bremsstrahlung continua. The wavelength is carefully calibrated using wellknown spectra. The lithium, boron and silicon are individually introduced for the wall coating of the EAST vacuum vessel to suppress mainly the hydrogen and oxygen influxes from the vacuum wall, while the carbon and oxygen intrinsically exist in the plasma. The helium is frequently used as the working gas as well as the deuterium. The neon and argon are also often used for the radiation cooling of edge plasma to reduce the heat flux onto the divertor plate. The measured spectra were analyzed mainly based on the database of National Institute of Standards and Technology. As a result, spectral lines of He Ⅱ, Li Ⅱ–Ⅲ, B Ⅳ–Ⅴ, C Ⅲ–Ⅵ, O Ⅲ–Ⅷ, Ne Ⅱ–Ⅹ,Si Ⅴ–Ⅻ, and Ar Ⅹ–XVI are identified in EAST plasmas of which the central electron temperature and chord-averaged electron density range in Te0=0.6–2.8 keV and ne=(0.5–6.0)×1019 m-3, respectively. The wavelengths and transitions of EUV lines identified here are summarized and listed in a table for each impurity species as the database for EUV spectroscopy using fusion plasmas.

MAPDST单体在EUV光刻胶制备过程中的应用

极紫外(EUV)光刻胶的研发作为适配未来光刻技术的发展方向,现已成为超高精度集成电路制造的最高效工艺技术。其中,(4-(甲基丙烯酰氧基)苯基)二甲基锍三氟甲磺酸盐(MAPDST)作为一种含辐射敏感锍基功能的关键单体,现已广泛应用于极紫外(EUV)光刻胶的研发生产过程中。首先,简要阐述在制约光刻胶性能提升过程中存在的分辨率(R)、线边缘粗糙度(LER)、曝光灵敏度(S)之间的平衡制约关系,即RLS平衡制约关系;随后,对MAPDST单体的优越性能以及在推动光刻胶朝着高分辨率方向发展的应用现状进行综述;最后,对EUV光刻胶材料及MAPDST单体的未来发展做出展望。

Comparative analysis of extreme ultraviolet solar radiation proxies during minimum activity levels

Four extreme ultraviolet(EUV)solar radiation proxies(Magnesium II core-to-wing ratio(MgII),Lymanαflux(Fα),10.7-cm solar radio flux(F10.7),and sunspot number(Rz))were analyzed during the last four consecutive solar activity minima to investigate how they differ during minimum periods and how well they represent solar EUV radiation.Their variability within each minimum and between minima was compared by considering monthly means.A comparison was also made of their role in filtering the effect of solar activity from the critical frequency of the ionospheric F2 layer,foF2,which at mid to low latitudes depends mainly on EUV solar radiation.The last two solar cycles showed unusually low EUV radiation levels according to the four proxies.Regarding the connection between the EUV“true”variation and that of solar proxies,according to the foF2 filtering analysis,MgII and Fαbehaved in a more stable and suitable way,whereas Rz and F10.7 could be overestimating EUV levels during the last two minima,implying they would both underestimate the inter-minima difference of EUV when compared with the first two minima.

新型举国体制的历史源流和时代特征——兼论EUV光刻机研发

新中国成立前,传统中国即存在类似于举国体制的模式;新中国成立后,我国建立起了计划经济基础上的传统举国体制;改革开放后,随着我国经济制度由计划经济向市场经济过渡,我国的举国体制也在不断变化;受外部环境变化的影响,中共十八大后,新型举国体制走向新时代前台,并成为解决“卡脖子”问题的重要路径之一。在新的历史条件下,如何健全新型举国机制,最新一代EUV光刻机双层协同研发模式的成功,能够提供有益的参考。

High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film

We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

Enhanced Extreme Ultraviolet Free Induction Decay Emission Assisted by Attosecond Pulses

We demonstrate the extreme ultraviolet free induction decay emission that can be significantly enhanced by employing isolated attosecond pulses.The near infrared pulses are applied to excite the neon atoms into Rydberg states coherently,and isolated attosecond pulses are used to manipulate populations of the Rydberg states and the subsequent free induction decay process.The time resolved experimental measurement of dependence of the resonance emission yield would help to understand the buildup dynamics of population of excited states.The enhancement assisted by attosecond pulses can serve as a mechanism to develop high-flux extreme ultraviolet light sources.

Recent developments in deep-ultraviolet sterilization of human respiratory RNA viruses

Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the developments of recent DUV sterilization research.Recent works have investigated DUV sterilization from the perspective of device improvement and principle investigation:one employed a novel epitaxial structure to optimize the performance and fabrication cost of DUV-LEDs and realized potent virus disinfection effects for various respiratory RNA viruses,and another work explained the disinfection phenomenon of SARS-CoV-2 and its variants(Delta and Omicron)in a cryogenic environment.These studies have contributed significantly to the development of DUV sterilization.