High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

UV接枝聚硅氧烷-TiO_(2)复合棉织物的制备及性能

通过紫外辐射3-(异丁烯酰氧)丙基三甲氧基硅烷对棉织物进行接枝聚合改性,然后与钛酸四丁酯共水解,形成Si—O—Ti化学键,通过化学键合的形式引入TiO_(2)层。由于Si元素位于棉织物和二氧化钛之间,阻断TiO_(2)光催化降解棉织物。化学键合TiO_(2)与棉织物的结合强度高,提高了耐久性。TiO_(2)对棉织物的整体结构未造成改变,但棉织物的抗紫外线能力显著提升,禁带宽度变小,光催化自清洁能力增强。

UV-LED表面消毒辐射场的数学模拟体系的建立及试验验证

为了实现紫外发光二极管(Ultraviolet Light-Emitting Diodes,UV-LED)表面消毒器设计的优化、高效、智能化目的,研究建立了UV-LED表面消毒辐射场的数学模型,并进行了试验验证。根据该数学模型,编写了VBA(Visual Basic for Applications)程序,对辐射场进行了模拟和分析。结果显示,辐射模型的计算值与实测值接近,试验验证了辐射模型的可行性。试验进行了应用举例,当照射距离与灯间距的比值为0.4时,选择最大发光角90°的UV-LED可使辐射场最优化;当照射距离与灯间距的比值为0.8和1.6时,对应的最优选择分别是45°和30°的UV-LED。数学模型和相关计算方法为优化设计紫外线表面消毒设施提供了模拟、优化的有效工具。

红光补充UV-A对叶用莴苣倍半萜内酯类化合物的调控效应

叶用莴苣特有的苦味来源于倍半萜内酯类化合物,主要包括山莴苣苦素和莴苣苦素等。为探究紫外光对叶用莴苣生长和倍半萜内酯类化合物的调控作用,以纯红光(180μmol·m^(-2)·s^(-1))为对照,比较了补充UV-A(30μmol·m^(-2)·s^(-1))、UV-B(10μmol·m^(-2)·s^(-1))对7个叶用莴苣品种生长及倍半萜内酯类化合物的影响;并进一步分析了红外光添加UV-A补光强度(15、30、45μmol·m^(-2)·s^(-1))及补光时长(0、1、2、3、6、9 d)对叶用莴苣倍半萜内酯类化合物含量的影响。结果表明:添加UV-A处理可显著提高绿罗的地上部鲜质量,显著降低7个叶用莴苣品种的山莴苣苦素和莴苣苦素含量,分别降低了33%~74%和29%~60%。随着UV-A补光强度的增加,叶用莴苣中倍半萜内酯类化合物含量逐渐降低,且以添加30μmol·m^(-2)·s^(-1)UV-A处理2 d后叶用莴苣中山莴苣苦素含量迅速上升,处理3 d时达到峰值,随后逐渐降低;而莴苣苦素含量在处理2 d后基本保持逐步上升的趋势,处理6~9 d时略有下降。综上所述,红光补充适量的UV-A(30μmol·m^(-2)·s^(-1)、3~6 d),可在不影响生物量的基础上显著降低叶用莴苣中倍半萜内酯类化合物含量,从而减轻苦味。

紫外发光二极管(UV-LED)技术对食品微生物灭活应用的研究进展

紫外辐照是一种非热杀菌技术,汞蒸气紫外灯是现阶段用于食品卫生处理的主要设备,但受某些因素影响,汞灯的生产使用将逐渐变少,被环保节能的紫外发光二极管(UV-LED)取代是一种不可避免的趋势。本文根据UV-LED发光原理和多波长耦合应用的特点,综述了对微生物灭活的机理、探究了影响灭活效果的因素(波长、紫外剂量和物料特性)、处理食品的灭菌效果以及对部分食品品质的影响,为UV-LED在食品领域的杀菌处理工艺和设备参数优化提供参考。

柔性透明导电膜用UV胶的配方探讨

应用于柔性透明导电膜用UV胶压印技术,对柔性透明导电膜产品性能有重要作用,特别是胶的黏度、硬度、附着力、光学性能、耐水性、伸长率等对实现高精度印刷效果、导电膜柔韧性、透光率和稳定性都有重要的意义。根据柔性透明导电膜用UV胶实用性能的要求,讨论了柔性透明导电膜用UV胶的配方成份。

UV-TiO_(2)-PS光催化降解煤化工废水中含氮有机物

比较了由紫外光(UV)、TiO_(2)、H_(2)O_(2)、过硫酸盐(PS)组合而成的5种工艺对溶液中喹啉的光催化降解效果,分析了影响UV-TiO_(2)-PS降解喹啉的主要因素和降解机理,考察了该体系对吲哚和吡啶的降解效果。实验结果表明:相同条件下,5种体系对喹啉的去除效果依次为UV-TiO_(2)-PS>UV-TiO_(2)-H_(2)O_(2)>UV-PS>UV-H_(2)O_(2)>UV-TiO_(2),氧化剂H_(2)O_(2)或PS与UV-TiO_(2)联用,能提高喹啉去除率;在喹啉溶液初始质量浓度20 mg/L、TiO_(2)加入量1.2 g/L、PS加入量0.012 mol/L、初始pH 6.5的最佳工艺条件下,光反应150 min,喹啉去除率为97.07%,光反应180 min,TOC去除率为72.32%;在UV-TiO_(2)-PS降解喹啉的最佳工艺条件下,光反应150 min,该体系对吡啶和吲哚的去除率分别为41.12%和80.13%;UV-TiO_(2)-PS氧化降解喹啉过程中,活性物种的贡献依次为SO_(4)^(-)·>O_(2)-·>·OH>h^(+)。

Review of deep ultraviolet photodetector based on gallium oxide

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.

Strain H_2-419-4 of Haematococcus pluvialis induced by ethyl methanesulphonate and ultraviolet radiation

Two strains H2-410 and H2-419 were obtained from the chemically mutated survivors of wild Haematococcus pluvialis 2 by using ethyl methanesulphonate (EMS). Strains H2-410 and H2-419 showed a fast cell growth with 13% and 20% increase in biomass compared to wild type, respectively. Then H2-419-4, a fast cell growth and high astaxanthin accumulation strain, was obtained by exposing the strain H2-419 to ultraviolet radiation (UV) further. The total biomass, the astaxanthin content per cell, astaxanthin production of H2-419-4 showed 68%, 28%, and 120% increase compared to wild H. pluvialis 2, respectively. HPLC (High Performance Liquid Chromatography) data showed also an obvious proportional variation of different carotenoid compositions in the extracts of H2-419-4 and the wild type, although no peak of carotenoids appeared or disappeared. Therefore, the main compositions in strain H2-419-4, like its wild one, were free of astaxanthin, monoester, and diester of astaxanthin. The asexual reproduction in survivors after exposed to UV was not synchronous, and different from the normal synchronous asexual reproduction as the mother cells were motile instead of non-motile. Interestingly, some survivors from UV irradiation produced many mini-spores (or gamete?), the spores moved away from the mother cell gradually 4 or 5 days later. This is quite similar to sexual reproduction described by Elliot in 1934. However, whether this was sexual reproduction remains questionable, as no mating process has been observed.

TiO_2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.

Ultraviolet ZnO Photodetectors with High Gain

Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.

A novel integrated ultraviolet photodetector based on standard CMOS process

A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.

Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector

The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100 ℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.

紫外光固化油墨(UV油墨)在包装印刷中的应用

本文主要介绍了紫外光固化油墨的特点、组成、原理及光固化油墨使用的光源。同时,简要介绍了UV光固化油墨在胶印、丝网印刷、柔板印刷、凹版印刷中的应用情况,以及在使用过程中的注意事项。

Ultraviolet metalens and metalens array of focused vortex beams

The solar-blind ultraviolet(UV)wavelength is particularly interesting within the range of 200 nm–300 nm.Here,we propose a focusing metalens,focusing vortex beam(VB)metalens and metalens array that specifically work in the UV band to focus a beam or VB.Firstly,a high numerical aperture(NA)focusing metalens working at a wavelength of 214.2 nm was designed,and the NA reached 0.83.The corresponding conversion efficiency of the unit structure reached as high as 94%,and the full width at half maximum was only 117.2 nm.Metalenses with large NA can act as optical tweezers and can be applied to trap ultracold atoms and molecules.Secondly,a focused VB metalens in the wavelength range of200 nm–300 nm was also designed,which can convert polarized light into a VB and focus the VB simultaneously.Finally,a metalens array was developed to focus VBs with different topological charges on the same focal plane.This series of UV metalenses could be widely used in UV microscopy,photolithography,photonics communication,etc.

Middle and near ultraviolet spectrograph of the Scientific Experimental system in Near SpacE(SENSE)

The Scientific Experimental system in Near SpacE(SENSE)consists of different types of instruments that will be installed on a balloon-based platform to characterize near-space environmental parameters.As one of the main scientific payloads,the middle and near ultraviolet spectrograph(MN-UVS)will provide full spectra coverage from middle ultraviolet(MUV,200−300 nm)to near ultraviolet(NUV,300−400 nm)with a spectral resolution of 2 nm.Its primary mission is to acquire data regarding the UV radiation background of the upper atmosphere.The MN-UVS is made up of six primary components:a fore-optical module,an imaging grating module,a UV intensified focal plane module,a titanium alloy frame,a spectrometer control module,and a data processing module.This paper presents in detail the engineering design of each functional unit of the MN-UVS,as well as the instrument’s radiometric calibration,wavelength calibration,impact test,and low-pressure discharge test.Furthermore,we are able to report ground test and flight test results of high quality,showing that the MN-UVS has a promising future in upcoming near-space applications.

Flow Injection Analysis of Hydrazine in the Aqueous Streams of Purex Process by Liquid Chromatography System Coupled with UV-Visible Detector

Present study describes the development of a rapid, sensitive and selective flow injection analysis of hydrazine in the aqueous streams of purex process by liquid chromatography system coupled with UV-Visible detector. The method is based on the formation of yellow coloured azine complex by reaction of hydrazine with para-dimethy laminobenzaldehyde (pDMAB). The formed yellow coloured complex is stable in acidic medium and has a maximum absorption at 460 nm. The presence of uranium in hydrazine solution is not interfering in the analysis. Under optimum condition, the absorption intensity linearly increased with the concentration of hydrazine in the range from 0.05-10 mg?L–1 with a correlation coefficient of R2=0.9999 (n=7). The experimental detection limit is 0.05mgL–1. The sampling frequency is 15 samples h–1 and the relative standard deviation was 2.1% for 0.05 mg?L–1. This method is suitable for automatic and continuous analysis and successfully applied to determine the concentration of hydrazine in the aqueous stream of nuclear fuel reprocessing.