A novel lumped electro-absorption modulator with a charge layer and an undercut ridge waveguide （DU-EAM） was fabricated and measured.Also,two other kinds of EAM with straight ridge waveguides,one with a charge layer...A novel lumped electro-absorption modulator with a charge layer and an undercut ridge waveguide （DU-EAM） was fabricated and measured.Also,two other kinds of EAM with straight ridge waveguides,one with a charge layer（D-EAM） and another with no charge layer（N-EAM）,were fabricated and tested to ensure that the design of the DU-EAM would reduce the RC-time constant.The measured capacitance of the D-EAM and the DU-EAM is lower than that of the N-EAM under reverse bias voltage from -1 to -8 V due to the inserted charge layer.The capacitances of the N-EAM,the D-EAM and the DU-EAM are 0.375,0.225 and 0.325 pF,respectively, at -3 V.In addition,the DU-EAM had a larger extinction ratio（25 dB at -3 V） and higher modulation efficiency （13 dB/V between -1 and -2 V） than two other straight-ridge-waveguide ones（the D-EAM performed 22 dB and 10 dB/V,the N-EAM performed 20 dB and 10 dB/V） due to the 5.2μm wider active region.展开更多
基金Project supported by the State Key Development Program for Basic Research of China(No.201 1CB301702)
文摘A novel lumped electro-absorption modulator with a charge layer and an undercut ridge waveguide （DU-EAM） was fabricated and measured.Also,two other kinds of EAM with straight ridge waveguides,one with a charge layer（D-EAM） and another with no charge layer（N-EAM）,were fabricated and tested to ensure that the design of the DU-EAM would reduce the RC-time constant.The measured capacitance of the D-EAM and the DU-EAM is lower than that of the N-EAM under reverse bias voltage from -1 to -8 V due to the inserted charge layer.The capacitances of the N-EAM,the D-EAM and the DU-EAM are 0.375,0.225 and 0.325 pF,respectively, at -3 V.In addition,the DU-EAM had a larger extinction ratio（25 dB at -3 V） and higher modulation efficiency （13 dB/V between -1 and -2 V） than two other straight-ridge-waveguide ones（the D-EAM performed 22 dB and 10 dB/V,the N-EAM performed 20 dB and 10 dB/V） due to the 5.2μm wider active region.
