We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions...We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.展开更多
In previous research much effort has been devoted to the geometry of woven fabrics and relat-ed problems under the assumption of constant yarn configuration in fabric.This paper will first re-port that image crimp (ya...In previous research much effort has been devoted to the geometry of woven fabrics and relat-ed problems under the assumption of constant yarn configuration in fabric.This paper will first re-port that image crimp (yarn crimp measured by an image analysis method) seems larger than actualvalue.From the explanation of this result,the variation of yarn configuration in woven fabric dueto the non-uniform flattening is revealed.The significance of this actual structure of woven fabricsis discussed.It is believed that the variation of yarn configuration is very important for fabric per-formance,and may be an advantage for fabric quality.展开更多
基金Supported by the Scientific Equipment Research Program of Chinese Academy of Sciences under Grant No 2014Y4201449
文摘We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
文摘In previous research much effort has been devoted to the geometry of woven fabrics and relat-ed problems under the assumption of constant yarn configuration in fabric.This paper will first re-port that image crimp (yarn crimp measured by an image analysis method) seems larger than actualvalue.From the explanation of this result,the variation of yarn configuration in woven fabric dueto the non-uniform flattening is revealed.The significance of this actual structure of woven fabricsis discussed.It is believed that the variation of yarn configuration is very important for fabric per-formance,and may be an advantage for fabric quality.
