In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that...In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that for the Ta/HfO/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfOlayer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfOdevice.展开更多
The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching...The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.展开更多
在一个大型的网络信息应用系统中,存在着各种各样的资源和应用.不同的用户对于不同的资源,访问权限是不一样的,目前,对于这个问题的解决,主要是通过不同的访问控制机制来实现的,从而导致了管理、应用复杂,且成本高.针对这一问题,提出了...在一个大型的网络信息应用系统中,存在着各种各样的资源和应用.不同的用户对于不同的资源,访问权限是不一样的,目前,对于这个问题的解决,主要是通过不同的访问控制机制来实现的,从而导致了管理、应用复杂,且成本高.针对这一问题,提出了基于LDAP和R ad ius的统一资源访问控制机制,可以对不同的资源、不同的应用及使用者进行统一的管理.同时作者结合实际开发,提出了一个基于开放源代码系统的、可行的、稳定的认证平台及其所涉及的相关技术及方案,具有很强的实践性.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274113,11204212,61404091,51502203,and 51502204)the Tianjin Natural Science Foundation,China(Grant Nos.14JCZDJC31500 and 14JCQNJC00800)the Tianjin Science and Technology Developmental Funds of Universities and Colleges,China(Grant No.20130701)
文摘In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that for the Ta/HfO/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfOlayer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfOdevice.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017yfb0405600)the National Natural Science Foundation of China(Grant Nos.61404091,61274113,61505144,51502203,and 51502204)the Natural Science Foundation of Tianjin City(Grant Nos.17JCYBJC16100 and 17JCZDJC31700)
文摘The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.
文摘在一个大型的网络信息应用系统中,存在着各种各样的资源和应用.不同的用户对于不同的资源,访问权限是不一样的,目前,对于这个问题的解决,主要是通过不同的访问控制机制来实现的,从而导致了管理、应用复杂,且成本高.针对这一问题,提出了基于LDAP和R ad ius的统一资源访问控制机制,可以对不同的资源、不同的应用及使用者进行统一的管理.同时作者结合实际开发,提出了一个基于开放源代码系统的、可行的、稳定的认证平台及其所涉及的相关技术及方案,具有很强的实践性.
